Memory device
According to one embodiment, a memory device includes a first conductive layer, a second conductive layer, a first insulating layer and a first layer. The first conductive layer includes a first metal capable of forming a compound with silicon. The second conductive layer includes at least one selected from a group consisting of tungsten, molybdenum, platinum, tungsten nitride, molybdenum nitride, and titanium nitride. The first insulating layer is provided between the first conductive layer and the second conductive layer. The first layer is provided between the first insulating layer and the second conductive layer. The first layer includes silicon.
1. A memory device, comprising:
a first conductive layer comprising a first metal comprising at least one selected from the group consisting of nickel and cobalt;
a second conductive layer comprising at least one selected from a group consisting of tungsten, molybdenum, platinum, tungsten nitride, molybdenum nitride, titanium nitride, tantalum and tantalum nitride;
a first insulating layer provided between the first conductive layer and the second conductive layer and having a thickness of 1 nm to 10 nm; and
a first layer provided between the first insulating layer and the second conductive layer,
wherein
the first layer comprises silicon,
the first layer includes a first region and a second region, the second region being positioned between the first region and the second conductive layer,
a first concentration of the first metal in the first region is higher than a second concentration of the first metal in the second region, and
the first metal is present in the first insulating layer, and the concentration of the first metal in the first insulating layer is lower than the first concentration.
2. The device according to claim 1 , wherein the first conductive layer comprises a compound of the first metal and silicon.
3. The device according to claim 1 , wherein the first layer comprises at least one selected from a group consisting of silicon, silicon oxide, silicon nitride, and silicon oxynitride.
4. The device according to claim 1 , wherein the first insulating layer comprises at least one selected from a group consisting of hafnium oxide, zirconium oxide, titanium oxide and a combination thereof.
5. The device according to claim 1 , further comprising:
a first wiring layer extending in a first direction; and
a second wiring layer extending in a second direction,
wherein
the first direction crosses a third direction from the second conductive layer toward the first conductive layer,
the second direction crosses the third direction,
the first conductive layer is electrically connected to the first wiring layer, and
the second conductive layer is electrically connected to the second wiring layer.
6. The device according to claim 5 , wherein
the first wiring layer comprises tungsten, and
the second wiring layer comprises tungsten.
7. The device according to claim 1 , further comprising:
a third conductive layer comprising the first metal, the second conductive layer provided between the first conductive layer and the third conductive layer;
a second insulating layer provided between the second conductive layer and the third conductive layer; and
a second layer provided between the second conductive layer and the second insulating layer, wherein the second layer comprises silicon.
8. The device according to claim 7 , further comprising:
a first wiring layer extending in a first direction;
a second wiring layer extending in a second direction; and
a third wiring layer extending in a third direction,
wherein
the first direction crosses a fourth direction from the second conductive layer toward the first conductive layer,
the second direction crosses the fourth direction,
the third direction crosses the fourth direction,
the first conductive layer is electrically connected to the first wiring layer,
the second conductive layer is electrically connected to the second wiring layer, and
the third conductive layer is electrically connected to the third wiring layer.
9. The device according to claim 1 , further comprising:
a third conductive layer comprising at least one selected from a group consisting of tungsten, molybdenum, platinum, tungsten nitride, molybdenum nitride, titanium nitride, tantalum, and tantalum nitride;
a second layer provided between the first conductive layer and the third conductive layer, wherein the second layer comprises silicon; and
a second insulating layer provided between the first conductive layer and the second layer.
10. The device according to claim 9 , further comprising:
a first wiring layer extending in a first direction;
a second wiring layer extending in a second direction; and
a third wiring layer extending in a third direction,
wherein
the first direction crosses a fourth direction from the second conductive layer toward the first conductive layer,
the second direction crosses the fourth direction,
the third direction crosses the fourth direction,
the first wiring layer is electrically connected to the third conductive layer,
the second wiring layer is electrically connected to the first conductive layer, and
the third wiring layer is electrically connected to the second conductive layer.
11. The device according to claim 7 , wherein the third conductive layer comprises a compound of the first metal and silicon.
12. The device according to claim 7 , wherein the second layer comprises at least one selected from a group consisting of silicon, silicon oxide, silicon nitride and silicon oxynitride.
13. The device according to claim 7 , wherein the second insulating layer comprises at least one selected from a group consisting of hafnium oxide, zirconium oxide, titanium oxide, and a combination thereof.
14. The device according to claim 1 , further comprising a control circuit configured to apply a first potential to the first conductive layer to change electrical resistance between the second conductive layer and the first conductive layer from a high-resistance state to a low-resistance state, wherein the first potential is positive relative to the second conductive layer.
15. The device according to claim 14 , wherein
the control circuit applies a second potential to the first conductive layer to detect the electrical resistance between the second conductive layer and the first conductive layer, and
the second potential is positive relative to the second conductive layer and an absolute value of the second potential is smaller than an absolute value of the first potential.
16. The device according to claim 1 , wherein the first insulating layer contacts the first conductive layer.
17. The device according to claim 1 , wherein the first layer contacts the first insulating layer.
18. The device according to claim 1 , wherein the second conductive layer contacts the first layer.
19. The device according to claim 6 , wherein
the first conductive layer contacts the first wiring layer, and
the second conductive layer contacts the second wiring layer.
20. The device according to claim 1 , wherein the first metal comprises nickel.
21. The device according to claim 1 , wherein the first layer comprises a conductive filament composed of the first metal and Si atoms.
22. The device according to claim 1 , wherein the first layer comprises a bonding of silicon and the first metal.