Hybrid semiconductor structure on a common substrate
A semiconductor structure includes a first device and a second device. The first device has a first surface. The first device includes a first active region defined by a first material system. The second device has a second surface. The second surface is coplanar with the first surface. The second device includes a second active region defined by a second material system. The second material system is different from the first material system.
1. A semiconductor structure, comprising:
a first device having a first surface, the first device including:
a first active region defined by a first material system; and
a second device having a second surface, the second surface being coplanar with the first surface, the second device including:
a second active region defined by a second material system, wherein the second material system is different from the first material system,
wherein the first device and the second device further include a layer of the second material system, and the first surface and the second surface being a top surface of the layer of the second material system.
2. The semiconductor structure of claim 1 , wherein the first material system includes Si, and the second material system includes a III-V material.
3. The semiconductor structure of claim 1 , wherein the first device and the second device further includes a substrate, the substrate comprising a first device region associated with the first device and a second device region associated with the second device; the first active region being disposed in the first device region.
4. The semiconductor structure of claim 1 , wherein the second active region being in the layer.
5. The semiconductor structure of claim 1 , wherein the first device comprises an isolation region in the layer of the second material system and over the first active region.
6. The semiconductor structure of claim 5 , wherein the isolation region has a first side and a second side opposite to the first side, and the first active region has a first side and a second side opposite to the first side, wherein a first distance between the first side and the second side of the isolation region is greater than a second distance between the first side and the second side of the first active region.
7. The semiconductor structure of claim 6 , wherein a difference of the first distance to the second distance is less than 10 μm.
8. The semiconductor structure of claim 1 , wherein the layer comprises a first bandgap layer and a second bandgap layer on the first band gap layer, bandgap of the second bandgap layer being greater than that of the first bandgap layer.
9. The semiconductor structure of claim 8 , wherein the first device comprises an isolation region over the first device region and across an interface between the first bandgap layer and the second bandgap layer.
10. The semiconductor structure of claim 1 , further comprising a patterned conductive layer on the layer of the second material system, wherein the first device further comprises an interconnect penetrating through the layer, and connecting the patterned conductive layer and the first active region.
11. A semiconductor structure, comprising:
a silicon substrate having an active region therein; and
a III-V layer on the substrate and over the active region of the silicon substrate.
12. The semiconductor structure of claim 11 , wherein the III-V layer includes:
a first bandgap layer on the substrate; and
a second bandgap layer on the first bandgap layer, wherein bandgap of the bandgap layer is greater than that of the first bandgap layer.
13. The semiconductor structure of claim 12 , further comprising:
an isolation region across an interface between the first bandgap layer and the bandgap layer.
14. The semiconductor structure of claim 13 , wherein the isolation comprises a first side and a second side opposite to the first side, and the active comprises a first side and a second side opposite to the first side, wherein a between the first side and the second side of the isolation region is greater than between the first side and the second side of the active region.
15. The semiconductor structure of claim 11 , comprising:
a patterned conductive layer on the III-V layer; and
an interconnect penetrating through the III-V layer, and connecting the conductive layer and the active region.
16. A semiconductor structure, comprising:
a silicon substrate having a first active region in a first device region of the silicon substrate; and
a III-V layer having a second active region therein, wherein the III-V layer is on the silicon substrate, and over the first active region of the silicon substrate, wherein the second active region is over a second device region of the silicon substrate, wherein the second device region is immediately adjacent to the first device region.
17. The semiconductor structure of claim 16 , wherein the III-V layer includes:
a first bandgap layer on the silicon substrate; and
a second bandgap layer on the first bandgap layer, wherein bandgap of the second bandgap layer is greater than that of the first bandgap layer.
18. The semiconductor structure of claim 17 , further comprising:
an isolation region across an interface between the first bandgap layer and the second bandgap layer.
19. The semiconductor structure of claim 16 , further comprising:
a patterned conductive layer on the III-V layer; and
an interconnect penetrating through the III-V layer, and connecting the patterned conductive layer and the first active region.