Semiconductor device
A front surface electrode common to a plurality of unit cells is provided substantially all over an active region of a semiconductor element. A plurality of electrode pads on the front surface electrode are closer to the outer peripheral portion side than the central portion of the active region. Different wires are joined to substantially the center of each electrode pad. The active region is divided into two or more segments so that the segments are aligned along the path of current flowing through the front surface electrode, and unit cells different in conduction ability are disposed respectively in each segment. Unit cells lowest in conduction ability are in the first segment farthest from junctions of the wires and electrode pads, and the unit cells are disposed so that the farther apart from the junctions of the wires and electrode pads, the lower in conduction ability the unit cells are.
1. A semiconductor device, comprising:
a plurality of unit cells provided in a semiconductor substrate, each of the unit cells including an active element through which current flows, the plurality of unit cells including a plurality of first unit cells each having a first conduction ability, a plurality of second unit cells each having a second conduction ability lower than the first conduction ability, and a plurality of third unit cells each having a third conduction ability lower than the first and second conduction abilities;
a front surface electrode, common to the plurality of unit cells, provided on a front surface of and all over the semiconductor substrate;
electrode pads, provided closer to an outer peripheral portion side than a central portion of the semiconductor substrate, which are in contact with the front surface electrode and occupy a smaller proportion of a surface area of the semiconductor substrate than the front surface electrode, the electrode pads being aligned along a first direction in a plan view; and
wires, joined to respective electrode pads at respective junctions thereof, which extract current flowing through the plurality of unit cells to an external location, wherein along a second direction perpendicular to the first direction, the first unit cells, the second unit cells, and the third unit cells are disposed in this order so that the first unit cells are disposed in a vicinity of junctions of the wires and electrode pads, and positions of the third unit cells are farther from the junctions than are positions of the first and second cell units.
2. The semiconductor device according to claim 1 , wherein
the first to third unit cells different in conduction ability are disposed along a path of current flowing through the front surface electrode from the positions apart from the junctions toward the junctions.
3. The semiconductor device according to claim 1 , wherein
the first to third unit cells are disposed so that the farther apart from the junctions, the lower in conduction ability the unit cells are.
4. The semiconductor device according to claim 1 , wherein
the plurality of units are disposed in an active region through which current flows, the active region including first, second and third segments, and
the first unit cells are disposed in the first segment, the second unit cells are disposed in the second segment, and the third unit cells are disposed in the third segment, the first segment, the second segment, and the third segment being aligned along a path of current flowing through the front surface electrode.
5. The semiconductor device according to claim 1 , wherein
each of the first to third unit cells includes an insulated gate structure formed of a metal oxide film semiconductor, and
the first to third conduction abilities of the first to third unit cells are set by adjusting a current density in channels.
6. The semiconductor device according to claim 1 , wherein
the unit cells have trenches provided in stripes extending in a direction along a path of current flowing through the front surface electrode, and each unit cell has a trench gate structure wherein a gate electrode is provided in an inner portion of each trench via a gate insulating film.
7. The semiconductor device according to claim 2 , wherein
the first to third unit cells different in conduction ability are disposed so that the farther apart from the junctions, the lower in conduction ability the unit cells are.
8. The semiconductor device according to claim 2 , wherein
the first to third unit cells different in conduction ability are disposed respectively in each of a plurality of segments aligned along a path of current flowing through the front surface electrode.
9. The semiconductor device according to claim 3 , wherein
the unit cells are disposed respectively in each of a plurality of segments aligned along a path of current flowing through the front surface electrode.
10. The semiconductor device according to claim 7 , wherein
the first to third unit cells are disposed respectively in each of a plurality of segments aligned along a path of current flowing through the front surface electrode.
11. The semiconductor device according to claim 3 , wherein
each of the unit cells include an insulated gate structure formed of a metal oxide film semiconductor, and
the first to third conduction abilities of the first to third unit cells are set by adjusting a current density in channels.
12. The semiconductor device according to claim 4 , wherein
the plurality of unit cells each include an insulated gate structure formed of a metal oxide film semiconductor, and
the first to third conduction abilities of each of the plurality of unit cells are set by adjusting a current density in channels.
13. The semiconductor device according to claim 3 , wherein
the unit cells have trenches provided in stripes extending in a direction along a path of current flowing through the front surface electrode, and each of the unit cells has a trench gate structure wherein a gate electrode is provided in an inner portion of each trench via a gate insulating film.
14. The semiconductor device according to claim 4 , wherein
the plurality of unit cells have trenches provided in stripes extending in a direction along a path of current flowing through the front surface electrode, and have trench gate-structures wherein a gate electrode is provided in an inner portion of each trench via a gate insulating film.
15. The semiconductor device according to claim 5 , wherein
the unit cells have trenches provided in stripes extending in a direction along a path of current flowing through the front surface electrode, and each of the unit cells has a trench gate structure wherein a gate electrode is provided in an inner portion of each trench via a gate insulating film.
16. The semiconductor device of claim 1 , wherein source regions of the plurality of unit cells are disposed in a checkered planar layout.
17. The semiconductor device of claim 1 , wherein source regions in adjacent mesa portions of the plurality of unit cells are disposed so as not to be opposed to each other.
18. The semiconductor device of claim 14 , further comprising
a first region in which a first conductivity type region is selectively disposed in a second conductivity type region in the front surface of the semiconductor substrate in the plan view, and
a second region in which only second conductivity type region is disposed in the front surface of the semiconductor substrate in the plan view, wherein
in the plan view, the first region and the second region are aligned, with sandwiching a corresponding trench gate structure, in a direction perpendicular to the direction of the path of current.