Imaging device and electronic apparatus incorporating a phase difference pixel
A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.
1. An imaging device comprising:
a phase difference pixel including:
a microlens;
a first photoelectric conversion structure configured to receive light through the microlens;
a second photoelectric conversion structure configured to receive light through the microlens;
a first transfer transistor corresponding to the first photoelectric conversion structure; and
a second transfer transistor corresponding to the second photoelectric conversion structure,
wherein an insulated light shielding film is embedded in a region between the first photoelectric conversion structure and the second photoelectric conversion structure, and
wherein the region the insulated light shielding film is embedded in is shifted according to a pupil position.
2. The imaging device according to claim 1 ,
wherein the microlens overlaps the first and second photoelectric conversion structures.
3. The imaging device according to claim 1 ,
wherein a white filter is disposed corresponding to the phase difference pixel.
4. The imaging device according to claim 1 ,
wherein the phase difference pixel further includes a third photoelectric conversion structure and a fourth photoelectric conversion structure.
5. An imaging device comprising:
a phase difference pixel including:
a microlens;
a first photoelectric conversion structure configured to receive light through the microlens;
a second photoelectric conversion structure configured to receive light through the microlens; and
a metal film,
wherein the metal film is embedded in a region between the first photoelectric conversion structure and the second photoelectric conversion structure, and
wherein the region the metal film is embedded in is shifted according to a pupil position.
6. The imaging device according to claim 5 ,
wherein the microlens overlaps the first and second photoelectric conversion structures.
7. The imaging device according to claim 5 ,
wherein a white filter is disposed corresponding to the phase difference pixel.
8. The imaging device according to claim 5 ,
wherein the phase difference pixel further includes a third photoelectric conversion structure and a fourth photoelectric conversion structure.
9. An imaging device comprising:
a pixel array unit including a first pixel; and
a column processing unit, wherein the first pixel includes:
a microlens;
a first transfer transistor;
a second transfer transistor;
a floating diffusion region;
a first photoelectric conversion element configured to receive light through the microlens and coupled to the floating diffusion region via the first transfer transistor;
a second photoelectric conversion element configured to receive light through the microlens and coupled to the floating diffusion region via the second transfer transistor; and
a trench region disposed between the first photoelectric conversion element and the second photoelectric conversion element, wherein an insulated light shield is embedded in the trench region,
wherein the first pixel is arranged at a distance from a center of the pixel array unit, and
wherein the trench region is shifted from a center of the first pixel according to a pupil position.
10. The imaging device according to claim 9 , further comprising a fixed charge film formed on the first photoelectric conversion element and the second photoelectric conversion element,
wherein the fixed charge film is embedded in the trench region.
11. The imaging device according to claim 9 , further comprising an insulating film formed on the first photoelectric conversion element and the second photoelectric conversion element,
wherein the insulating film is embedded in the trench region.
12. The imaging device according to claim 10 , further comprising a metal material forming an engraved light shielding film and a barrier metal formed between the engraved light shielding film and the fixed charge film in the trench region.
13. The imaging device according to claim 9 , wherein the trench region of the first pixel is formed into a “cross” shape in a plan view.
14. The imaging device according to claim 9 , wherein the trench region of the first pixel is formed into a “square with a cross in the center” shape in a plan view.
15. The imaging device according to claim 9 , wherein the pixel array unit further comprises a second pixel adjacent to the first pixel, and
wherein a trench region is disposed between the first pixel and the second pixel.
16. The imaging device according to claim 15 , wherein the second pixel does not include a trench region.
17. The imaging device according to claim 9 , wherein a light receiving area of the second photoelectric conversion element is larger than a light receiving area of the first photoelectric conversion element in the first pixel.