Semiconductor structure and manufacturing method thereof
A method for manufacturing a semiconductor structure includes forming a plurality of dummy semiconductor fins on a substrate. The dummy semiconductor fins are adjacent to each other and are grouped into a plurality of fin groups. The dummy semiconductor fins of the fin groups are recessed one group at a time.
1. A semiconductor structure comprising:
a substrate;
at least one active structure disposed on the substrate;
a plurality of dummy semiconductor fins disposed on the substrate and adjacent to the at least one active structure, wherein a first pair of the plurality of dummy semiconductor fins have non-concave topmost surfaces, wherein a second pair of the plurality of dummy semiconductor fins have concave topmost surfaces, wherein a third pair of the plurality of dummy semiconductor fins have non-concave topmost surfaces, wherein the second pair of the plurality of dummy semiconductor fins are disposed between the first pair of the plurality of dummy semiconductor fins and the third pair of the plurality of dummy semiconductor fins, wherein the plurality of dummy semiconductor fins are shorter than the at least one active structure, wherein the plurality of dummy semiconductor fins have a height variation of less than about 5 nm, and wherein topmost surfaces of the plurality of dummy semiconductor fins are below a topmost surface of the at least one active structure; and
an isolation structure covering the plurality of dummy semiconductor fins, at least a portion of the at least one active structure extending above a topmost surface of the isolation structure.
2. The semiconductor structure of claim 1 , wherein the at least one active structure is an active semiconductor fin.
3. The semiconductor structure of claim 1 , wherein a height of the at least one active structure is between about 100 nm and about 160 nm.
4. The semiconductor structure of claim 1 , wherein a height of the first pair of the plurality of dummy semiconductor fins is between about 15 nm and about 30 nm.
5. The semiconductor structure of claim 1 , wherein the first pair of the plurality of dummy semiconductor fins, the second pair of the plurality of dummy semiconductor fins and the third pair of the plurality of dummy semiconductor fins are disposed on a same side of the at least one active structure.
6. A semiconductor structure comprising:
a substrate;
at least one active structure disposed on the substrate; and
a plurality of dummy semiconductor fins disposed adjacent to the at least one active structure, wherein at least two of the dummy semiconductor fins have concave top surfaces, and at least another two of the dummy semiconductor fins have non-concave top surfaces, and wherein the at least two of the dummy semiconductor fins having the concave top surfaces are disposed between the at least another two of the dummy semiconductor fins having the non-concave top surfaces.
7. The semiconductor structure of claim 6 , further comprising an isolation structure covering the dummy semiconductor fins.
8. The semiconductor structure of claim 7 , wherein a portion of the at least one active structure protrudes from the isolation structure.
9. The semiconductor structure of claim 7 , wherein a topmost surface of the isolation structure is below a topmost surface of the at least one active structure.
10. The semiconductor structure of claim 6 , wherein the at least two of the dummy semiconductor fins having the concave top surfaces are adjacent to each other.
11. The semiconductor structure of claim 6 , wherein the at least two of the dummy semiconductor fins having the non-concave top surfaces are adjacent to each other.
12. The semiconductor structure of claim 6 , wherein the at least one active structure is an oxide define pattern.
13. A semiconductor structure comprising:
a substrate;
at least one active structure disposed on the substrate, wherein the at least one active structure has a first height; and
a plurality of dummy semiconductor fins disposed adjacent to the at least one active structure, wherein a height difference of two dummy semiconductor fins of the plurality of dummy semiconductor fins is less than 2% of the first height of the at least one active structure, wherein a top surface of a first one of the two dummy semiconductor fins is curved outwardly, wherein a top surface of a second one of the two dummy semiconductor fins is curved inwardly, and wherein the first one of the two dummy semiconductor fins is interposed between the at least one active structure and the second one of the two dummy semiconductor fins.
14. The semiconductor structure of claim 13 , wherein top surfaces of the two dummy semiconductor fins are curved outwardly.
15. The semiconductor structure of claim 13 , wherein top surfaces of the two dummy semiconductor fins are curved inwardly.
16. The semiconductor structure of claim 13 , wherein the two dummy semiconductor fins are adjacent to each other.
17. The semiconductor structure of claim 13 , further comprising an isolation structure disposed on the plurality of dummy semiconductor fins.
18. The semiconductor structure of claim 17 , wherein a portion of the at least one active structure protrudes from the isolation structure.
19. The semiconductor structure of claim 17 , wherein the isolation structure is in physical contact with the top surface of the first one of the two dummy semiconductor fins and the top surface of the second one of the two dummy semiconductor fins.
20. The semiconductor structure of claim 13 , wherein the at least one active structure is an oxide define pattern.