Resistive random access memory
A resistive random access memory is provided. The resistive random access memory includes a bottom electrode, a top electrode, a resistance-switching layer, an oxygen exchange layer, and a sidewall protective layer. The bottom electrode is disposed over a substrate. The top electrode is disposed over the bottom electrode. The resistance-switching layer is disposed between the bottom electrode and the top electrode. The oxygen exchange layer is disposed between the resistance-switching layer and the top electrode. The sidewall protective layer as an oxygen supply layer is at least disposed at sidewalls of the oxygen exchange layer.
1. A resistive random access memory comprising:
a bottom electrode disposed over a substrate;
a top electrode disposed over the bottom electrode;
a resistance-switching layer disposed between the bottom electrode and the top electrode;
an oxygen exchange layer disposed between the resistance-switching layer and the top electrode, wherein the edges of the oxygen exchange layer, the resistance-switching layer, and the bottom electrode are continuously linked, and an outer portion of the oxygen exchange layer is partially oxidized; and
a sidewall protective layer as an oxygen supply layer at least disposed at sidewalls of the oxygen exchange layer.
2. The resistive random access memory according to claim 1 , wherein the oxygen supply layer is further disposed at sidewalls of the bottom electrode, the resistance-switching layer, and the top electrode.
3. The resistive random access memory according to claim 1 , further comprising an oxygen-rich layer disposed between the oxygen exchange layer and the top electrode.
4. The resistive random access memory according to claim 1 , further comprising a block layer disposed between the oxygen exchange layer and the resistance-switching layer, where the edge of the block layer is continuously linked with those of the oxygen exchange layer and the resistance-switching layer.
5. The resistive random access memory according to claim 1 , wherein a material of the oxygen supply layer comprises aluminum oxide, silicon oxide, hafnium oxide, or zirconium oxide.
6. The resistive random access memory according to claim 1 , wherein a material of the oxygen exchange layer comprises titanium, tantalum, hafnium, zirconium, platinum, or aluminum.
7. The resistive random access memory according to claim 1 , wherein a material of the oxygen-rich layer comprises titanium oxynitride or tantalum oxynitride.
8. A resistive random access memory comprising:
a bottom electrode disposed over a substrate;
a top electrode disposed over the bottom electrode;
a resistance-switching layer disposed between the bottom electrode and the top electrode;
an oxygen exchange layer disposed between the resistance-switching layer and the top electrode, wherein the edges of the oxygen exchange layer, the resistance-switching layer, and the bottom electrode are continuously linked, the bottom electrode, the resistance-switching layer, and the oxygen exchange layer have sloped sidewalls, and an outer portion of the oxygen exchange layer is partially oxidized; and
a sidewall protective layer as an oxygen supply layer at least disposed at sidewalls of the oxygen exchange layer.