Vibrating device
A vibrating device that is in the form of a rectangular plate having opposed long sides and opposed short sides, and that utilizes an expanding and contracting vibration mode in a direction of the short sides. The vibrating device includes a Si layer made of a degenerate semiconductor, a silicon oxide layer, a piezoelectric layer, and first and second electrodes through which a voltage is applied to the piezoelectric layer. When a total thickness of the Si layer is denoted by T 1 , a total thickness of the silicon oxide layer is denoted by T 2 , and the TCF in the vibrating device when the silicon oxide layer 3 is not provided is denoted by x(ppm/K), T 2 /(T 1 +T 2 ) is within a range of (−0.0003x 2 −0.0256x+0.0008)±0.05.
1. A vibrating device comprising:
a rectangular body having opposed long sides and opposed short sides, and configured to exhibit expanding and contracting vibration in a direction of the short sides,
wherein the rectangular body includes:
a Si layer made of a degenerate semiconductor;
a silicon oxide layer;
a piezoelectric layer; and
first and second electrodes through which a voltage is applied to the piezoelectric layer, and
wherein when a total thickness of the Si layer is denoted by T 1 , a total thickness of the silicon oxide layer is denoted by T 2 , and a temperature coefficient of resonant frequency in the vibrating device when the silicon oxide layer is not provided is denoted by x, T 2 /(T 1 +T 2 ) is within a range of (−0.0003x 2 −0.0256x+0.0008)±0.05.
2. The vibrating device according to claim 1 , wherein the Si layer is doped with an n-type dopant.
3. The vibrating device according to claim 2 , wherein the dopant is phosphorus.
4. The vibrating device according to claim 1 , wherein the silicon oxide layer is on a first principal surface of the Si layer.
5. The vibrating device according to claim 1 , wherein the first electrode is disposed on a first principal surface of the piezoelectric layer, and the second electrode is disposed on a second principal surface of the piezoelectric layer opposite to the first principal surface.
6. The vibrating device according to claim 1 , wherein the Si layer is also the second electrode.
7. The vibrating device according to claim 4 , wherein the silicon oxide layer is a first silicon oxide layer, and the vibrating device further comprises a second silicon oxide layer on a second principal surface of the Si layer opposite the first principal surface.
8. A vibrating device comprising:
a square body configured to exhibit expanding and contracting vibration in a plane parallel to the square body,
wherein the vibrating device includes:
a Si layer made of a degenerate semiconductor;
a silicon oxide layer;
a piezoelectric layer; and
first and second electrodes through which a voltage is applied to the piezoelectric layer, and
wherein when a total thickness of the Si layer is denoted by T 1 , a total thickness of the silicon oxide layer is denoted by T 2 , and a temperature coefficient of resonant frequency in the vibrating device when the silicon oxide layer is not provided is denoted by x, T 2 /(T 1 +T 2 ) is within a range of (−0.0003x 2 −0.0228x+0.0024)±0.05.
9. The vibrating device according to claim 8 , wherein the Si layer is doped with an n-type dopant.
10. The vibrating device according to claim 9 , wherein the dopant is phosphorus.
11. The vibrating device according to claim 8 , wherein the silicon oxide layer is on a first principal surface of the Si layer.
12. The vibrating device according to claim 8 , wherein the first electrode is disposed on a first principal surface of the piezoelectric layer, and the second electrode is disposed on a second principal surface of the piezoelectric layer opposite to the first principal surface.
13. The vibrating device according to claim 8 , wherein the Si layer is also the second electrode.
14. The vibrating device according to claim 11 , wherein the silicon oxide layer is a first silicon oxide layer, and the vibrating device further comprises a second silicon oxide layer on a second principal surface of the Si layer opposite the first principal surface.
15. A vibrating device comprising:
a rectangular body having opposed long sides and opposed short sides, and configured to exhibit expanding and contracting vibration in a direction of the long sides,
wherein the vibrating device includes:
a Si layer made of a degenerate semiconductor;
a silicon oxide layer;
a piezoelectric layer; and
first and second electrodes through which a voltage is applied to the piezoelectric layer, and
wherein when a total thickness of the Si layer is denoted by T 1 , a total thickness of the silicon oxide layer is denoted by T 2 , and a temperature coefficient of resonant frequency in the vibrating device when the silicon oxide layer is not provided is denoted by x, T 2 /(T 1 +T 2 ) is within a range of (−0.0003x 2 −0.0250x+0.0215)±0.05.
16. The vibrating device according to claim 15 , wherein the Si layer is doped with an n-type dopant.
17. The vibrating device according to claim 16 , wherein the dopant is phosphorus.
18. The vibrating device according to claim 15 , wherein the silicon oxide layer is on a first principal surface of the Si layer.
19. The vibrating device according to claim 15 , wherein the first electrode is disposed on a first principal surface of the piezoelectric layer, and the second electrode is disposed on a second principal surface of the piezoelectric layer opposite the first principal surface.
20. The vibrating device according to claim 15 , wherein the Si layer is also the second electrode.