Scalable polylithic on-package integratable apparatus and method

1. An apparatus comprising:

a first die including:

a processing core;

a crossbar switch coupled to the processing core; and

a first edge interface coupled to the crossbar switch; and

a second die including:

a first edge interface positioned at a periphery of the second die and coupled to the first edge interface of the first die, wherein the first edge interface of the first die and the first edge interface of the second die are positioned across each other;

a clock synchronization circuit coupled to the second edge interface; and

a memory interface coupled to the clock synchronization circuit, wherein the clock synchronization circuit includes circuitry to enable clock domain transitions across the memory interface and the first edge interface of the second die.

2. The apparatus of claim 1 , wherein the first edge interface of the first die and the first edge interface of the second die are coupled via a package-level interconnect.

3. The apparatus of claim 2 , wherein the package-level interconnect is an embedded bridge.

4. The apparatus of claim 2 , wherein the package-level interconnect is a high density interposer.

5. The apparatus of claim 1 , wherein the processing core of the first die is one of a compute core or an accelerator.

6. The apparatus of claim 1 , wherein the second die is a memory input-output (IO) die.

7. The apparatus of claim 1 , wherein each of the first edge interfaces of the first and second dies comprise an inverter.

8. The apparatus of claim 1 comprises:

a third die including:

a processing core;

a crossbar switch coupled the processing core;

a first edge interface, coupled to the crossbar switch, positioned at a periphery of the third die; and

a first edge interface coupled to a second edge interface of the first die, the first edge interface of the third die and the second edge interface of the first die are positioned across each other.

9. The apparatus of claim 8 , wherein the first edge interface of the third die and the second edge interface of the first die are coupled via a package-level interconnect.

10. The apparatus of claim 8 comprises:

a fourth die including:

a first edge interface positioned at a periphery of the fourth die and coupled to a second edge interface of the third die, wherein the first edge interface of the fourth die and the second edge interface of the third die are positioned across each other;

a clock synchronization circuit coupled to the first edge interface of the fourth die; and

a network interface coupled to the clock synchronization circuit.

11. The apparatus of claim 10 , wherein at least one of the first, second, third, or fourth dies is manufactured on a first process technology node and wherein at least another one of the first, second, third, or fourth dies is manufactured on a second process technology node different from the first process technology node.

12. The apparatus of claim 10 , wherein the second edge interface of the third die and the first edge interface of the fourth die are coupled via a package-level interconnect.

13. The apparatus of claim 10 , wherein the first, second, third, and fourth dies share a silicon substrate.

14. The apparatus of claim 10 , wherein at least two of the first, second, third, and fourth dies have separate substrates.

15. The apparatus of claim 10 , wherein the first, second, third, and fourth dies are packaged in a single package.

16. The apparatus of claim 10 , wherein the fourth die is a network input-output (IO) die.

17. The apparatus of claim 10 , wherein the clock synchronization circuit of the fourth die is operable to enable clock domain transitions across the network interface and the first edge interface of the fourth die.