Random number generation circuit and semiconductor system including the same
A random number generation circuit may include a memory block. The random number generation circuit may include a fuse block configured to store an address of a failed memory cell from a memory cell array of the memory block, as a repair address, and generate a match signal by comparing the repair address with a normal address inputted from an exterior. The random number generation circuit may include a register configured to output a true random number by latching an address corresponding to activation timing of the match signal among normal addresses.
1. A random number generation circuit comprising:
a memory block;
a fuse block configured to store an address of a failed memory cell from a memory cell array of the memory block, as a repair address, and generate a match signal by comparing the repair address with a normal address inputted from an exterior; and
a register configured to output a true random number by latching an address corresponding to activation timing of the match signal among normal addresses.
2. The random number generation circuit according to claim 1 , further comprising:
a repair processing block configured to replace the failed memory cell in the memory cell array of the memory block, with a redundant memory cell, according to the match signal.
3. The random number generation circuit according to claim 1 , further comprising:
a data input/output unit configured to process input/output data of the memory block, and output the true random number to an exterior of a semiconductor memory through an input/output terminal,
wherein the random number generation circuit is included in a semiconductor memory.
4. The random number generation circuit according to claim 1 , further comprising:
a data input/output unit configured to perform output data encryption by encoding output data of the memory block and the true random number.
5. The random number generation circuit according to claim 1 , further comprising:
a data input/output unit configured to decode data inputted by being encrypted from an exterior, by using the true random number.
6. The random number generation circuit according to claim 1 , wherein during an activated enable signal received by the fuse block, the fuse block generates the match signal in response to the normal address having the same value as the repair address.
7. A semiconductor system comprising:
a substrate;
a semiconductor memory disposed in a first region over the substrate, and configured to generate a true random number by using an address value of a failed memory cell; and
a processor disposed in a second region over the substrate, and configured to perform data encryption communication inside a package or data encryption communication with a host located outside the package, by using the true random number.
8. The semiconductor system according to claim 7 , wherein the semiconductor memory includes one or more memory chips stacked therein.
9. The semiconductor system according to claim 7 ,
wherein the semiconductor memory includes one or more memory chips stacked therein, and
wherein each memory chip comprises:
a memory block;
a fuse block configured to store an address of a failed memory cell from a memory cell array of the memory block, as a repair address, and generate a match signal by comparing the repair address with a normal address inputted from an exterior; and
a register configured to output a true random number by latching an address corresponding to activation timing of the match signal among normal addresses.
10. The semiconductor system according to claim 9 , each memory chip further comprises:
a repair processing block configured to replace the failed memory cell in the memory cell array of the memory block, with a redundant memory cell, according to the match signal.
11. The semiconductor system according to claim 9 , each memory chip further comprises:
a data input/output unit configured to process input/output data of the memory block, and output the true random number to an exterior of the semiconductor memory through an input/output terminal.
12. The semiconductor system according to claim 9 , each memory chip further comprises:
a data input/output unit configured to perform output data encryption by encoding output data of the memory block and the true random number.
13. The semiconductor system according to claim 9 , each memory chip further comprises:
a data input/output unit configured to decode data inputted by being encrypted from the exterior of the semiconductor memory, by using the true random number.
14. The semiconductor system according to claim 9 , wherein during an activated enable signal received by the fuse block, the fuse block generates the match signal in response to the normal address having the same value as the repair address.
15. The semiconductor system according to claim 7 ,
wherein the semiconductor memory includes a logic chip and a plurality of memory chips which are sequentially stacked over the logic chip,
wherein the logic chip and the plurality of memory chips are electrically coupled through through vias, and
wherein any one of the plurality of memory chips generates the true random number and transmits the generated true random number to the logic chip through the through vias.
16. A semiconductor system comprising:
a substrate;
a semiconductor memory disposed in a first region over the substrate, and including a logic chip and a plurality of memory chips which are stacked over the logic chip; and
a processor disposed in a second region over the substrate, and configured to perform data encryption communication inside a package or data encryption communication with a host outside the package, by using a true random number,
wherein any one of the plurality of memory chips provides a match signal, the match signal generated by comparing a repair address and a normal address inputted from an exterior of the semiconductor memory, to the logic chip, and
where the logic chip is configured to output the true random number by latching an address corresponding to the match signal among normal addresses.
17. The semiconductor system according to claim 16 , wherein each memory chip comprises:
a memory block; and
a fuse block configured to store an address of a failed memory cell in a memory cell array of the memory block, as the repair address, and generate the match signal by comparing the repair address with the normal address.
18. The semiconductor system according to claim 17 , wherein during an activated enable signal received by the fuse block, the fuse block generates the match signal in response to the normal address having the same value as the repair address.
19. The semiconductor system according to claim 17 , wherein each memory chip further comprises:
a repair processing block configured to replace the failed memory cell with a redundant memory cell, according to the match signal.
20. The semiconductor system according to claim 16 ,
wherein the logic chip and the plurality of memory chips are electrically coupled through through vias, and
wherein any one of the plurality of memory chips generates the match signal and transmits the generated match signal to the logic chip through the through vias.
21. A random number generation circuit comprising:
a memory block including a memory cell array;
a fuse block configured to store an address of a failed memory cell from a memory cell array as a repair address; and
a register configured to output a value of the repair address as a true random number.
22. The random number generation circuit according to claim 21 ,
wherein the fuse block generates a match signal by comparing the repair address with a normal address, and
wherein the register outputs the true random number by latching an address corresponding to activation timing of the match signal among normal addresses.
23. The random number generation circuit according to claim 22 , wherein the fuse block generates the match signal by comparing the repair address with the normal address inputted from an exterior of the random number generation circuit.
24. The random number generation circuit according to claim 23 , wherein during an activated enable signal received by the fuse block, the fuse block generates the match signal in response to the normal address having the same value as the repair address.
25. The random number generation circuit according to claim 22 , further comprising:
a repair processing block configured to replace the failed memory cell in the memory cell array of the memory block, with a redundant memory cell, according to the match signal.