Light emitting device
A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.
1. A light emitting device, comprising:
a substrate;
a first light emitting cell disposed on the substrate and a second light emitting cell disposed on the substrate, wherein the first and second light emitting cells comprise:
a first semiconductor layer and a second semiconductor layer;
an active layer disposed between the first and the second semiconductors layers; and
a first inclined surface;
a first conductive material disposed on the second semiconductor layer of the second light emitting cell;
a first insulation layer that overlaps the first conductive material and the first and second light emitting cells;
a second conductive material that overlaps the first insulation layer and electrically connects the first light emitting cell and the second light emitting cell; and
a second insulation layer that overlaps the second conductive material,
wherein both the first insulation layer and the second insulation layer comprise a light transmitting material; and
wherein the first inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane of the substrate.
2. The light emitting device of claim 1 , wherein the first conductive material comprises a transparent electrode disposed on the second semiconductor layer of the second light emitting cell.
3. The light emitting device of claim 2 , wherein the first insulation layer comprises a first via hole exposing the transparent electrode.
4. The light emitting device of claim 3 , wherein:
the first insulation layer is disposed directly on the first semiconductor layers of the first and second light emitting cells; and
the first insulation layer comprises a second via hole exposing the first semiconductor layer of the first light emitting cell.
5. The light emitting device of claim 4 , wherein the second conductive material comprises:
an electrode pad disposed on the first semiconductor layer of the first light emitting cell through the second via hole; and
a wire connecting the first semiconductor layer of the first light emitting cell to the transparent electrode through the first via hole.
6. The light emitting device of claim 2 , wherein the transparent electrode comprise at least one of indium tin oxide (ITO), nickel (Ni), or Gold (Au).
7. The light emitting device of claim 1 , wherein:
the first inclined surface comprises the second semiconductor layer and the active layer,
the first and second light emitting cells further comprise a second inclined surface comprising the second semiconductor layer and the active layer; and
the second inclined surface has a slope of approximately 20° to approximately 80° from the horizontal plane of the substrate.