Semiconductor device, solid-state imaging device, and imaging device
A semiconductor device includes a first substrate, a second substrate, a connection part, and an alignment mark. The connection part includes a first electrode which is disposed on the first substrate, a second electrode which is disposed on the second substrate, and a connection bump which connects the first electrode and the second electrode. The alignment mark includes a first mark which is disposed on the first substrate and a second mark which is disposed on the second substrate. A sum of a height of the first mark and a height of the second mark is substantially equal to a sum of a height of the first electrode, a height of the second electrode, and a height of the connection bump.
1. A semiconductor device comprising:
a first substrate;
a second substrate;
a connection part which electrically connects the first substrate and the second substrate; and
an alignment mark which is used in alignment of the first substrate and the second substrate,
wherein the connection part includes:
a first electrode which is disposed on the first substrate;
a second electrode which is disposed on the second substrate; and
a connection bump which is disposed between the first electrode and the second electrode and which electrically connects the first electrode and the second electrode,
wherein the alignment mark includes:
a first mark which is disposed on the first substrate; and
a second mark which is disposed on the second substrate such that the second mark is aligned with respect to the first mark within a predetermined alignment error, the second mark being insulated from the first mark, and
wherein a sum of a height of the first mark and a height of the second mark is substantially equal to a sum of a height of the first electrode, a height of the second electrode, and a height of the connection bump.
2. The semiconductor device according to claim 1 , wherein the height of the second mark is substantially equal to a sum of the height of the second electrode and the height of the connection bump.
3. The semiconductor device according to claim 2 ,
wherein the first mark is an electrode which is disposed on the first substrate, and
wherein the second mark is a bump which is disposed on the second substrate.
4. The semiconductor device according to claim 3 , wherein, when the first substrate and the second substrate are seen in plan view, the first mark surrounds the second mark.
5. The semiconductor device according to claim 3 ,
wherein the bump is connected with the second substrate and a surface of a base electrode which is formed on a surface of the second substrate, and
wherein a width of the base electrode is equal to or smaller than a width of the bump.
6. A solid-state imaging device comprising:
the semiconductor device according to claim 3 ,
wherein the second substrate includes a photoelectric conversion element which is configured to output a signal depending on an amount of incident light, and
wherein the first substrate includes a processing circuit which is configured to process the signal output from the photoelectric conversion element.
7. An imaging device comprising:
the solid-state imaging device according to claim 6 .
8. A solid-state imaging device comprising:
the semiiconductor device according to claim 1 ,
wherein the first substrate includes a photoelectric conversion element which is configured to output a signal depending on an amount of incident light, and
wherein the second substrate includes a processing circuit which is configured to process the signal output from the photoelectric conversion element.
9. An imaging device comprising:
the solid-state imaging device according to claim 8 .