Transparent conducting oxide for photovoltaic devices
One embodiment of the present invention provides a solar cell. The solar cell includes a Si base layer, a passivation layer situated above the Si base layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a first transparent-conducting-oxide (TCO) layer situated above the heavily doped a-Si layer, a back-side electrode situated below the Si base layer, and a front-side electrode situated above the first TCO layer. The first TCO layer comprises at least one of: GaInO, GaInSnO, ZnInO, and ZnInSnO.
1. A photovoltaic structure, comprising:
a Si base layer;
a p-type doped amorphous Si layer positioned on a first side of the Si base layer;
an n-type doped semiconductor layer positioned on a second side of the Si base layer;
a first transparent-conductive-oxide layer positioned on and in direct contact with the p-type doped amorphous Si layer, wherein the first transparent-conductive-oxide layer has a work function that is greater than 5.7 eV and less than to 6.1 eV, thereby reducing potential barriers for carriers at an interface between the p-type doped amorphous Si layer and the first transparent-conductive-oxide layer; and
a second transparent-conductive-oxide layer positioned on and in direct contact with the n-type doped semiconductor layer, wherein the second transparent-conductive-oxide layer has a work function that is lower than the work function of the first transparent-conductive-oxide layer.
2. The photovoltaic structure of claim 1 , further comprising a first metallic grid positioned on the first transparent-conductive-oxide layer, wherein the first metallic grid comprises an electroplated layer that includes Cu.
3. The photovoltaic structure of claim 1 , further comprising a metallic grid positioned on the second transparent-conductive-oxide layer, wherein the metallic grid comprises an electroplated layer that includes Cu.
4. The photovoltaic structure of claim 1 , wherein the Si base layer includes a crystalline-Si substrate or an epitaxially formed crystalline-Si thin film.
5. The photovoltaic structure of claim 1 , further comprising at least one of:
a first passivation layer positioned between the Si base layer and the p-type doped amorphous Si layer; and
a second passivation layer positioned between the Si base layer and the p-type doped amorphous Si layer.
6. The photovoltaic structure of claim 5 , wherein the first passivation layer and the second passivation layer include at least one of: undoped amorphous Si and SiO x .
7. The photovoltaic structure of claim 1 , wherein the p-type doped amorphous Si layer comprises amorphous Si or amorphous Si containing carbon, and wherein the p-type doped amorphous Si layer has a doping concentration between 1×10 17 /cm 3 and 5×10 20 /cm 3 .
8. The photovoltaic structure of claim 1 , further comprising a third transparent-conductive-oxide layer positioned on the first transparent-conductive-oxide layer, wherein the third transparent-conductive-oxide is selected from a group consisting of: indium tin oxide (ITO), tin-oxide (SnO x ), aluminum doped zinc-oxide (ZnO:Al), Ga doped zinc-oxide (ZnO:Ga), and any combination thereof.
9. The photovoltaic structure of claim 1 , wherein the second transparent-conductive-oxide layer comprises indium tin oxide (ITO).