Three-dimensional memory apparatuses and methods of use
A three dimensional (3D) memory array may include a plurality of memory cells. An example 3D memory array may include an electrode plane and a memory material disposed through and coupled to the electrode plane. A memory cell included in the memory material is aligned in a same plane as the electrode plane, and the memory cell is configured to exhibit a first threshold voltage representative of a first logic state and a second threshold voltage representative of a second logic state. A conductive pillar is disposed through and coupled to the memory cell, wherein the conductive pillar and electrode plane are configured to provide a voltage across the memory cell to write a logic state to the memory cell.
1. An apparatus comprising:
an electrode plane;
a memory material disposed through and coupled to the electrode plane;
a memory cell included in the memory material aligned in a same plane as the electrode plane, the memory cell configured to exhibit a first threshold voltage representative of a first logic state and a second threshold voltage representative of a second logic state, wherein the memory cell is further configured to act as a two-terminal threshold switching device and a memory element, wherein relative voltage values between two-terminal threshold switching devices determine a magnitude and a polarity applied on the memory cell; and
a conductive pillar disposed through and coupled to the memory cell, wherein the conductive pillar configured to receive a first voltage and the electrode plane configured to receive a second voltage across the memory cell to write a logic state to the memory cell.
2. The apparatus of claim 1 , further comprising an electrode cylinder disposed between the conductive pillar and the memory material.
3. The apparatus of claim 1 , wherein the memory material and conductive pillar are formed as concentric cylinders.
4. The apparatus of claim 1 , further comprising a second electrode plane parallel to the electrode plane, the memory material and conductive pillar extending through and coupled to the second electrode plane.
5. The apparatus of claim 4 , wherein the memory material comprises a second memory cell associated with the second electrode plane.
6. The apparatus of claim 4 , further comprising a dielectric material disposed between the electrode plane and the second electrode plane.
7. The apparatus of claim 1 , further comprising a plurality of conductive pillars and corresponding memory material disposed through the electrode plane, wherein the plurality of conductive pillars and corresponding memory material form an array.
8. The apparatus of claim 1 , wherein the electrode plane is coupled to a first memory access line and the conductive pillar is coupled to a second memory access line.
9. The apparatus of claim 1 , wherein the conductive pillar and electrode plane are further configured to provide a second voltage across the memory cell to read the first logic state and the second logic state.
10. An apparatus, comprising:
a memory column including a ring-shaped memory cell, a conductive pillar, and an electrode material disposed between the ring-shaped memory cell and the conductive pillar, wherein the ring-shaped memory cell is configured to act as a two-terminal threshold switching device and a memory element, wherein relative voltage values between two-terminal threshold switching devices determine a magnitude and a polarity applied on the ring-shaped memory cell;
a stack of alternating plurality of electrode planes and plurality of dielectric material, wherein the ring-shaped memory cell is aligned in an electrode plane of the plurality of electrode planes;
a write pulse is applied by providing a first voltage to the conductive pillar and a second voltage to an electrode plane comprising the stack of alternating plurality of electrode planes; and
an opening through the stack, wherein the memory column is disposed in the opening.
11. The apparatus of claim 10 wherein the ring-shaped memory cell is included in a memory material extending a length of the memory column.
12. The apparatus of claim 10 , wherein the plurality of electrode planes comprises a plurality of thin films.
13. The apparatus of claim 10 , wherein the plurality of dielectric material comprises an oxide.
14. The apparatus of claim 11 , wherein the memory material comprises a chalcogenide.
15. The apparatus of claim 10 , wherein the electrode material comprises a barrier material.
16. An apparatus, comprising:
an electrode plane;
a plurality of ring-shaped memory cells aligned in the electrode plane as a two-dimensional array, wherein the plurality of ring-shaped memory cells are configured to act as two-terminal threshold switching devices and memory elements, wherein relative voltage values between two-terminal threshold switching devices determine a magnitude and a polarity applied on the plurality of ring-shaped memory cells; and
a write pulse is applied by providing a first voltage to a conductive pillar and a second voltage to the electrode plane.
17. The apparatus of claim 16 , further comprising a plurality of conductive pillars within the plurality of ring-shaped memory cells.
18. The apparatus of claim 16 , further comprising a plurality of ring-shaped electrode cylinders within the plurality of ring-shaped memory cells.
19. The apparatus of claim 16 , further comprising:
a second electrode plane; and
a second plurality of ring-shaped memory cells aligned in the second electrode plane.
20. The apparatus of claim 19 , wherein the second plurality of ring-shaped memory cells are vertically aligned with the plurality of ring-shaped memory cells.
21. The apparatus of claim 16 , wherein the plurality of memory cells are configured to exhibit a first threshold voltage representative of a first logic state responsive to programming with a voltage having a first polarity and a second threshold voltage representative of a second logic state responsive to programming with a voltage having a second polarity.
22. An apparatus comprising:
an electrode plane;
an array of conductive pillars disposed through the electrode plane;
an array of memory cells formed as concentric rings around the conductive pillars of the array of conductive pillars, wherein the array of memory cells are aligned in a same plane as the electrode plane, wherein the array of memory cells are configured to act as two-terminal threshold switching devices and memory elements, wherein relative voltage values between two-terminal threshold switching devices determine a magnitude and a polarity applied on the array of memory cells; and
a write pulse is applied by providing a first voltage to the conductive pillars of the array of conductive pillars and a second voltage to an electrode plane.
23. The apparatus of claim 22 , wherein the memory cells of the array of memory cells are configured to act as two-terminal threshold switching devices.
24. The apparatus of claim 22 , wherein the electrode plane, the array of conductive pillars, and the array of memory cells are included in a three-dimensional memory array.
25. The apparatus of claim 22 , wherein the memory cells of the array of memory cells include a chalcogenide.
26. The apparatus of claim 22 , wherein the memory cells of the array of memory cells have a thickness equal to a thickness of the electrode plane.