IP Library › Granted Patent US 9,634,279
Granted Patent B2
US 9,634,279 · App. 14/924,054 · Granted Apr 25, 2017

Light-emitting element

Inventors: Satoshi Seo (Sagamihara, JP); Satoko Shitagaki (Isehara, JP); Nobuharu Ohsawa (Zama, JP); Hideko Inoue (Atsugi, JP); Kunihiko Suzuki (Isehara, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5028C07D409/10C09K11/06H01L51/0072H01L51/0074H01L51/5016H05B33/14C09K2211/1007C09K2211/1011C09K2211/1029C09K2211/1044C09K2211/1088C09K2211/1092C09K2211/185H01L51/006H01L51/0056H01L51/0058H01L51/0059H01L51/0061H01L51/0085
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Quick Facts
Patent No.
US 9,634,279
App. No.
14/924,054
Granted
Apr 25, 2017
Kind
B2
Abstract

A light-emitting element having high external quantum efficiency is provided. A light-emitting element having low drive voltage is provided. Provided is a light-emitting element which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes. A combination of the first organic compound and the second organic compound forms an exciplex (excited complex). An emission spectrum of the exciplex overlaps with an absorption band located on the longest wavelength side of an absorption spectrum of the phosphorescent compound. A peak wavelength of the emission spectrum of the exciplex is longer than or equal to a peak wavelength of the absorption band located on the longest wavelength side of the absorption spectrum of the phosphorescent compound.

Claims (30)

1. A light-emitting element comprising:

a light-emitting layer comprising a phosphorescent compound and a first compound;

wherein the first compound is capable of forming an exciplex, and

wherein an emission peak wavelength of the exciplex is longer than or equal to a peak wavelength of an absorption of a triplet metal to ligand charge transfer transition of the phosphorescent compound.

2. The light-emitting element according to claim 1 , wherein excitation energy of the exciplex is transferred to the phosphorescent compound so that the phosphorescent compound emits phosphorescence.

3. The light-emitting element according to claim 1 , wherein a difference between the emission peak wavelength of the exciplex and the peak wavelength of the absorption of the triplet metal to ligand charge transfer transition of the phosphorescent compound is 30 nm or less.

4. The light-emitting element according to claim 1 , wherein the exciplex is formed from a singlet exciton of the first compound.

5. The light-emitting element according to claim 1 ,

wherein the light-emitting layer further comprises a second compound, and

wherein the first compound and the second compound are configured to form the exciplex.

6. The light-emitting element according to claim 5 , wherein the exciplex is formed from an anion of the first compound and a cation of the second compound.

7. The light-emitting element according to claim 5 , wherein at least one of the first compound and the second compound is a fluorescent compound.

8. The light-emitting element according to claim 1 , wherein the phosphorescent compound is an organometallic complex.

9. An electronic device comprising a light-emitting device comprising a transistor and the light-emitting element according to claim 1 .

10. A lighting device comprising a light-emitting device comprising a light-emitting element according to claim 1 .

11. A light-emitting element comprising:

a light-emitting layer comprising a phosphorescent compound and a first compound;

wherein the first compound is capable of forming an exciplex,

wherein an emission peak wavelength of the exciplex is longer than or equal to a peak wavelength of an absorption of a triplet metal to ligand charge transfer transition of the phosphorescent compound and shorter than or equal to an emission peak wavelength of the phosphorescent compound.

12. The light-emitting element according to claim 11 , wherein excitation energy of the exciplex is transferred to the phosphorescent compound so that the phosphorescent compound emits phosphorescence.

13. The light-emitting element according to claim 11 , wherein a difference between the emission peak wavelength of the exciplex and the peak wavelength of the absorption of the triplet metal to ligand charge transfer transition of the phosphorescent compound is 30 nm or less.

14. The light-emitting element according to claim 11 , wherein the exciplex is formed from a singlet exciton of the first compound.

15. The light-emitting element according to claim 11 ,

wherein the light-emitting layer further comprises a second compound, and

wherein the first compound and the second compound are configured to form the exciplex.

16. The light-emitting element according to claim 15 , wherein the exciplex is formed from an anion of the first compound and a cation of the second compound.

17. The light-emitting element according to claim 15 , wherein at least one of the first compound and the second compound is a fluorescent compound.

18. The light-emitting element according to claim 11 , wherein the phosphorescent compound is an organometallic complex.

19. An electronic device comprising a light-emitting device comprising a transistor and the light-emitting element according to claim 11 .

20. A lighting device comprising a light-emitting device comprising a light-emitting element according to claim 11 .

Priority Claims (1)
JP 2011-064553 · Mar 23, 2011 · national
Continuity (2)
Continuation 13419892 · Mar 14, 2012
Related Publication 20160049607A1 · Feb 18, 2016