Room temperature metal direct bonding
View Patent ↗A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.
1. A method of bonding substrates, comprising:
providing a first substrate having a first non-metallic region proximate to a first plurality of metallic pads;
providing a second substrate having a second non-metallic region proximate to a second plurality of metallic pads;
directly contacting the first non-metallic region with the second non-metallic region, wherein a first pad of the first plurality of metallic pads is spaced from a second pad of the second plurality of metallic pads by a gap after directly contacting the first non-metallic region with the second non-metallic region;
non-adhesively bonding the first non-metallic region to the second non-metallic region along an interface without an adhesive and without application of external pressure; and
after directly contacting the first non-metallic region with the second non-metallic region, directly contacting the first pad with the second pad to form a contact between the first pad and the second pad, the interface between the first non-metallic region and the second non-metallic region extending substantially to the contact.
2. The method of claim 1 , wherein directly contacting the first pad with the second pad comprises heating the first and second substrates in a range of about 100-250° C.
3. The method of claim 1 , wherein directly contacting the first non-metallic region with the second non-metallic region and non-adhesively bonding is conducted at room temperature.
4. The method of claim 1 , wherein directly contacting the first pad with the second pad comprises heating the first pad and the second pad to cause at least portions of the first pad and the second pad to reflow.
5. The method of claim 1 , further comprising disposing the first pad in a first recess formed in an outer surface of the first substrate before directly contacting the first and second non-metallic regions.
6. The method of claim 5 , further comprising disposing the second pad in a second recess formed in an outer surface of the second substrate before directly contacting the first and second non-metallic regions.
7. The method of claim 5 , further comprising disposing the second pad as a protrusion on an outer surface of the second substrate before directly contacting the first and second non-metallic regions.
8. The method of claim 1 , wherein non-adhesively bonding comprises bonding the first non-metallic region to the second non-metallic region at room temperature.
9. The method of claim 1 , wherein at least one of the first and second non-metallic regions comprises a silicon oxide layer.
10. The method of claim 1 , further comprising exposing at least one of the first and second non-metallic regions to a plasma process.
11. The method of claim 10 , further comprising exposing at least one of the first and second non-metallic regions to a plasma comprising nitrogen.
12. The method of claim 1 , further comprising exposing at least one of the first and second non-metallic regions to a nitrogen-containing solution.
13. The method of claim 1 , further comprising polishing at least one of the first and second non-metallic regions prior to directly contacting.
14. The method of claim 13 , wherein polishing comprises polishing at least one of the first and second non-metallic regions to a surface roughness less than 15 angstroms.
15. The method of claim 13 , further comprising etching at least one of the first and second non-metallic regions.