Module fabrication of solar cells with low resistivity electrodes
One embodiment of the present invention provides a solar module. The solar module includes a front-side cover, a back-side cover, and a plurality of solar cells situated between the front- and back-side covers. A respective solar cell includes a multi-layer semiconductor structure, a front-side electrode situated above the multi-layer semiconductor structure, and a back-side electrode situated below the multi-layer semiconductor structure. Each of the front-side and the back-side electrodes comprises a metal grid. A respective metal grid comprises a plurality of finger lines and a single busbar coupled to the finger lines. The single busbar is configured to collect current from the finger lines.
1. A solar cell, comprising:
a multi-layer semiconductor structure;
a first electrode positioned on a first side of the multi-layer semiconductor structure; and
a second electrode positioned on a second side of the multi-layer semiconductor structure;
wherein the first side of the multi-layer semiconductor structure has no more than one edge substantially covered by a first busbar that is part of the first electrode; and
wherein the second side of the multi-layer semiconductor structure has an opposite edge substantially covered by a second busbar that is part of the second electrode.
2. The solar cell of claim 1 , wherein the first electrode comprises a number of finger lines.
3. The solar cell of claim 1 , wherein the second electrode is continuous.
4. The solar cell of claim 1 , wherein a respective electrode comprises an electroplated layer.
5. The solar cell of claim 4 , wherein the electroplated layer comprises Cu.
6. The solar cell of claim 4 , wherein the electroplated layer is coated with Ag or Sn.
7. The solar cell of claim 1 , wherein a respective electrode comprises a seed layer formed with a physical vapor deposition technique.
8. The solar cell of claim 7 , wherein the seed layer comprises Cu or Ni.
9. The solar cell of claim 1 , wherein a width of a respective busbar is between 0.5 and 3 mm.
10. A solar module, comprising:
a first cover;
a second cover; and
a plurality of solar cells positioned between the first and second covers, wherein a respective solar cell comprises:
a multi-layer semiconductor structure;
a first electrode positioned on a first side of the multi-layer semiconductor structure; and
a second electrode positioned on a second side of the multi-layer semiconductor structure;
wherein the first side of the multi-layer semiconductor structure has no more than one edge substantially covered by a first busbar that is part of the first electrode; and
wherein the second side of the multi-layer semiconductor structure has an opposite edge substantially covered by a second busbar that is part of the second electrode.
11. The solar module of claim 10 , wherein two adjacent solar cells are coupled together by electrically connecting the busbar on a back surface of one of the two adjacent solar cells with the busbar on a front surface of the other one of the two adjacent solar cells.
12. The solar module of claim 10 , wherein two adjacent solar cells are coupled together by electrically connecting a busbar at an edge of a solar cell and a busbar at an adjacent edge of an adjacent solar cell.
13. The solar module of claim 12 , wherein a length of the electrical connection is substantially similar to a length of the first busbar.
14. The solar module of claim 10 , wherein the first electrode comprises a number of finger lines.
15. The solar module of claim 10 , wherein the second electrode is continuous.
16. The solar module of claim 10 , wherein a respective electrode comprises an electroplated layer.
17. The solar module of claim 16 , wherein the electroplated layer comprises Cu.
18. The solar module of claim 16 , wherein the electroplated layer is coated with Ag or Sn.
19. The solar module of claim 10 , wherein a respective electrode comprises a seed layer formed with a physical vapor deposition technique.
20. The solar module of claim 19 , wherein the seed layer comprises Cu or Ni.