Plasma uniformity control by gas diffuser hole design
Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
1. A gas distribution plate assembly for a plasma processing chamber, comprising:
a diffuser plate element having an edge, a center, a concave upstream side and a downstream side; and
inner and outer gas passages passing between the upstream and downstream sides of the diffuser plate element from the center to the edge of the diffuser plate element, each gas passage having:
an orifice hole having a first diameter; and
a hollow cathode cavity that is downstream of the orifice hole and is at the downstream side, the hollow cathode cavity having a cone or cylinder shape and a second diameter at the downstream side that is greater than the first diameter, the second diameters or the depths or a combination of both of the cones or cylinders increases from the center to the edge of the diffuser plate element, the first diameters are substantially uniform from the center to the edge of the diffuser plate element.
2. The gas distribution plate assembly of claim 1 , wherein the downstream side is concave.
3. The gas distribution plate assembly of claim 1 , wherein the diffuser plate element has a first thickness at the edge and a second thickness at the center.
4. The gas distribution plate assembly of claim 3 , wherein a third thickness between the first thickness at the edge and the second thickness at the center is tapered.
5. The gas distribution plate assembly of claim 1 , wherein the orifice holes are shaped to promote an even flow of gas therethrough.
6. The gas distribution plate assembly of claim 1 , wherein the orifice holes are configured uniformly among the gas passages.
7. The gas distribution plate assembly of claim 1 , wherein the orifice holes are configured non-uniformly among the gas passages.
8. A plasma processing chamber, comprising:
a diffuser plate element having an edge, a center, a concave upstream side and a downstream side;
a RF power source coupled to the diffuser plate element;
inner and outer gas passages passing between the upstream and downstream sides of the diffuser plate element from the center to the edge of the diffuser plate element, each gas passage having:
an orifice hole having a first diameter; and
a hollow cathode cavity that is downstream of the orifice hole and is at the downstream side, the hollow cathode cavity having a cone or cylinder shape and a second diameter at the downstream side that is greater than the first diameter, the second diameters or the depths or a combination of both of the cones or cylinders increases from the center to the edge of the diffuser plate element, the first diameters are substantially uniform from the center to the edge of the diffuser plate element; and
a substrate support adjacent the downstream side of the diffuser plate element.
9. The plasma processing chamber of claim 8 , wherein the downstream side is concave.
10. The plasma processing chamber of claim 8 , wherein the diffuser plate element has a first thickness at the edge and a second thickness at the center.
11. The plasma processing chamber of claim 10 , wherein a third thickness between the first thickness at the edge and the second thickness at the center is tapered.
12. The plasma processing chamber of claim 8 , wherein the orifice holes are shaped to promote an even flow of gas therethrough.
13. The plasma processing chamber of claim 8 , wherein the orifice holes are configured uniformly among the gas passages.
14. The plasma processing chamber of claim 8 , wherein the orifice holes are configured non-uniformly among the gas passages.