Method for manufacturing a semiconductor product wafer
View Patent ↗Improved methods for manufacturing semiconductor product wafer with the additional use of non-product masks are described. According to certain aspects of the invention, an evaluation wafer is first manufactured by utilizing at least one non-product mask to process one or more layer(s) on the evaluation wafer, and subsequently utilizing at least one unaltered product mask to process an evaluation-region-of-interest on the evaluation wafer. The evaluation-region-of-interest is evaluated by measuring the state of one or more feature(s) in the evaluation-region-of-interest using voltage contrast inspection (VCi). The measurements are then used to identify failures in the evaluation-region-of-interest. In response to identifying a failure in the evaluation-region-of-interest, the manufacturing process is improved by modifying at least one parameter associated with at least one processing step and manufacturing product wafers utilizing the at least one processing step(s) with the at least one modified parameter(s).
1. A method for manufacturing a semiconductor product wafer, said product wafer defined by a series of product masks employed in a series of mask-enabled processing steps, said manufacturing method comprising at least the following steps:
(i) manufacturing an evaluation wafer by:
(a) utilizing unaltered product mask(s) to process layer(s) on the evaluation wafer up to, and including, an evaluation-layer-of-interest; and,
(b) subsequently utilizing at least one non-product mask to produce e-beam pads on the evaluation wafer and connect them to features in the evaluation-layer-of-interest;
(ii) evaluating the evaluation-layer-of-interest by:
(a) measuring the state of one or more e-beam pads using voltage contrast inspection (VCi) with a beam spot size matched to the e-beam pads;
(b) using measurement(s) from (ii) (a) to identify failures in the evaluation-layer-of-interest, including at least some failures that would be unobservable by VCi if directly scanned in the evaluation-layer-of-interest with the same beam spot size used to measure the state(s) of the e-beam pad(s);
(iii) in response to step (ii)(b), improving the manufacturing process by:
(a) modifying at least one parameter associated with at least one processing step; and,
(iv) manufacturing product wafers utilizing the at least one processing step(s) with the at least one modified parameter(s).
2. The method of claim 1 , wherein measuring the state of one or more e-beam pads comprises determining whether the pads/features are charged or discharged.
3. The method of claim 1 , wherein measuring the state of one or more e-beam pads comprises determining whether the pads/features appear as bright or dark on VCi.
4. The method of claim 1 , wherein measuring the state of one or more e-beam pads comprises scanning at a low resolution to determine whether at least one of the pads is charged.
5. The method of claim 1 , wherein measuring the state of one or more e-beam pads comprises inferring leakage or resistance to ground from the measured charge/discharge state of the pads/features.
6. The method of claim 1 , wherein measuring the state of one or more e-beam pads comprises inferring leakage or resistance to between pads/features by comparing the measured charge/discharge state of the pads/features.
7. The method of claim 1 , wherein measuring the state of one or more e-beam pads comprises determining a non-binary (greyscale) value indicative of the measured charge or brightness of the pads/features.
8. A method for manufacturing a semiconductor product wafer, said product wafer defined by a series of product masks employed in a series of mask-enabled processing steps, said manufacturing method comprising at least the following steps:
(i) manufacturing an evaluation wafer by:
(a) utilizing unaltered product mask(s) to process layer(s) on the evaluation wafer up to, and including, an evaluation-layer-of-interest; and,
(b) subsequently utilizing at least one non-product mask to produce at least a billion e-beam pads on the evaluation wafer and connect them to features in the evaluation-layer-of-interest;
(ii) evaluating the evaluation-layer-of-interest by:
(a) measuring the state of at least a billion of the e-beam pads using voltage contrast inspection (VCi) with a beam spot size/shape matched to the size/shape of the e-beam pads;
(b) using measurement(s) from (ii) (a) to identify failures in the evaluation-layer-of-interest;
(iii) in response to step (ii)(b), improving the manufacturing process by:
(a) modifying at least one parameter associated with at least one processing step; and,
(iv) manufacturing product wafers utilizing the at least one processing step(s) with the at least one modified parameter(s).
9. A method for manufacturing a semiconductor product wafer, said product wafer defined by a series of product masks employed in a series of mask-enabled processing steps, said manufacturing method comprising at least the following steps:
(i) manufacturing an evaluation wafer by:
(a) utilizing at least one non-product mask to process one or more layer(s) on the evaluation wafer;
(b) subsequently utilizing at least one unaltered product mask to process an evaluation-region-of-interest on the evaluation wafer; and,
(c) subsequently utilizing at least one non-product mask to process e-beam pads on the evaluation wafer and connect them to features in the evaluation-region-of-interest;
(ii) evaluating the evaluation-region-of-interest by:
(a) measuring the state of one or more e-beam pads using voltage contrast inspection;
(b) using measurement(s) from (ii) (a) to identify failures in the evaluation-region-of-interest;
(iii) in response to step (ii)(b), improving the manufacturing process by:
(a) modifying at least one parameter associated with at least one processing step; and,
(iv) manufacturing product wafers utilizing the at least one processing step(s) with the at least one modified parameter(s).
10. A method for manufacturing a semiconductor product wafer, said product wafer defined by a series of product masks employed in a series of mask-enabled processing steps, said manufacturing method comprising at least the following steps:
(i) manufacturing an evaluation wafer by:
(a) utilizing at least one non-product mask to process one or more layer(s) on the evaluation wafer;
(b) subsequently utilizing at least one unaltered product mask to process an evaluation-region-of-interest on the evaluation wafer; and,
(c) subsequently utilizing at least one non-product mask to process test pads on the evaluation wafer and connect them to features in the evaluation-region-of-interest;
(ii) evaluating the evaluation-region-of-interest by:
(a) measuring the state of one or more test pads;
(b) using measurement(s) from (ii) (a) to identify failures in the evaluation-region-of-interest;
(iii) in response to step (ii)(b), improving the manufacturing process by:
(a) modifying at least one parameter associated with at least one processing step; and,
(iv) manufacturing product wafers utilizing the at least one processing step(s) with the at least one modified parameter(s).