Image sensor and method for manufacturing the same
An image sensor structure and a method for forming the same are provided. The image sensor structure includes a substrate having a front side and a backside and a light-sensing region formed in the substrate. The image sensor structure further includes a front side isolation structure formed at the front side of the substrate and a backside isolation structure formed at the back side of the substrate.
1. An image sensor structure, comprising:
a substrate having a front side and a backside;
a light-sensing region formed in the substrate;
a front side isolation structure formed at the front side of the substrate;
a backside isolation structure formed at the back side of the substrate and surrounding the light-sensing region; and
a storage node formed at the front side of the substrate adjacent to the light-sensing region,
wherein the front side isolation structure is made of a first material and the backside isolation structure is made of a second material different from the first material, and the second material surrounds the light sensing region, and
wherein the front side isolation structure is formed around the light-sensing region and has an opening such that a portion of the light sensing region and the storage node are not separated by the front side isolation structure.
2. The image sensor structure as claimed in claim 1 , further comprising:
a light shielding layer formed at the backside of the substrate.
3. The image sensor structure as claimed in claim 1 , further comprising:
a cap layer formed over the front side of the substrate to cover the light-sensing region.
4. The image sensor structure as claimed in claim 3 , further comprising:
a blocking structure in direct contact with the cap layer and extending into the front side isolation structure.
5. The image sensor structure as claimed in claim 3 , further comprising:
a gate structure formed on the front side of the substrate; and
a storage node formed adjacent to the gate structure,
wherein a portion of the gate structure overlaps with the light-sensing region.
6. The image sensor structure as claimed in claim 1 , wherein the first material is formed above the second material.
7. An image sensor structure, comprising:
a substrate having a front side and a backside;
a light-sensing region formed in the substrate;
a front side isolation structure made of a first material partially surrounding the light-sensing region at the front side of the substrate; and
a backside isolation structure made of a second material fully surrounding the light-sensing region at the backside of the substrate,
wherein the first material is a dielectric material, and the second material is metal, and the first material is in direct contact with the second material.
8. The image sensor structure as claimed in claim 7 , wherein the front side isolation structure has an opening region, such that a portion of the light-sensing region is not surrounding by the front side isolation structure.
9. The image sensor structure as claimed in claim 8 , further comprising:
a storage node formed at the front side of the substrate,
wherein the storage node is formed adjacent to the opening region of the front side isolation structure.
10. The image sensor structure as claimed in claim 8 , further comprising:
a storage node formed at the front side of the substrate, wherein the storage node is not aligned with the opening region of the front side isolation structure.
11. The image sensor structure as claimed in claim 10 , further comprising:
a conductive structure formed over the front side of the substrate,
wherein the storage node and the light-sensing region are connected by the conductive structure.
12. The image sensor structure as claimed in claim 10 , further comprising:
an intermediate region formed in the substrate, wherein the light-sensing region is formed at one side of the intermediate region and the storage node is formed at the other side of the intermediate region.
13. The image sensor structure as claimed in claim 10 , further comprising:
a second photodiode region formed adjacent to the opening region of the front side isolation structure,
wherein the light-sensing region includes a first photodiode region, and the first photodiode region and the second photodiode region are formed at the opposite sides of the opening region of the front side isolation structure.
14. The image sensor structure as claimed in claim 7 , further comprising:
a storage node formed at the front side of the substrate adjacent to the light-sensing region,
wherein the front side isolation structure is formed around the light-sensing region but has an opening so that a portion of the light sensing region and the storage node are not separated by the front side isolation structure.
15. The image sensor structure as claimed in claim 7 , wherein the first material is located above the second material.
16. An image sensor structure, comprising:
a substrate;
a light-sensing region formed in the substrate;
a front side isolation structure made of a first material formed at a front side of the substrate, wherein the first material partially surrounds the light sensing region;
a backside isolation structure made of a second material different from the first material, wherein the second material fully surrounds the light sensing region and is located directly under the first material; and
a storage node formed at the front side of the substrate adjacent to the light-sensing region,
wherein the storage node vertically overlaps the backside isolation structure with respect to the front side of the substrate.
17. The image sensor structure as claimed in claim 16 , wherein the front side isolation structure is formed around the light-sensing region but has an opening so that a portion of the light sensing region and the storage node are not separated by the front side isolation structure.
18. The image sensor structure as claimed in claim 16 , further comprising:
a cap layer formed at the front side of the substrate over the light-sensing region; and
a blocking structure in contact with the cap layer and extending into the front side isolation structure.
19. The image sensor structure as claimed in claim 16 , further comprising:
an interconnect structure formed over the front side of the substrate; and
a color filter layer formed over the back side of the substrate.
20. The image sensor structure as claimed in claim 16 , wherein the first material partially surrounds the light sensing region to have an opening at a side of the light sensing region, and the storage node is formed at the opening of the first material.