IP Library Granted Patent US 9,926,622
Granted Patent B2
US 9,926,622 · App. 14/939,604 · Granted Mar 27, 2018

Methods for forming pitting resistant carbon coating

Inventors: Osman L. Erylimaz (Plainfield, IL); Harpal Singh (Cuyahoga Falls, OH); Aaron C. Greco (Chicago, IL); Jair G. Ramirez Gonzalez (Naperville, IL); Ali Erdemir (Naperville, IL)
Assignee: UChicago Argonne, LLC
C23C14/0611C01B32/25C23C14/021C23C14/024C23C14/0605C23C14/0635C23C14/3485C23C14/35
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Quick Facts
Patent No.
US 9,926,622
App. No.
14/939,604
Granted
Mar 27, 2018
Kind
B2
Abstract

A method for making a pitting resistant carbon coating that includes a hydrogenated diamond-like coating (“H-DLC”). The H-DLC is relatively soft and elastic. Unlike hard and/or inelastic coatings in the prior art, the present coatings do not exhibit a loss of adhesion (delamination). A bonding layer may be deposited on a metallic substrate and the deposited H-DLC on the bonding layer.

Claims (15)

1. A method of making a pitting resistant carbon coating comprising:

removing organic material from a metallic substrate;

etching a surface of the metallic substrate;

depositing a carbide forming layer on the etched metallic substrate;

exposing the carbide forming layer to methane gas, forming a carbide layer; and

depositing an amorphous hydrogenated diamond-like coating on the carbide layer;

wherein the hydrogenated diamond-like coating has a hardness the range of 2-7 GPa and an elasticity equal to or less than 60 GPa.

2. The method of claim 1 , wherein the metallic substrate is steel.

3. The method of claim 2 , further comprising forming an amorphous carbon tribofilm.

4. The method of claim 2 , wherein the deposited amorphous hydrogenated diamond-like coating has a thickness at least 1/10 th a thickness of the metallic substrate.

5. The method of claim 1 , wherein the hydrogenated diamond-like coating has a hardness the range of 5-6 GPa and an elasticity between 50 and 60 GPa.

6. The method of claim 1 , wherein the hydrogenated diamond-like coating is deposited by a pulsed magnetron sputtering system.

7. The method of claim 6 , wherein the pulsed magnetron deposition uses power supplied to carbon targets in the range of 1000-2000 W and pulsed DC bias of 35 to 50 volts was supplied at 250-350 KHz.

8. The method of claim 7 , wherein the methane was maintained at 8-20 sccm.

9. The method of claim 8 , wherein the deposition by pulsed magnetron uses argon gas mixture maintained 70 sccm as a working gas.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 11, 2017
From: ERYILMAZ, OSMAN L.; GRECO, AARON C.; ERDEMIR, ALI; SINGH, HARPAL; RAMIREZ GONZALEZ, JAIR GIOVANNI
To: UCHICAGO ARGONNE, LLC
Reel/Frame 043830/0557 →
CONFIRMATORY LICENSE Recorded Dec 18, 2015
From: UCHICAGO ARGONNE, LLC
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 037393/0579 →
Continuity (1)
Related Publication 20170137926A1 · May 18, 2017