Semiconductor device structures including ferroelectric memory cells
A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material.
1. A semiconductor device structure comprising:
an electrode comprising titanium nitride in a dominant (111) crystallographic orientation over a substrate;
a ferroelectric material over the electrode, the ferroelectric material comprising a hafnium-based material in a dominant (200) crystallographic orientation; and
another electrode over the ferroelectric material.
2. The semiconductor device structure of claim 1 , wherein the ferroelectric material comprises hafnium silicate, hafnium aluminate, hafnium zirconate, strontium-doped hafnium oxide, magnesium-doped hafnium oxide, gadolinium-doped hafnium oxide, yttrium-doped hafnium oxide, or combinations thereof.
3. The semiconductor device structure of claim 1 , wherein the ferroelectric material comprises hafnium silicate comprising from about 4.4 mol % to about 5.6 mol % silicon.
4. The semiconductor device structure of claim 1 , wherein the ferroelectric material comprises a crystalline, doped hafnium oxide material.
5. The semiconductor device structure of claim 1 , wherein the another electrode comprises titanium nitride.
6. The semiconductor device structure of claim 1 , further comprising a metal silicide material over the another electrode.
7. The semiconductor device structure of claim 1 , wherein the ferroelectric material comprises orthorhombic hafnium silicate.
8. The semiconductor device structure of claim 1 , wherein the ferroelectric material comprises from 0.1 mol % to about 70 mol % of a dopant.
9. The semiconductor device structure of claim 1 , wherein the ferroelectric material comprises hafnium silicate comprising from about 4 mol % to about 6 mol % silicon.
10. The semiconductor device structure of claim 1 , wherein the ferroelectric material comprises hafnium aluminate comprising from about 5 mol % to about 7 mol % aluminum.
11. The semiconductor device structure of claim 1 , wherein the ferroelectric material comprises yttrium-doped hafnium oxide comprising from about 2.5 mol % to about 5.5 mol % yttrium.
12. The semiconductor device structure of claim 1 , wherein the another electrode comprises crystalline titanium nitride.
13. The semiconductor device structure of claim 1 , wherein the ferroelectric material comprises orthorhombic hafnium silicate in the dominant (200) crystallographic orientation.
14. A semiconductor device structure comprising:
an electrode comprising titanium nitride in a dominant (111) crystallographic orientation over a substrate;
a ferroelectric material over the electrode, the ferroelectric material comprising hafnium silicate comprising a dominant (200) crystallographic orientation; and
another electrode over the ferroelectric material.
15. A semiconductor device structure comprising:
an electrode comprising titanium nitride in a dominant (111) crystallographic orientation over a substrate;
a ferroelectric material over the electrode, the ferroelectric material comprising hafnium zirconate comprising from about 40 mol % to about 70 mol % zirconium; and
another electrode over the ferroelectric material.
16. A semiconductor device structure comprising:
an electrode comprising titanium nitride in a dominant (111) crystallographic orientation over a substrate;
orthorhombic hafnium silicate in a dominant (200) crystallographic orientation over the electrode; and
another electrode comprising titanium nitride over the orthorhombic hafnium silicate.