Granted Patent
B2
US 9,315,671 · App. 14/942,775 · Granted Apr 19, 2016
Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors
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Abstract
A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.
Claims (3)
1. A composition compound comprising of the formula:
wherein x, y=F, Cl, Br, I,
and R=-Alkyl, -OAlkyl, -SAlkyl, Z=—CR 2 , NR, —SiR 2 , —CR═CR—.
Assignments (2)
CONFIRMATORY LICENSE
Recorded Apr 6, 2016
From: REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 038364/0377 →
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded Jan 7, 2016
From: LIU, YI; HE, BO; PUN, ANDREW
To: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Reel/Frame 037434/0548 →
Continuity (3)
Provisional Application
61981043
· Apr 17, 2014