Multi-state configuration RAM cell
A multi-state static RAM cell includes N NOR gates. Each NOR gate has N−1 inputs and one output. The output of each NOR gate is coupled to a different bit line. Each NOR gate has its inputs connected to the outputs of each of the other NOR gates.
1. A multi-state static RAM cell comprising:
N NOR gates, each of the N NOR gates having N−1 inputs and one output, where N is an integer greater than 2;
N bit lines;
wherein each input of each of the N NOR gates is directly connected to the output of a different one of the other N NOR gates.
2. The multi-state static RAM cell of claim 1 further comprising:
a word line; and
N address transistors, each address transistor having a drain, a source, and a gate, the drain of each address transistor coupled to the output of a different one of the NOR gates, the source of each address transistor coupled to a different one of the bit lines, and the gates of all of the address transistors coupled together to the word line.
3. The multi-state static RAM cell of claim 2 wherein the address transistors are sized to be large enough to overpower transistors used to form the NOR gates.
4. A multi-state static RAM cell comprising:
first, second, third, and fourth NOR gates, each NOR gate having three inputs and one output;
first, second, third, and fourth bit lines;
wherein the output of the first NOR gate is coupled to the first bit line and to the inputs of the second, third, and fourth NOR gates, the output of the second NOR gate is coupled to the second bit line and to the inputs of the first, third, and fourth NOR gates, the output of the third NOR gate is coupled to the third bit line and to the inputs of the first, second, and fourth NOR gates, and the output of the fourth NOR gate is coupled to the fourth bit line and to the inputs of the first, second, and third NOR gates.
5. The multi-state static RAM cell of claim 4 further comprising:
a word line; and first, second, third, and fourth address transistors, each address transistor having a drain, a source, and a gate, the drain of the first address transistor coupled to the output of the first NOR gate, the drain of the second address transistor coupled to the output of the second NOR gate, the drain of the third address transistor coupled to the output of the third NOR gate, the drain of the fourth address transistor coupled to the output of the fourth NOR gate, the source of the first address transistor coupled to the first bit line, the source of the second address transistor coupled to the second bit line, the source of the third address transistor coupled to the third bit line, the source of the fourth address transistor coupled to the fourth bit line, and the gates of all of the first, second, third, and fourth address transistors coupled together to the word line.
6. The multi-state static RAM cell of claim 5 wherein the first, second, third, and fourth address transistors are sized to be large enough to overpower transistors used to form the NOR gates.
7. A method for configuring a multi-state static RAM cell comprising:
providing N NOR gates, N being an integer greater than 2, each NOR gate having N−1 inputs and an output;
cross coupling the NOR gates; and
forcing a logic high level at the output of only one of the N NOR gates which causes a logic low level at the output of each of the other ones of the N NOR gates.
8. The method of claim 7 , further comprising:
providing address transistors, each address transistor coupled between the output of a different one of the NOR gates and a different bit line, each address transistor having a control element coupled to a word line; and
wherein forcing a logic high level at the output of only one of the NOR gates while forcing a logic low level at the outputs of all of the other NOR gates comprises asserting a logic high level on only one of the bit lines, asserting a logic low level on all of the other bit lines, and asserting a write signal on the word line.