SiGe fins formed on a substrate
A semiconductor structure formed based on selectively forming a silicon-germanium (SiGe) layer on a substrate; forming at least one fin with a first width from the SiGe layer; forming at least one other fin with a second width from the substrate by etching the substrate to form the at least one other fin with the second width; and condensing the at least one fin with the first width and the at least one other fin with the second width by oxidizing the at least one fin with the first width and the at least one other fin with the second width by removing a portion of silicon (Si) from the at least one fin with the first width and the at least one other fin with the second width.
1. A method, comprising:
selectively forming a silicon-germanium (SiGe) layer on a substrate;
forming at least one SiGe fin with a first width from the SiGe layer;
forming at least one Si fin with a second width from an upper portion of the substrate;
oxidizing the at least one SiGe fin with the first width, the at least one Si fin with the second width and a surface of the substrate below the at least one Si fin, wherein the first width of the at least one SiGe fin is condensed in width to a target width, the at least one Si fin is completely oxidized forming an oxide layer between the at least one SiGe fin and the substrate, the oxidizing resulting in a higher percentage of Ge in the at least one SiGe fin with the target width than a percentage of Ge in the SiGe layer, the target width is less than the second width, and the second width is less than the first width; and
selectively removing the oxide layer from side surfaces of the at least one SiGe fin.
2. The method of claim 1 , further comprising:
depositing a nitride liner on a surface of a remaining portion of the oxide layer; and
depositing a flowable oxide layer on the nitride layer,
wherein forming the SiGe layer comprises epitaxially growing the SiGe layer on a top surface of the substrate.
3. The method of claim 1 , wherein forming the at least one SiGe fin with a first width comprises:
forming a masking layer on a top surface of the SiGe layer; and
etching the at least one SiGe fin with the first width.
4. The method of claim 3 , further comprising forming a spacer layer on the at least one SiGe fin with the first width.
5. The method of claim 4 , wherein forming the at least one Si fin with the second width comprises:
etching the substrate to form the at least one Si fin with the second width; and
selectively removing the spacer layer from the at least one SiGe fin with the first width.
6. The method of claim 1 , wherein oxidizing comprises removing a portion of Si from the at least one SiGe fin with the first width and the at least one Si fin with the second width.
7. The method of claim 6 , wherein oxidizing the at least one Si fin with the second width creates an oxide layer isolating the at least one SiGe fin with the target width from the substrate.
8. The method of claim 6 , wherein a height of the at least one SiGe fin with the target width is reduced after oxidizing.
9. The method of claim 1 , wherein:
the at least one Si fin is formed directly below the at least on SiGe fin; and
the oxidizing results without a need for employing a punchthrough stopping region under the at least one SiGe fin to suppress source/drain punchthrough.