Sacrificial layer for post-laser debris removal systems
A method of removing post-laser debris from a wafer includes, for an embodiment, forming a sacrificial layer over a layer to be patterned, patterning the sacrificial layer and the layer to be patterned using laser ablation, and removing the sacrificial layer and debris deposited on the sacrificial layer with water. The sacrificial layer includes a water soluble binder and a water soluble ultraviolet (UV) absorbent. Systems for removing the post-laser debris are also described.
1. A method of removing post-laser debris from a wafer comprising:
forming a sacrificial layer over a layer to be patterned, wherein the sacrificial layer comprises a water soluble binder and a water soluble ultraviolet (UV) absorbent;
patterning the sacrificial layer and the layer to be patterned using laser ablation; and
removing the sacrificial layer and debris deposited on the sacrificial layer with water.
2. The method of claim 1 , wherein the laser ablation uses an excimer laser.
3. The method of claim 2 , wherein excimer laser comprises a 248 nm, 308 nm, or 355 nm excimer laser.
4. The method of claim 1 , wherein the water soluble binder is selected from the group consisting of polyvinyl alcohol (PVA), polyvinylpyrrolidone (PVP), polyethylene oxide (PEO), polyacrylic materials, ethyl cellulose, methyl ester, and combinations thereof.
5. The method of claim 1 , wherein the water soluble UV absorbent is selected from the group consisting of benzotriazole-based UV absorbent materials, triazine-based UV absorbent materials, and combinations thereof.
6. The method of claim 1 , wherein the sacrificial layer is about 0.5 to 2 microns thick.
7. The method of claim 6 , wherein the sacrificial layer is about 1 to 1.5 microns thick.
8. The method of claim 1 , wherein the layer to be patterned comprises a dielectric material, glass, metal, or combinations thereof.
9. The method of claim 1 , wherein a ratio of the water soluble binder to the water soluble UV absorbent in the sacrificial layer is from about 30:1 to about 5:1.
10. The method of claim 1 , wherein the water soluble binder comprises polyethylene oxide (PEO) and the water soluble UV absorbent comprises a liquid hydroxyphenyl-triazine.
11. The method of claim 1 , wherein removing the sacrificial layer and the debris comprises spraying water on the sacrificial layer, or using a water bath.
12. The method of claim 1 , further comprising rinsing the layer to be patterned with an alcohol after removing the sacrificial layer and debris with water.
13. A system for performing the method of claim 1 , comprising:
a laser ablation system;
a water debris removal system; and
a wafer process system.
14. A method of removing post-laser debris from a wafer comprising:
combining a water soluble binder and a water soluble ultraviolet (UV) absorbent to form a solution;
applying the solution on a dielectric, glass, or metal layer to form a sacrificial layer;
patterning the sacrificial layer and the dielectric, glass, or metal layer using laser ablation; and
removing the sacrificial layer and debris deposited on the sacrificial layer with water.
15. The method of claim 14 , wherein the solution comprises about 1 to 10 percent by weight of the water soluble binder.
16. The method of claim 15 , wherein the water soluble binder comprises polyethylene oxide (PEO) and the water soluble UV absorbent comprises a liquid hydroxyphenyl-triazine.
17. The method of claim 14 , wherein the laser ablation uses an excimer laser.
18. The method of claim 14 , wherein the water soluble binder is selected from the group consisting of polyvinyl alcohol (PVA), polyvinylpyrrolidone (PVP), polyethylene oxide (PEO), polyacrylic materials, ethyl cellulose, methyl ester, and combinations thereof.
19. The method of claim 14 , wherein the water soluble UV absorbent is selected from the group consisting of benzotriazole-based UV absorbent materials, triazine-based UV absorbent materials, and combinations thereof.
20. The method of claim 14 , wherein the sacrificial layer is about 1 to 1.5 microns thick.
21. The method of claim 14 , further comprising rinsing the dielectric, glass, or metal layer with an alcohol after removing the sacrificial layer and debris with water.
22. A system for performing the method of claim 14 , comprising:
a laser ablation system;
a water debris removal system; and
a wafer process system.
23. The method of claim 14 , wherein the solution is applied on the dielectric layer and the laser ablation uses an excimer laser.
24. The method of claim 23 , wherein the water soluble binder comprises polyethylene oxide (PEO) and the water soluble UV absorbent comprises a liquid hydroxyphenyl-triazine.
25. The method of claim 24 , wherein a ratio of the polyethylene oxide to the liquid hydroxyphenyl-triazine in the sacrificial layer is from about 30:1 to about 5:1.
26. The method of claim 23 , wherein the sacrificial layer is about 1 to 1.5 microns thick.
27. The method of claim 23 , further comprising rinsing the dielectric layer with an alcohol after removing the sacrificial layer and debris with the water spray.
28. A system for performing the method of claim 23 , comprising:
a laser ablation system;
a water debris removal system; and
a wafer process system.