3D semiconductor memory device having variable resistance memory elements

1. A semiconductor memory device comprising a memory cell array, the memory cell array comprising memory cells,

the memory cell array comprising:

first conductive layers stacked at a predetermined pitch in a first direction perpendicular to a substrate, the first conductive layers extending in a second direction parallel to the substrate;

a memory layer provided in common on side surfaces of the first conductive layers on a third direction, the third direction extending in a direction perpendicular to the first and second directions; and

a second conductive layer comprising a first side surface on the third direction in contact with the side surfaces of the first conductive layers via the memory layer, the second conductive layer extending in the first direction,

an entire width in the second direction of the first side surface at an upper end thereof being smaller than an entire width in the second direction of the first side surface at a lower end thereof, the lower end of the first side surface being closer to the substrate than the upper end of the first side surface, and

an entire thickness in the third direction of the memory layer between the side surfaces of the first conductive layers and the first side surface of the second conductive layer at an upper end thereof being larger than an entire thickness in the third direction of the memory layer between the side surfaces of the first conductive layers and the first side surface of the second conductive layer at a lower end thereof, the lower end of the memory layer being closer to the substrate than the upper end of the memory layer.

2. The semiconductor memory device according to claim 1 , wherein

the memory cell array further comprises:

a selection transistor having a first end connected to one end of the second conductive layer;

a select gate line connected to a gate of the selection transistor; and

a wiring line connected to a second end of the selection transistor.

3. The semiconductor memory device according to claim 1 ,

the memory cell array further comprising:

a third conductive layer extending in the third direction;

a semiconductor layer in contact with an upper surface of the third conductive layer and a lower surface of the second conductive layer, the semiconductor layer extending in the first direction;

a gate insulating layer provided on a side surface of the semiconductor layer; and

a fourth conductive layer provided on the side surface of the semiconductor layer via the gate insulating layer, the fourth conductive layer extending in the second direction.

4. The semiconductor memory device according to claim 1 , wherein

the memory layer is a variable resistance layer and is provided as a plane in the first and second directions.

5. The semiconductor memory device according to claim 1 , wherein

the first conductive layers are formed in a comb shape when viewed in the first direction.

6. A semiconductor memory device comprising a memory cell array, the memory cell array comprising memory cells,

the memory cell array comprising:

first conductive layers stacked at a predetermined pitch in a first direction perpendicular to a substrate, the first conductive layers extending in a second direction parallel to the substrate;

a first memory layer provided in common on side surfaces of the first conductive layers on a third direction, the third direction extending in a direction perpendicular to the first and second directions; and

a second conductive layer comprising a first side surface on the third direction in contact with the side surfaces of the first conductive layers via the first memory layer, the second conductive layer extending in the first direction, and

an entire thickness in the third direction of the first memory layer between the side surfaces of the first conductive layers and the first side surface of the second conductive layer at an upper end thereof being larger than an entire thickness in the third direction of the first memory layer between the side surfaces of the first conductive layers and the first side surface of the second conductive layer at a lower end thereof, the lower end of the first memory layer being closer to the substrate than the upper end of the first memory layer.

7. The semiconductor memory device according to claim 6 , wherein

an entire width in the third direction of the second conductive layer at an upper end thereof being smaller than an entire width in the third direction of the second conductive layer at a lower end thereof, the lower end of the second conductive layer being closer to the substrate than the upper end of the second conductive layer.

8. The semiconductor memory device according to claim 6 , wherein

the first memory layer is a variable resistance layer.

9. The semiconductor memory device according to claim 6 , further comprising:

third conductive layers stacked at the predetermined pitch in the first direction, the third conductive layers extending in the second direction; and

a second memory layer provided in common on side surfaces of the third conductive layers;

the second conductive layer comprising a second side surface in contact with the side surfaces of the third conductive layers via the second memory layer.

10. A semiconductor memory device comprising a memory cell array, the memory cell array comprising memory cells,

the memory cell array comprising:

first conductive layers stacked at a predetermined pitch in a first direction perpendicular to a substrate, the first conductive layers extending in a second direction parallel to the substrate;

a second conductive layer comprising a first side surface on a third direction, the third direction extending in a direction perpendicular to the first and second directions and a second side surface on the third direction, the second side surface being opposite to the first side surface, the second conductive layer extending in the first direction;

the memory cells include first memory cells and second memory cells, the first memory cells being provided between the first side surface of the second conductive layer and the first conductive layers and the second memory cells being provided at the second side surface of the second conductive layer corresponding to the first memory cells, and

an entire width in the second direction of the first side surface at an upper end thereof being smaller than an entire width in the second direction of the first side surface at a lower end thereof, the lower end being closer to the substrate than the upper end.

11. The semiconductor memory device according to claim 10 , wherein

the first memory cells include a first memory layer provided in common on side surfaces of the first conductive layers on the third direction; and

an entire thickness in the third direction of the first memory layer between the side surfaces of the first conductive layers and the first side surface of the second conductive layer at an upper end thereof being larger than an entire thickness in the third direction of the first memory layer between the side surfaces of the first conductive layers and the first side surface of the second conductive layer at a lower end thereof, the lower end of the first memory layer being closer to the substrate than the upper end of the first memory layer.

12. The semiconductor memory device according to claim 11 , wherein

the first memory layer is a variable resistance layer.

13. The semiconductor memory device according to claim 11 , wherein

an entire width in the third direction of the second conductive layer at the upper end thereof being smaller than an entire width in the third direction of the second conductive layer at the lower end thereof, the lower end of the second conductive layer being closer to the substrate than the upper end of the second conductive layer.

14. The semiconductor memory device according to claim 10 , further comprising:

third conductive layers stacked at the predetermined pitch in the first direction, the third conductive layers extending in the second direction; and

the second memory cells are provided between the second side surface of the second conductive layer and the third conductive layers.

15. The semiconductor memory device according to claim 14 , wherein

the second memory cells include a second memory layer provided in common on side surfaces of the third conductive layers.

16. The semiconductor memory device according to claim 10 , further comprises:

a selection transistor having a first end electrically connected to the lower end of the second conductive layer;

a select gate line connected to a gate of the selection transistor; and

a wiring line connected to a second end of the selection transistor.