Method for forming magneto-optical films for integrated photonic devices
Methods for forming magneto-optical films for integrated photonic devices and integrated photonic devices incorporating same are described. An optical isolator or any nonreciprocal photonic component for an integrated photonic device can be fabricated by depositing a functional garnet layer directly onto a non-garnet substrate; depositing a seed garnet layer on the functional garnet layer; and after depositing both the functional garnet layer and the seed layer performing an annealing process. Since the seed garnet layer crystalizes faster than the functional garnet layer, crystallization of the functional garnet layer can be accomplished directly on the non-garnet substrate during a single annealing step for the seed layer and the functional garnet layer.
1. A method of fabricating integrated photonic devices comprising:
depositing a functional garnet layer directly onto a non-garnet substrate;
depositing a seed garnet layer on the functional garnet layer, the seed garnet layer having a characteristic in that the seed garnet layer crystalizes faster than the functional garnet layer; and
after depositing both the functional garnet layer and the seed garnet layer, performing an annealing process to crystalize the functional garnet layer.
2. The method of claim 1 , wherein depositing the functional garnet layer and depositing the seed garnet layer each comprises performing physical layer deposition.
3. The method of claim 1 , further comprising:
depositing a second functional garnet layer on the seed garnet layer before performing the annealing process.
4. The method of claim 3 , further comprising:
depositing a second seed garnet layer on the second functional garnet layer before performing the annealing process.
5. The method of claim 1 , further comprising, before performing the annealing process, alternatingly depositing additional layers of functional garnet and seed garnet until a desired functional garnet thickness is attained.
6. The method of claim 1 , further comprising providing the non-garnet substrate.
7. The method of claim 6 , wherein providing the non-garnet substrate comprises providing a waveguide on which the functional garnet layer is deposited.
8. The method of claim 1 , wherein the seed garnet layer comprises a rare-earth garnet; and the functional garnet layer comprises a rare-earth substituted garnet.
9. A photonic integrated circuit (IC) comprising:
a non-garnet substrate; and
an optical integrated component comprising:
a functional garnet layer directly on the non-garnet substrate, and
a seed garnet layer on the functional garnet layer.
10. The photonic IC of claim 9 , wherein the non-garnet substrate comprises a waveguide to which the optical isolator is coupled.
11. The photonic IC of claim 9 , further comprising a laser structure coupled to the optical isolator.
12. The photonic IC of claim 9 , wherein the functional garnet layer comprises a rare-earth substituted garnet and the seed garnet layer comprises a rare-earth garnet.
13. The photonic IC of claim 9 , wherein the functional garnet layer has a thickness between 30 nm and 1 μm.
14. The photonic IC of claim 9 , wherein the non-garnet substrate comprises silicon or quartz.
15. The photonic IC of claim 9 , wherein the non-garnet substrate comprises a III-V semiconductor.
16. The photonic IC of claim 9 , wherein the optical integrated component further comprises an additional functional garnet layer on top of the seed garnet layer.
17. The photonic IC of claim 16 , wherein the optical integrated component further comprises an additional seed garnet layer on top of the additional functional garnet layer.
18. The photonic IC of claim 9 , further comprising one or more components selected from the group consisting of a laser, a waveguide, a photodetector, a filter, an amplifier, a splitter, a coupler, and an optical modulator.