Vibrating device
A vibrating device having a number 2N (N is an integer equal to 2 or larger) of tuning fork arms extending in a first direction are arranged side by side in a second direction. Phases of flexural vibrations of the number N of tuning fork arms positioned at a first side of an imaginary line A, which passes a center of a region in the second direction where the number 2N of tuning fork arms are disposed and which extends in the first direction, are symmetric to phases of flexural vibrations of the number N of tuning fork arms positioned at a second side of the imaginary line opposite the first side.
1. A vibrating device comprising:
a base portion; and
a number 2N of tuning fork arms joined to one end of the base portion and extending in a first direction, N being an integer equal to 2 or larger,
wherein the number 2N of tuning fork arms are arranged side by side in a second direction that is perpendicular to the first direction, each of the tuning fork arms configured to flexurally vibrate in a third direction that is perpendicular to the second direction and the first direction,
phases of flexural vibrations of the number N of tuning fork arms positioned at a first side of an imaginary line, which passes a center of a region in the second direction where the number 2N of tuning fork arms are disposed and which extends in the first direction, are symmetric to phases of the flexural vibrations of the number N of tuning fork arms positioned at a second side of the imaginary line opposite to the first side,
the number N is two, and a first set of two tuning fork arms positioned at the first side of the imaginary line and a second set of two tuning fork arms positioned at the second side of the imaginary line have flexural vibrations in opposite phases, and
the first set of two tuning fork arms have piezoelectric layers polarized in an opposite direction to piezoelectric layers of the second set of two tuning fork arms.
2. The vibrating device according to claim 1 , wherein a width of an end portion of each tuning fork arm at a side opposite to an end portion thereof joined to the base portion is larger than a width of the end portion joined to the base portion.
3. The vibrating device according to claim 2 , further comprising a mass adding portion at the end portion of each tuning fork arm at the side opposite to the end portion thereof joined to the base portion, the mass adding portion having a larger width than its respective tuning form arm.
4. A vibrating device comprising:
a base portion; and
a number 2N of tuning fork arms joined to one end of the base portion and extending in a first direction, N being an integer equal to 2 or larger,
wherein the number 2N of tuning fork arms are arranged side by side in a second direction that is perpendicular to the first direction, each of the tuning fork arms configured to flexurally vibrate in a third direction that is perpendicular to the second direction and the first direction,
phases of flexural vibrations of the number N of tuning fork arms positioned at a first side of an imaginary line, which passes a center of a region in the second direction where the number 2N of tuning fork arms are disposed and which extends in the first direction, are symmetric to phases of the flexural vibrations of the number N of tuning fork arms positioned at a second side of the imaginary line opposite to the first side,
the number N is two, and a first set of two tuning fork arms positioned at the first side of the imaginary line and a second set of two tuning fork arms positioned at the second side of the imaginary line have flexural vibrations in opposite phases, and
a ratio of a first width between the two tuning fork arms of the first set of two tuning fork arms and a second width between the first set of two tuning fork arms and the second set of two tuning fork arms is ≧0.5.
5. A vibrating device comprising:
a base portion; and
a number 2N of tuning fork arms joined to one end of the base portion and extending in a first direction, N being an integer equal to 2 or larger,
wherein the number 2N of tuning fork arms are arranged side by side in a second direction that is perpendicular to the first direction, each of the tuning fork arms configured to flexurally vibrate in a third direction that is perpendicular to the second direction and the first direction,
phases of flexural vibrations of the number N of tuning fork arms positioned at a first side of an imaginary line, which passes a center of a region in the second direction where the number 2N of tuning fork arms are disposed and which extends in the first direction, are symmetric to phases of the flexural vibrations of the number N of tuning fork arms positioned at a second side of the imaginary line opposite to the first side,
the number N is two, and a first set of two tuning fork arms positioned at the first side of the imaginary line and a second set of two tuning fork arms positioned at the second side of the imaginary line have flexural vibrations in opposite phases, and
a ratio of a first width between the two tuning fork arms of the first set of two tuning fork arms and a second width between the first set of two tuning fork arms and the second set of two tuning fork arms is ≧1.0.
6. A vibrating device comprising:
a base portion; and
a number 2N of tuning fork arms joined to one end of the base portion and extending in a first direction, N being an integer equal to 2 or larger,
wherein the number 2N of tuning fork arms are arranged side by side in a second direction that is perpendicular to the first direction, each of the tuning fork arms configured to flexurally vibrate in a third direction that is perpendicular to the second direction and the first direction, and
phases of flexural vibrations of the number N of tuning fork arms positioned at a first side of an imaginary line, which passes a center of a region in the second direction where the number 2N of tuning fork arms are disposed and which extends in the first direction, are symmetric to phases of the flexural vibrations of the number N of tuning fork arms positioned at a second side of the imaginary line opposite to the first side,
each of the tuning fork arms includes a Si layer made of a degenerate semiconductor, a silicon oxide layer, a piezoelectric layer, and first and second electrodes through which a voltage is applied to the piezoelectric layer, and
a thickness ratio T 2 /(T 1 +T 2 ) is within a range of (−0.0002x 2 −0.0136x+0.0014)±0.05, T 1 representing a thickness of the Si layer, and T 2 representing a thickness of the silicon oxide layer.
7. The vibrating device according to claim 6 , wherein the number N is two, and a first set of two tuning fork arms positioned at the first side of the imaginary line and a second set of two tuning fork arms positioned at the second side of the imaginary line have flexural vibrations in opposite phases.
8. The vibrating device according to claim 6 , wherein the Si layer is doped with an n-type dopant.
9. The vibrating device according to claim 8 , wherein the dopant is phosphorus.
10. The vibrating device according to claim 6 , wherein the Si layer is doped with an n-type dopant.
11. The vibrating device according to claim 10 , wherein the dopant is phosphorus.
12. A vibrating device comprising:
a base portion; and
a number 2N of tuning fork arms joined to one end of the base portion and extending in a first direction, N being an integer equal to 2 or larger,
wherein the number 2N of tuning fork arms are arranged side by side in a second direction that is perpendicular to the first direction, each of the tuning fork arms configured to flexurally vibrate in a third direction that is perpendicular to the second direction and the first direction,
phases of flexural vibrations of the number N of tuning fork arms positioned at a first side of an imaginary line, which passes a center of a region in the second direction where the number 2N of tuning fork arms are disposed and which extends in the first direction, are symmetric to phases of the flexural vibrations of the number N of tuning fork arms positioned at a second side of the imaginary line opposite to the first side,
each of the tuning fork arms includes a Si layer made of a degenerate semiconductor, a silicon oxide layer, a piezoelectric layer, and first and second electrodes through which a voltage is applied to the piezoelectric layer, and
a first set of tuning fork arms of the number 2N of tuning fork arms have their piezoelectric layers polarized in an opposite direction to the piezoelectric layers of a second set of two tuning fork arms of the number 2N of tuning fork arms.
13. The vibrating device according to claim 12 , wherein the Si layer is doped with an n-type dopant.
14. The vibrating device according to claim 13 , wherein the dopant is phosphorus.
15. The vibrating device according to claim 12 , wherein the Si layer is doped with an n-type dopant.
16. The vibrating device according to claim 15 , wherein the dopant is phosphorus.
17. The vibrating device according to claim 12 , wherein the number N is two, and a first set of two tuning fork arms positioned at the first side of the imaginary line and a second set of two tuning fork arms positioned at the second side of the imaginary line have flexural vibrations in opposite phases.