Nonvolatile memory device and storage device including the nonvolatile memory device
A nonvolatile memory device includes a memory cell array having memory cells, a row decoder circuit connected to the memory cells through word lines, a page buffer circuit connected to the memory cells through bit lines, and a control circuit controlling the row decoder circuit and the page buffer circuit to repeatedly perform an erase loop including an erase and an erase verification with respect to the memory cells. The control circuit is configured to select one of an increase and a decrease of an erase voltage according to a result of the erase verification of a current erase loop and apply the controlled erase voltage to the memory cells in the erase operation of a subsequent erase loop.
1. A nonvolatile memory device comprising:
a memory cell array including memory cells;
a row decoder circuit connected to the memory cells through word lines;
a page buffer circuit connected to the memory cells through bit lines; and
a control circuit controlling the row decoder circuit and the page buffer circuit to repeatedly perform an erase loop including an erase and an erase verification with respect to the memory cells, wherein:
for a single erase operation of the memory cells:
the control circuit is configured to control an erase voltage on the basis of at least one of the number of erase failed memory cells and the number of erase passed memory cells in an erase verification of a first erase loop, and to apply the controlled erase voltage to the memory cells in an erase of a second erase loop,
the erase voltage is controlled by selecting one of increasing, maintaining and decreasing on the basis of at least one of the number of erase failed memory cells and the number of erase passed memory cells, and
the single erase operation is continued with the controlled erase voltage at the second erase loop after the erase voltage is controlled.
2. The nonvolatile memory device of claim 1 , wherein if the number of erase failed memory cells is greater than a reference value, the erase voltage increases.
3. The nonvolatile memory device of claim 1 , wherein if the number of erase failed memory cells is smaller than a reference value, the erase voltage decreases.
4. The nonvolatile memory device of claim 1 , wherein if the number of erase passed memory cells is greater than a first reference value and the number of erase failed memory cells is greater than a second reference value, the erase voltage is maintained.
5. The nonvolatile memory device of claim 4 , wherein if the number of erase failed memory cells is smaller than the second reference value, the erase voltage decreases.
6. The nonvolatile memory device of claim 1 , wherein if the number of erase passed memory cells is smaller than a first reference value, the erase voltage increases.
7. The nonvolatile memory device of claim 6 , wherein if the number of erase passed memory cells in a third erase loop becomes greater than the first reference value, the erase voltage is maintained in erase loops after the third erase loop.
8. The nonvolatile memory device of claim 7 , wherein if the number of erase failed memory cells in a fourth erase loop is smaller than a second reference value, the erase voltage decreases in erase loops after the fourth erase loop.
9. The nonvolatile memory device of claim 1 , wherein the control circuit is configured to detect the number of erase failed memory cells and the number of erase passed memory cells from fewer than all of the memory cells.
10. The nonvolatile memory device of claim 1 , wherein:
the control circuit controls the row decoder circuit and the page buffer circuit to repeatedly perform a program loop including a program and a program verification with respect to the memory cells, and
the control circuit is configured to control a program voltage on the basis of at least one of the number of program failed memory cells and the number of program passed memory cells in a program verification of a first program loop, and to apply the controlled program voltage to the memory cells in a program of a second program loop.