Semiconductor device and manufacturing method thereof
An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region.
1. A semiconductor device comprising:
a transistor comprising:
a first gate electrode;
a first gate insulating film over the first gate electrode;
a first oxide semiconductor layer over the first gate insulating film;
a second oxide semiconductor layer over the first oxide semiconductor layer; and
a source electrode and a drain electrode each over and electrically connected to the second oxide semiconductor layer,
wherein the second oxide semiconductor layer comprises indium, gallium, and zinc,
wherein the second oxide semiconductor layer comprises a crystalline region, and
wherein the first oxide semiconductor layer is formed of a material different from the second oxide semiconductor layer.
2. The semiconductor device according to claim 1 ,
wherein a c-axis of the crystalline region is aligned in a direction perpendicular or substantially perpendicular to a surface of the second oxide semiconductor layer,
wherein the crystalline region comprises a crystal comprising:
a first layer comprising indium; and
a second layer comprising gallium and not comprising indium, and
wherein the first layer and the second layer are stacked in a direction along the c-axis of the crystalline region.
3. The semiconductor device according to claim 1 , wherein the crystalline region comprises polycrystal.
4. The semiconductor device according to claim 1 , wherein the source electrode and the drain electrode are on and in contact with the first gate insulating film.
5. The semiconductor device according to claim 1 , wherein a carrier density of at least one of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than 1.0×10 12 cm −3 .
6. The semiconductor device according to claim 1 , wherein at least one of the first oxide semiconductor layer and the second oxide semiconductor layer comprises hydrogen in a concentration of 5×10 19 cm −3 or lower.
7. The semiconductor device according to claim 1 , wherein the first oxide semiconductor layer is formed of the material having main components different from a material of the second oxide semiconductor layer.
8. The semiconductor device according to claim 1 ,
wherein the second oxide semiconductor layer comprises:
a first region overlapping with the source electrode or the drain electrode; and
a second region not overlapping with either the source electrode or the drain electrode, and
wherein a thickness of the second region is smaller than a thickness of the first region.
9. A semiconductor device comprising:
a transistor comprising:
a first gate electrode;
a first gate insulating film over the first gate electrode;
a first oxide semiconductor layer over the first gate insulating film;
a second oxide semiconductor layer over the first oxide semiconductor layer;
a source electrode and a drain electrode each over and electrically connected to the second oxide semiconductor layer;
a second gate insulating film over the second oxide semiconductor layer, the source electrode, and the drain electrode; and
a second gate electrode over the second gate insulating film,
wherein the second oxide semiconductor layer comprises indium, gallium, and zinc,
wherein the second oxide semiconductor layer comprises a crystalline region, and
wherein the first oxide semiconductor layer is formed of a material different from the second oxide semiconductor layer.
10. The semiconductor device according to claim 9 ,
wherein a c-axis of the crystalline region is aligned in a direction perpendicular or substantially perpendicular to a surface of the second oxide semiconductor layer,
wherein the crystalline region comprises a crystal comprising:
a first layer comprising indium; and
a second layer comprising gallium and not comprising indium, and
wherein the first layer and the second layer are stacked in a direction along the c-axis of the crystalline region.
11. The semiconductor device according to claim 9 , wherein the crystalline region comprises polycrystal.
12. The semiconductor device according to claim 9 , wherein the source electrode and the drain electrode are on and in contact with the first gate insulating film.
13. The semiconductor device according to claim 9 , wherein a carrier density of at least one of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than 1.0×10 12 cm −3 .
14. The semiconductor device according to claim 9 , wherein at least one of the first oxide semiconductor layer and the second oxide semiconductor layer comprises hydrogen in a concentration of 5×10 19 cm −3 or lower.
15. The semiconductor device according to claim 9 , wherein the first oxide semiconductor layer is formed of the material having main components different from a material of the second oxide semiconductor layer.
16. The semiconductor device according to claim 9 ,
wherein the second oxide semiconductor layer comprises:
a first region overlapping with the source electrode or the drain electrode; and
a second region not overlapping with either the source electrode or the drain electrode, and
wherein a thickness of the second region is smaller than a thickness of the first region.
17. A semiconductor device comprising:
a transistor comprising:
a first gate electrode;
a first gate insulating film over the first gate electrode;
a first oxide semiconductor layer over the first gate insulating film;
a second oxide semiconductor layer over the first oxide semiconductor layer; and
a source electrode and a drain electrode each over and electrically connected to the second oxide semiconductor layer,
wherein the second oxide semiconductor layer comprises indium, gallium, and zinc,
wherein the second oxide semiconductor layer comprises a crystalline region,
wherein each of the source electrode and the drain electrode comprises:
a first conductive film;
a second conductive film on and in contact with the first conductive film; and
a third conductive film on and in contact with the second conductive film, and
wherein the first oxide semiconductor layer is formed of a material different from the second oxide semiconductor layer.
18. The semiconductor device according to claim 17 ,
wherein a c-axis of the crystalline region is aligned in a direction perpendicular or substantially perpendicular to a surface of the second oxide semiconductor layer,
wherein the crystalline region comprises a crystal comprising:
a first layer comprising indium; and
a second layer comprising gallium and not comprising indium, and
wherein the first layer and the second layer are stacked in a direction along the c-axis of the crystalline region.
19. The semiconductor device according to claim 17 , wherein the crystalline region comprises polycrystal.
20. The semiconductor device according to claim 17 , wherein the source electrode and the drain electrode are on and in contact with the first gate insulating film.
21. The semiconductor device according to claim 17 , wherein a carrier density of at least one of the first oxide semiconductor layer and the second oxide semiconductor layer is lower than 1.0×10 12 cm −3 .
22. The semiconductor device according to claim 17 , wherein at least one of the first oxide semiconductor layer and the second oxide semiconductor layer comprises hydrogen in a concentration of 5×10 19 cm −3 or lower.
23. The semiconductor device according to claim 17 ,
wherein the first conductive film and the third conductive film comprise titanium or molybdenum, and
wherein the second conductive film comprises aluminum.
24. The semiconductor device according to claim 17 , wherein the first oxide semiconductor layer is formed of the material having main components different from a material of the second oxide semiconductor layer.
25. The semiconductor device according to claim 17 ,
wherein the second oxide semiconductor layer comprises:
a first region overlapping with the source electrode or the drain electrode; and
a second region not overlapping with either the source electrode or the drain electrode, and
wherein a thickness of the second region is smaller than a thickness of the first region.