Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy
A layered stack includes a first layer having a first spin polarization and a first magnetic moment, as well as a second layer (in contact with the first layer) having a second spin polarization a second magnetic moment. The first and second spin polarizations have the same orientation, but the first and second magnetic moments have orientations that partially cancel each other, thereby recommending the layered stack for applications in magnetic tunnel junctions, for example.
1. A layered stack, comprising:
a first layer having a first tunneling spin polarization and a first magnetic moment of a first magnitude; and
a second layer having a second tunneling spin polarization and a second magnetic moment of a second magnitude different from the first magnitude,
wherein:
(i) the first and second layers are in physical contact with each other;
(ii) the first and second tunneling spin polarizations have the same orientation; and
(iii) the first and second magnetic moments have opposite orientations.
2. The layered stack of claim 1 , wherein:
the first layer includes Mn and Co; and
the second layer includes Mn and Sn.
3. The layered stack of claim 1 , wherein each of the first and second layers includes Mn.
4. The layered stack of claim 1 , wherein:
the first layer includes Mn and Os; and
the second layer includes Mn and Sn.
5. The layered stack of claim 1 , wherein:
the first layer includes Mn and W; and
the second layer includes Mn and Sb.
6. The layered stack of claim 1 , wherein:
the first layer includes Mn and Ru; and
the second layer includes Mn and Sn.
7. The layered stack of claim 1 , wherein:
the first layer includes Mn; and
the second layer includes Mn and Sb.
8. The layered stack of claim 1 , wherein:
the first layer includes Mn; and
the second layer includes Mn and Al.
9. The layered stack of claim 1 , wherein:
the first layer includes Mn; and
the second layer includes Mn and In.
10. The layered stack of claim 1 , comprising a tunnel barrier that is contact with both the first layer and the second layer.
11. The layered stack of claim 10 , wherein the tunnel barrier includes MgO.
12. The layered stack of claim 10 , comprising a first electrode in contact with the tunnel barrier, wherein the first layer and the second layer form a second electrode.
13. The layered stack of claim 1 , wherein the first and second magnetic moments are oriented perpendicular to the first and second layers.
14. A method, comprising:
passing current through the layered stack of claim 1 , the stack acting as a reference layer in a storage device.
15. A method, comprising:
passing current through the layered stack of claim 1 , the stack acting as a free layer in a storage device.