Spirofluorene derivative, material for light-emitting element, light-emitting element, light-emitting device, and electronic device
It is an object of the present invention to provide a material having a high Tg and a wide energy gap. The present invention provides a spirofluorene derivative represented by General Formula 1. (In the formula, R 1 is any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, or a group represented by General Formula 2. Each of R 2 and R 3 is either hydrogen or an alkyl group having 1 to 4 carbon atoms and may be identical or different. R 4 is an aryl group having 6 to 15 carbon atoms. Each of R 5 and R 6 is any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 15 carbon atoms and may be identical or different.)
1. A semiconductor device comprising:
an element comprising a material having a molecular weight 698,
wherein the material having the molecular weight 698 consists of a first part of a molecular weight 532 and a second part of a molecular weight 166, and
wherein the first part is bonded to the second part by a single bond.
2. The semiconductor device according to claim 1 , wherein the element is provided over a glass substrate.
3. The semiconductor device according to claim 1 , wherein the element is provided over an insulating film comprising silicon nitride.
4. The semiconductor device according to claim 1 , wherein the material having the molecular weight 698 is represented by Structural Formula 107,
5. The semiconductor device according to claim 2 , wherein the material having the molecular weight 698 is represented by Structural Formula 108,
6. A semiconductor device comprising:
an element comprising a first electrode, a second electrode over the first electrode, a layer comprising a material between the first electrode and the second electrode,
wherein the material has a molecular weight 698,
wherein the material consists of a first part of a molecular weight 532 and a second part of a molecular weight 166, and
wherein the first part is bonded to the second part by a single bond.
7. The semiconductor device according to claim 6 , wherein the element is provided over a glass substrate.
8. The semiconductor device according to claim 6 , wherein the element is provided over an insulating film comprising silicon nitride.
9. The semiconductor device according to claim 6 , wherein the first electrode is an anode and the second electrode is a cathode.
10. The semiconductor device according to claim 6 , wherein the first electrode comprises at least one of ITO and silver.
11. The semiconductor device according to claim 6 , wherein the second electrode comprises at least one of magnesium and silver.
12. The semiconductor device according to claim 6 , wherein the material is represented by Structural Formula 107,
13. The semiconductor device according to claim 6 , wherein the material is represented by Structural Formula 108,
14. A semiconductor device comprising:
a transistor over a substrate;
an element electrically connected to the transistor, the element comprising a first electrode, a second electrode over the first electrode, and a layer comprising a material interposed therebetween; and
wherein the material has a molecular weight 698,
wherein the material consists of a first part of a molecular weight 532 and a second part of a molecular weight 166, and
wherein the first part is bonded to the second part by a single bond.
15. The semiconductor device according to claim 14 , wherein the substrate is a glass substrate.
16. The semiconductor device according to claim 14 , wherein the transistor comprises a crystalline semiconductor film.
17. The semiconductor device according to claim 14 , wherein the transistor comprises a gate electrode comprising molybdenum.
18. The semiconductor device according to claim 14 , wherein the element is provided over an insulating film comprising silicon nitride.
19. The semiconductor device according to claim 14 , wherein the first electrode is an anode and the second electrode is a cathode.
20. The semiconductor device according to claim 14 , wherein the first electrode comprises at least one of ITO and silver.
21. The semiconductor device according to claim 14 , wherein the second electrode comprises at least one of magnesium and silver.
22. The semiconductor device according to claim 14 , wherein the material is represented by Structural Formula 107,
23. The semiconductor device according to claim 14 , wherein the material is represented by Structural Formula 108,