IP Library Granted Patent US 9,728,527
Granted Patent B2
US 9,728,527 · App. 14/925,807 · Granted Aug 8, 2017

Multiple bond via arrays of different wire heights on a same substrate

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Quick Facts
Patent No.
US 9,728,527
App. No.
14/925,807
Granted
Aug 8, 2017
Kind
B2
Abstract

An apparatus relating generally to a substrate is disclosed. In such an apparatus, a first bond via array has first wires extending from a surface of the substrate. A second bond via array has second wires extending from the surface of the substrate. The first bond via array is disposed at least partially within the second bond via array. The first wires of the first bond via array are of a first height. The second wires of the second bond via array are of a second height greater than the first height for coupling of at least one die to the first bond via array at least partially disposed within the second bond via array.

Claims (63)

1. A method, comprising:

obtaining a substrate;

feeding wire from a wire spool control head for:

forming a first bond via array of first wire bond wires (“first wires”) extending from a surface of the substrate having rows and columns of the first wires; and

forming a second bond via array of second wire bond wires (“second wires”) extending from the surface of the substrate having rows and columns of the second wires;

wherein the first bond via array and the second bond via array are external to the substrate;

wherein the first bond via array is disposed within a region of the second bond via array;

wherein the first wires of the first bond via array are of a first height; and

wherein the second wires of the second bond via array are of a second height greater than the first height for a package-on-package configuration;

wherein a first pitch of the first wires of the first bond via array is less than 0.5 mm; and

wherein a second pitch of the second wires of the second bond via array is a range of approximately 0.01 to 0.5 mm.

2. The method according to claim 1 , further comprising:

coupling a first die to the first bond via array; and

coupling a second die to the second bond via array;

wherein the second die is disposed over the first die.

3. The method according to claim 2 , wherein the first die and at least a portion of the second die are located within a perimeter of the second bond via array.

4. The method according to claim 2 , further comprising coupling opposing surfaces of the first die and the second die to one another.

5. The method according to claim 2 , further comprising attaching the first wires of the first bond via array and the second wires of the second bond via array by fusion bonding to the surface of the substrate.

6. The method according to claim 2 , wherein a portion of the second wires are formed as angled wires with an angle less than approximately 90 degrees with reference to the surface of the substrate.

7. The method according to claim 2 , wherein the first die and the second die are coupled to one another.

8. The method according to claim 7 , wherein the first die and the second die are coupled to one another by die-to-die interconnects.

9. The method according to claim 7 , wherein the first die and the second die are coupled to one another by a spacer layer.

10. The method according to claim 7 , wherein the first die and the second die are coupled to one another by a redistribution layer.

11. The method according to claim 2 , wherein the package-on-package configuration comprises:

the first die coupled to first ends of the first wires on a backside surface of the first die as a downward facing die; and

the second die coupled to second ends of the second wires on a backside surface of the second die as an upward facing die.

12. The method according to claim 2 , wherein the package-on-package configuration comprises:

the first die coupled to first ends of the first wires on a backside surface of the first die as a downward facing die; and

the second die coupled to second ends of the second wires on a backside surface of the second die as a downward facing die.

13. The method according to claim 2 , wherein the package-on-package configuration comprises:

the first die coupled to first ends of the first wires on a front side surface of the first die as an upward facing die; and

the second die coupled to second ends of the second wires on a backside surface of the second die as a downward facing die; and

wherein a backside surface of the first die is coupled to the backside surface of the second die by die-to-die interconnects.

14. The method according to claim 1 , wherein:

the first pitch of the first wires of the first bond via array is a first wire diameter of the first wires; and

the second pitch of the second wires of the second bond via array is a second wire diameter of the second wires.

15. The method according to claim 14 , wherein the first wire diameter is smaller than the second wire diameter.

16. The method according to claim 14 , wherein a portion of at least one of the first wires or the second wires includes angled wires thereof.

17. The method according to claim 1 , further comprising:

coupling an integrated circuit die to the first bond via array;

coupling a redistribution layer to the second bond via array; and

wherein the redistribution layer is disposed over the integrated circuit die.

18. A method, comprising:

feeding wire from a wire spool control head for:

forming a first bond via array of first wire bond wires extending from a surface of a die having rows and columns of the first wire bond wires; and

forming a second bond via array of second wire bond wires extending from a surface of a redistribution layer having rows and columns of the second wire bond wires;

wherein the first bond via array and the second bond via array are external to the die and the redistribution layer, respectively;

wherein the first bond via array is disposed within a region of the second bond via array;

wherein the first wire bond wires of the first bond via array are of a first height;

wherein the second wire bond wires of the second bond via array are of a second height greater than the first height for a package-on-package configuration;

wherein a first pitch of the first wire bond wires of the first bond via array is in less than 0.5 mm; and

wherein a second pitch of the second wire bond wires of the second bond via array is a range of approximately 0.01 to 0.5 mm.

19. A method, comprising:

feeding wire from a wire spool control head for:

forming a first bond via array of first wire bond wires extending from a surface of a first die having rows and columns of the first wire bond wires; and

forming a second bond via array of second wire bond wires extending from a surface of a second die having rows and columns of the second wire bond wires;

wherein the first bond via array and the second bond via array are external to the first die and the second die, respectively;

wherein the first bond via array is disposed within a region of the second bond via array;

wherein the first wire bond wires of the first bond via array are of a first height;

wherein the second wire bond wires of the second bond via array are of a second height greater than the first height for a package-on-package configuration;

wherein a first pitch of the first wire bond wires of the first bond via array is less than 0.5 mm; and

wherein a second pitch of the second wire bond wires of the second bond via array is a range of approximately 0.01 to 0.5 mm.

20. The method according to claim 1 , wherein the first wires and the second wires are made of different materials to provide at least one of different conductivities or e-moduli as between the first wires and the second wires.

Assignments (6)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073508/0661 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073689/0793 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 28, 2015
From: UZOH, CYPRIAN EMEKA; KATKAR, RAJESH
To: INVENSAS CORPORATION
Reel/Frame 036906/0707 →