System in package
View Patent ↗An electronic system without using solder balls between electrical components, and without using interposer between chips and package substrate, without using a discrete system board for the chip package to mount. A chip is wrapped by molding material, a first redistribution circuitry is built on a bottom side of the molding material; a second redistribution circuitry is built on a bottom side of the first redistribution circuitry. A third redistribution circuitry is built on a bottom side of the second redistribution circuitry. Plated metal vias are configured between each two of the electrical components.
1. A System in Package (SiP), comprising:
at least one chip having a plurality of input/output (I/O) pads;
a molding material wrapping the chip;
a first redistribution circuitry configured according to integrated circuit (IC) design rule and on a bottom of the molding material, the first redistribution circuitry electrically coupled to the plurality of I/O pads of the chip through a plurality of first metal vias;
a second redistribution circuitry configured according to printed circuit board (PCB) design rule and on a bottom of the first redistribution circuitry, the second redistribution circuitry electrically coupled to the first redistribution circuitry through a plurality of second metal vias;
a first dielectric layer embedding the first redistribution circuitry therein;
a second dielectric layer embedding the second redistribution circuitry therein; and
a plurality of first gold fingers configured on a bottommost surface of the second dielectric layer, the plurality of first gold fingers being exposed to an outside of the SiP to define I/O contacts for the SiP,
wherein
the molding material has a topmost surface coplanar with a topmost surface of the chip,
a topmost surface of the second dielectric layer is in direct contact with a bottommost surface of the first dielectric layer,
the second dielectric layer has an extended area extending beyond a side edge of the first dielectric layer, the plurality of first gold fingers being configured on the bottommost surface of the second dielectric layer and in the extended area of the second dielectric layer, and
the SiP further comprises:
a plurality of second gold fingers configured on the topmost surface of the second dielectric layer and in the extended area of the second dielectric layer, the plurality of second gold fingers being exposed to the outside of the SiP to define further I/O contacts for the SiP.
2. The SiP as claimed in claim 1 , further comprising:
a flexible circuit board having a plurality of third gold fingers corresponding to the plurality of first gold fingers, and adapted to be electrically coupled to the plurality of the first gold fingers.
3. The SiP as claimed in claim 1 , further comprising:
a plurality of openings configured on the bottommost surface of the second dielectric layer,
wherein each opening among the plurality of openings exposes a bottom surface of a corresponding bottom metal pad of a lowermost circuit layer of the second redistribution circuitry.
4. The SiP as claimed in claim 3 , further comprising:
at least one passive element electrically coupled to the exposed bottom metal pads through the plurality of openings,
wherein the at least one passive element is completely below the bottommost surface of the second dielectric layer.
5. The SiP as claimed in claim 1 , wherein
in a thickness direction of the SiP, the first redistribution circuitry is between the molding material and the second redistribution circuitry,
in the thickness direction of the SiP, the plurality of first gold fingers overlap the plurality of second gold fingers,
in the thickness direction, the plurality of first gold fingers and the plurality of second gold fingers do not overlap the first redistribution circuitry, the chip and the molding material, and
the plurality of first gold fingers and the plurality of second gold fingers are configured to be electrically coupled into a gold finger socket to electrically couple the SiP with an additional electronic component.
6. The SiP as claimed in claim 5 , further comprising:
at least one passive element; and
a plurality of openings configured on the bottommost surface of the second dielectric layer,
wherein
each opening among the plurality of openings exposes a bottom surface of a corresponding bottom metal pad of a lowermost circuit layer of the second redistribution circuitry,
the at least one passive element is electrically coupled to the exposed bottom metal pads through the plurality of openings, and
the at least one passive element is completely below the bottommost surface of the second dielectric layer.
7. The SiP as claimed in claim 6 , wherein the at least one passive element includes at least one of a resistor, a capacitor, and an inductor.
8. A System in Package (SiP), comprising:
at least one chip having a plurality of input/output (I/O) pads;
a molding material wrapping the chip;
a first redistribution circuitry fabricated according to integrated circuit (IC) design rule, and configured on a bottom of the molding material, the first redistribution circuitry electrically coupled to the plurality of PO pads of the chip through a plurality of first metal vias; and
a second redistribution circuitry fabricated according to printed circuit board (PCB) design rule, and configured on a bottom of the first redistribution circuitry, the second redistribution circuitry electrically coupled to the first redistribution circuitry through a plurality of second metal vias,
wherein the SiP is free of solder balls, an interposer, a package substrate, a system board, and underfill.
9. The SiP as claimed in claim 8 , further comprising:
a first dielectric layer embedding the first redistribution circuitry therein; and
a second dielectric layer embedding the second redistribution circuitry therein,
wherein a topmost surface of the second dielectric layer is in direct contact with a bottommost surface of the first dielectric layer.
10. The SiP as claimed in claim 9 , wherein each of the plurality of first metal vias includes a metal plated in a corresponding hole in the molding material.
11. The SiP as claimed in claim 10 , wherein each of the plurality of second metal vias includes a metal plated in a corresponding hole in the first dielectric layer.
12. The SiP as claimed in claim 9 , further comprising:
a plurality of first gold fingers configured on a bottommost surface of the second dielectric layer, the plurality of first gold fingers being exposed to an outside of the SiP to define I/O contacts for the SiP.
13. The SiP as claimed in claim 9 , wherein the molding material wraps four side surfaces and a bottommost surface of the chip, but leaves a topmost surface of the chip exposed to an outside of the SiP.