Light-emitting device including reflective layer
View Patent ↗A light-emitting device comprises a substrate; a plurality of light-emitting diodes formed on the substrate, wherein each of the plurality of light-emitting diodes comprises a first conductivity type layer, an active layer on the first conductivity type layer, and a second conductivity type layer on the active layer; a reflective layer surrounding a sidewall of each of the plurality of light-emitting diodes; and a top electrode formed on the reflective layer and the plurality of light-emitting diodes.
1. A light-emitting device, comprising:
a substrate;
a first light-emitting diode formed on the substrate;
a second light-emitting diode formed on the substrate and separated from the first light-emitting diode by a space, wherein the space is a surface of the substrate;
a spacer layer formed on the space and surrounding multiple sidewalls of the first light-emitting diode and the second light-emitting diode;
a reflective layer formed on the spacer layer and surrounding the multiple sidewalls of the first light-emitting diode and the second light-emitting diode; and
a top electrode formed on the first light-emitting diode and the second light-emitting diode,
wherein the top electrode comprises transparent conductive material.
2. The light-emitting device according to claim 1 , wherein the top electrode is formed on the spacer layer.
3. A light-emitting device according to claim 1 , wherein each of the first light-emitting diode and the second light-emitting diode comprises a first conductivity type layer, an active layer on the first conductivity type layer, a second conductivity type layer on the active layer, and the reflective layer comprises a top surface lower than the active layer.
4. A light-emitting device according to claim 1 , wherein the spacer layer comprises an inclined sidewall.
5. A light-emitting device according to claim 1 , wherein the reflective layer comprises silver (Ag) or aluminum (Al).
6. The light-emitting device according to claim 1 , wherein the substrate comprises a sapphire substrate, a semiconductor substrate, a SiC substrate, or a silicon substrate.
7. The light-emitting device according to claim 1 , wherein the spacer layer comprises nitride, oxide, or SiO x N y .
8. The light-emitting device according to claim 1 , wherein the reflective layer is separated from the first light-emitting diode and the second light-emitting diode by the spacer layer.
9. The light-emitting device according to claim 1 , wherein the reflective layer is formed between the first light-emitting diode and the second light-emitting diode.
10. The light-emitting device according to claim 1 , wherein each of the first light-emitting diode and the second light-emitting diode comprises a rectangular shape from a top view of the light-emitting device.
11. The light-emitting device according to claim 1 , wherein the first light-emitting diode and the second light-emitting diode are separated from each other with a distance between 10 nm and 5000 nm.
12. A light-emitting device, comprising:
a substrate;
a first light-emitting diode formed on the substrate;
a second light-emitting diode formed on the substrate and separated from the first light-emitting diode by a space, wherein the space is a surface of the substrate;
a spacer layer formed on the space and surrounding multiple sidewalls of the first light-emitting diode and the second light-emitting diode;
a reflective layer formed on the space;
a top electrode formed on the first light-emitting diode and the second light-emitting diode, wherein the top electrode comprises transparent conductive material; and
a fill material formed on the first light-emitting diode and the second light-emitting diode, wherein one or multiple portions of the fill material is removed, and the top electrode is electrically connected to the first light-emitting diode and the second light-emitting diode through the one or multiple portions.
13. The light-emitting device according to claim 12 , wherein each of the first light-emitting diode and the second light-emitting diode comprises a first conductivity type layer, an active layer on the first conductivity type layer, a second conductivity type layer on the active layer, and the reflective layer comprises a top surface lower than the active layer.
14. The light-emitting device according to claim 12 , wherein the top electrode is formed on the spacer layer.
15. The light-emitting device according to claim 12 , wherein the spacer layer comprises an inclined sidewall.
16. The light-emitting device according to claim 12 , wherein the reflective layer comprises silver (Ag) or aluminum (Al).
17. The light-emitting device according to claim 12 , wherein the substrate comprises a sapphire substrate, a semiconductor substrate, a SiC substrate, or a silicon substrate.
18. The light-emitting device according to claim 12 , wherein the spacer layer comprises nitride, oxide, or SiO x N y .
19. The light-emitting device according to claim 12 , wherein the reflective layer is separated from the first light-emitting diode and the second light-emitting diode by the spacer layer.
20. The light-emitting device according to claim 12 , wherein each of the first light-emitting diode and the second light-emitting diode comprises a rectangular shape from a top view of the light-emitting device.
21. The light-emitting device according to claim 12 , wherein the first light-emitting diode and the second light-emitting diode are separated from each other with a distance between 10 nm and 5000 nm.