External gettering method and device
View Patent ↗Disclosed embodiments include external gettering provided by electronic packaging. An external gettering element for a semiconductor substrate, which may be incorporated as part of an electronic packaging for the structure, is disclosed. Semiconductor structures and stacked semiconductor structures including an external gettering element are also disclosed. An encapsulation mold compound providing external gettering is also disclosed. Methods of fabricating such devices are also disclosed.
1. A method of providing gettering to a semiconductor device, the method comprising:
providing a first semiconductor substrate, the first semiconductor substrate comprising a front side, a backside opposite the front side, a first section at the front side for forming semiconductor devices, and a second section at the backside;
performing a stress-relief process at the backside of the first semiconductor substrate; and
applying an external gettering element adjacent to the second section of the first semiconductor substrate, the external gettering element comprising:
a first gettering material, the first gettering material including an additive which provides the first gettering material with ions, the ions provided by the additive having the property of attracting ions and/or contaminants contained within the first semiconductor substrate away from the front side, and an adhesive material configured to adhere the first gettering material to the stress-relieved backside of the first semiconductor substrate.
2. The method of claim 1 wherein the adhesive material is a dual-sided adhesive material, the method further comprising:
providing a second semiconductor substrate, the second semiconductor substrate comprising a third section for forming semiconductor devices and a fourth section; and
adhering the second semiconductor substrate to the first semiconductor substrate using the dual-sided adhesive.
3. The method of claim 2 wherein adhering the second semiconductor substrate to the first semiconductor substrate further comprises: performing a stress-relief process at the fourth section of the second semiconductor substrate; imbuing a gettering material with ions in order to attract ions and/or contaminants within the second semiconductor substrate toward the fourth section; adhering the gettering material to the fourth section of the second semiconductor substrate using the dual-sided adhesive material.
4. The method of claim 1 wherein the adhesive material is a dual-sided adhesive material, the method further comprising:
providing a second semiconductor substrate, the second semiconductor substrate comprising a third section for forming semiconductor devices and a fourth section;
performing a stress-relief process at the fourth section of the second semiconductor substrate; and
adhering the fourth section of the second semiconductor substrate to the second section of the first semiconductor substrate using the dual-sided adhesive material, wherein the external gettering element provides gettering to the first and third sections.
5. The method of claim 1 wherein the adhesive material is a dual-sided adhesive material, the method further comprising:
providing a second semiconductor substrate, the second semiconductor substrate comprising a third section for forming semiconductor devices and a fourth section; and
adhering the third section of the second semiconductor substrate to the second section of the first semiconductor substrate using the dual-sided adhesive material.
6. The method of claim 1 wherein the adhesive material is a die attach film.
7. The method of claim 1 wherein the gettering material comprises at least one of:
a polymeric material;
a ceramic material;
a silicon material; and
an epoxy-based material.
8. The method of claim 1 wherein the ions include organic or inorganic ions.
9. The method of claim 1 , further comprising molding an encapsulation material around the first gettering material.
10. The method of claim 9 wherein the encapsulation material has a gettering material embedded therein.
11. The method of claim 1 wherein the gettering material comprises a substrate that is compliant with electronic packaging.
12. The method of claim 1 wherein the gettering material is integrated into the adhesive material.
13. The method of claim 1 wherein the gettering element is a first gettering element, and wherein the method further comprises:
bonding a second semiconductor substrate to the first semiconductor substrate, wherein the second semiconductor substrate has a front side and a backside opposite the front side of the second semiconductor substrate and at which electrical devices are formed; and
applying a second gettering element to the backside of the second semiconductor substrate, the second gettering element including a second gettering material containing an additive which provides the second gettering material with ions, the ions contained in the second getting material having the property of attracting ions and/or contaminants within the second semiconductor substrate away from the front side of the second semiconductor substrate.
14. The method of claim 13 , wherein the bonding includes bonding the first and second semiconductor substrates such that the first and second gettering elements are located between the bonded first and second semiconductor substrates.
15. The external gettering element of claim 1 , further comprising adhering a backside of a second semiconductor substrate to the gettering material, wherein the second semiconductor substrate includes a front side opposite the backside of the second semiconductor substrate and at which electrical devices are formed.
16. The external gettering element of claim 1 , wherein the first gettering material is a stand-alone material which is not integrated with the adhesive material.