Semiconductor device and a method of manufacturing the same
To provide a technique capable of positioning of a semiconductor chip and a mounting substrate with high precision by improving visibility of an alignment mark. In a semiconductor chip constituting an LCD driver, a mark is formed in an alignment mark formation region over a semiconductor substrate. The mark is formed in the same layer as that of an uppermost layer wiring (third layer wiring) in an integrated circuit formation region. Then, in the lower layer of the mark and a background region surrounding the mark, patterns are formed. At this time, the pattern P 1 a is formed in the same layer as that of a second layer wiring and the pattern P 1 b is formed in the same layer as that of a first layer wiring. Further, the pattern P 2 is formed in the same layer as that of a gate electrode, and the pattern P 3 is formed in the same layer as that of an element isolation region.
1. A semiconductor device comprising:
(a) a semiconductor substrate including an alignment mark formation region and an integrated circuit formation region;
(b) a MISFET formed over the semiconductor substrate, the MISFET being formed in the integrated circuit formation region;
(c) a first wiring layer formed over the MISFET, the first wiring layer formed in the integrated circuit formation region;
(d) a plurality of first patterns formed over the semiconductor substrate and in the same layer as the first wiring layer, the plurality of first patterns being formed in the alignment mark formation region;
(e) a first interlayer insulating film formed over the semiconductor substrate to cover the first wiring layer and the plurality of first patterns;
(f) a second wiring layer formed over the first interlayer insulating film, the second wiring layer being formed in the integrated circuit formation region; and
(g) an alignment mark formed over the first interlayer insulating film and in the same layer as the second wiring layer, the alignment mark being formed in the alignment mark formation region,
wherein the second wiring layer and the alignment mark are formed of an uppermost layer wiring,
wherein the alignment mark formation region has a mark region where the alignment mark is disposed and a background region surrounding the mark region,
wherein the plurality of first patterns are disposed under the alignment mark so as to arrange in both of the background region and the mark region in plan view, and
wherein the plurality of the first patterns are not connected to any of other wiring layers respectively.
2. A semiconductor device according to claim 1 ,
(h) a further insulating film formed over the semiconductor substrate to cover the second wiring and the alignment mark, the further insulating film having an opening at an upper side of the second wiring layer;
(i) a bump electrode formed over the further insulating film and electrically connected to the second wiring layer via the opening.
3. A semiconductor device according to claim 2 ,
wherein, when mounting the semiconductor device over a glass substrate having an electrode, the alignment mark is used for positioning of the bump electrode to the electrode of the glass substrate.
4. A semiconductor device according to claim 1 , further comprising:
(j) a second wiring layer formed over the MISFET, the second wiring layer formed in the integrated circuit formation region; and
(k) a plurality of second patterns formed over the semiconductor substrate and in the same layer as the second wiring layer, the plurality of second patterns being formed in the alignment mark formation region,
wherein the first wiring layer and the plurality of first patterns are formed over the second interlayer insulating film.
5. A semiconductor device according to claim 4 ,
wherein the second wiring layer and the plurality of second patterns are formed at a wiring layer which is one level lower layer than the first wiring layer and the plurality of first patterns.
6. A semiconductor device according to claim 4 ,
wherein the plurality of first patterns and the plurality of second patterns are arranged so as to be shifted respectively in a plan view.
7. A semiconductor device according to claim 1 ,
wherein the respective first patterns are dot-shaped.
8. A semiconductor device according to claim 1 ,
wherein the MISFET constitutes a part of LCD driver that drives a liquid crystal display.
9. A semiconductor device according to claim 1 ,
wherein the semiconductor substrate has four corners,
wherein the alignment mark is formed in a vicinity of one of the four corners,
wherein a guard ring includes the same layers as the first wiring layer and the second wiring layer,
wherein the guard ring is formed so as to surround the alignment mark formation region and the integrated circuit formation region,
wherein the alignment mark formation region is arranged between the guard ring and the integrated circuit formation region in plan view, and
wherein the integrated circuit formation region is not arranged between the alignment mark formation region and the guard ring in plan view.
10. A semiconductor device according to claim 1 ,
wherein a thickness of the first wiring layer and the plurality of first patterns is smaller than a thickness of the second wiring and the alignment mark.
11. A semiconductor device according to claim 1 ,
wherein the bump electrode includes a gold film.
12. A semiconductor device according to claim 1 ,
wherein a size of the respective plurality of first patterns is smaller than a size of the alignment mark in plan view.
13. A semiconductor device comprising:
(a) a semiconductor substrate including an alignment mark formation region and an integrated circuit formation region;
(b) a MISFET formed over the semiconductor substrate, the MISFET being formed in the integrated circuit formation region;
(c) a first wiring layer formed over the MISFET, the first wiring layer formed in the integrated circuit formation region;
(d) a plurality of first patterns formed over the semiconductor substrate and in the same layer as the first wiring layer, the plurality of first patterns being formed in the alignment mark formation region;
(e) a first interlayer insulating film formed over the semiconductor substrate to cover the first wiring layer and the plurality of first patterns;
(f) a second wiring layer formed over the first interlayer insulating film, the second wiring layer being formed in the integrated circuit formation region; and
(g) an alignment mark formed over the first interlayer insulating film and in the same layer as the second wiring layer, the alignment mark being formed in the alignment mark formation region,
wherein the second wiring layer and the alignment mark are formed of an uppermost layer wiring,
wherein the alignment mark formation region has a mark region where the alignment mark is disposed and a background region surrounding the mark region,
wherein the plurality of first patterns are disposed under the alignment mark so as to arrange in both of the background region and the mark region in plan view, and
wherein the plurality of the patterns are separated from other wiring layers respectively.
14. A semiconductor device according to claim 13 ,
(h) a further insulating film formed over the semiconductor substrate to cover the second wiring and the alignment mark, the further insulating film having an opening at an upper side of the second wiring layer;
(i) a bump electrode formed over the further insulating film and electrically connected to the second wiring layer via the opening.
15. A semiconductor device according to claim 14 ,
wherein, when mounting the semiconductor device over a glass substrate having an electrode, the alignment mark is used for positioning of the bump electrode to the electrode of the glass substrate.
16. A semiconductor device according to claim 13 , further comprising:
(j) a second wiring layer formed over the MISFET, the second wiring layer formed in the integrated circuit formation region; and
(k) a plurality of second patterns formed over the semiconductor substrate and in the same layer as the second wiring layer, the plurality of second patterns being formed in the alignment mark formation region,
wherein the first wiring layer and the plurality of first patterns are formed over the second interlayer insulating film.
17. A semiconductor device according to claim 16 ,
wherein the plurality of first patterns and the plurality of second patterns are arranged so as to be shifted respectively in a plan view.
18. A semiconductor device according to claims 13 ,
wherein the semiconductor substrate has four corners,
wherein the alignment mark is formed in a vicinity of one of the four corners,
wherein a guard ring includes the same layers as the first wiring layer and the second wiring layer,
wherein the guard ring is formed so as to surround the alignment mark formation region and the integrated circuit formation region,
wherein the alignment mark formation region is arranged between the guard ring and the integrated circuit formation region in plan view, and
wherein the integrated circuit formation region is not arranged between the alignment mark formation region and the guard ring in plan view.
19. A semiconductor device according to claim 13 ,
wherein a thickness of the first wiring layer and the plurality of first patterns is smaller than a thickness of the second wiring and the alignment mark.
20. A semiconductor device according to claim 13 ,
wherein a size of the respective plurality of first patterns is smaller than a size of the alignment mark in plan view.