Method of manufacturing electrical device
View Patent ↗A method of manufacturing an electrical device comprising steps of: preparing a substrate; applying a conductive paste onto the substrate, wherein the conductive paste comprises (i) an inorganic powder comprising at least a conductive powder, (ii) an organic polymer, (iii) a solvent and (iv) a gellant selected from the group consisting of a polyalkyleneoxy terminated polyamide (PAOPA), an ester terminated polyamide (ETPA), polyether polyamine (PEPA) and a mixture thereof; and heating the applied conductive paste to form an electrode.
1. A method of manufacturing an electrical device, the method comprising:
preparing a substrate;
applying a conductive paste onto the substrate, wherein the conductive paste comprises (i) an inorganic powder comprising at least a conductive powder, (ii) an organic polymer, (iii) a solvent and (iv) a gellant selected from the group consisting of a polyalkyleneoxy terminated polyamide (PAOPA), an ester terminated polyamide (ETPA), polyether polyamine (PEPA) and a mixture thereof, wherein the gellant is 0.05 to 15 wt % based on the weight of the conductive paste; and
heating the applied conductive paste to form an electrode.
2. The method of claim 1 , wherein the substrate is ceramic substrate, glass substrate, polymer film substrate or semiconductor substrate.
3. The method of claim 1 , wherein the inorganic powder further comprises a glass frit.
4. The method of claim 1 , wherein weight ratio of the solvent and the gellant (solvent:gellant) is 10:1 to 50:1.
5. The method of claim 1 , wherein softening point of the gellant is 70 to 120° C.
6. The method of claim 1 , wherein molecular weight (Mw) of the gellant is 1,000 to 100,000.
7. The method of claim 1 , wherein viscosity of the conductive paste is 330 to 550 Pa·s at 25° C.
8. The method of claim 1 , wherein width of the electrode is 10 to 45 μm.
9. The method of claim 1 , wherein the electrical device is a solar cell.
10. The method of claim 9 , wherein the solar cell comprises a semiconductor substrate having at least one passivation layer on a light receiving side thereof.
11. The method of claim 10 , wherein the conductive paste is applied on the passivation layer on a light receiving side and the conductive paste penetrates the passivation layer during heating.
12. A conductive paste comprising:
(i) an inorganic powder comprising at least a conductive powder;
(ii) an organic polymer;
(iii) a solvent; and
(iv) a gellant selected from the group consisting of a polyalkyleneoxy terminated polyamide (PAOPA), ester terminated polyamide (ETPA), polyether polyamine (PEPA) and a mixture thereof, wherein the gellant is 0.05 to 15 wt % based on the weight of the conductive paste.
13. The conductive paste of claim 12 , wherein the inorganic powder comprises one or more glass frits.
14. The conductive paste of claim 12 , where softening point of the gellant is 70 to 120° C.
15. The conductive paste of claim 12 , wherein molecular weight (Mw) of the gellant is 1,000 to 100,000.
16. The conductive paste of claim 12 , wherein weight ratio of the solvent and the gellant (solvent:gellant) is 10:1 to 50:1.
17. The conductive paste of claim 12 , wherein the gellant is 0.05 to 20 parts by weight when the inorganic powder is 100 parts by weight.
18. The conductive paste of claim 12 , wherein the additive comprises a thixotropic agent.
19. A conductive paste comprising:
(i) an inorganic powder comprising at least a conductive powder;
(ii) an organic polymer;
(iii) a solvent; and
(iv) a gellant having a molecular weight of 1,000 to 100,000.