Self-aligned low dielectric constant gate cap and a method of forming the same
According to an embodiment of the present invention, self-aligned gate cap, comprises a gate located on a substrate; a gate cap surrounding a side of the gate; a contact region self-aligned to the gate; and a low dielectric constant oxide having a dielectric constant of less than 3.9 located on top of the gate. According to an embodiment of the present invention, a method of forming a self-aligned contact comprises removing at least a portion of an interlayer dielectric layer to expose a top surface of a gate cap located on a substrate; recessing the gate cap to form a recessed area; depositing a low dielectric constant oxide having a dielectric constant of less than 3.9 in the recessed area; and polishing a surface of the low dielectric constant oxide to expose a contact area.
1. A method of forming a self-aligned contact, comprising:
forming a gate on a substrate;
forming a conductive contact on the substrate and adjacent to the gate;
after forming the conductive contact, removing at least a portion of an interlayer dielectric layer to expose a top surface of a gate cap located on the substrate and on a top surface of the gate;
partially recessing the gate cap to form a recessed area such that the top surface of the gate is not exposed;
depositing a low dielectric constant oxide having a dielectric constant of less than 3.9 on a surface of the partially recessed gate cap in the recessed area; and
polishing a surface of the low dielectric constant oxide to expose a surface of the conductive contact.
2. The method of claim 1 , wherein the removing comprises dry etching the interlayer dielectric layer.
3. The method of claim 1 , wherein the recessing the gate cap comprises a wet recessing step or a dry recessing step.
4. The method of claim 1 , wherein a gate cap layer with a thickness of 1 to 20 nanometers is located on the top surface of the gate.
5. The method of claim 1 , wherein the low dielectric constant oxide has a dielectric constant of 2.8 to 3.5.
6. The method of claim 1 , wherein the low dielectric constant oxide comprises a porous silicon dioxide.
7. The method of claim 1 , wherein the low dielectric constant oxide comprises a doped silicon dioxide.
8. A method of forming a self-aligned contact, comprising:
forming a gate on a substrate;
forming a conductive contact on the substrate and adjacent to the gate;
after forming the conductive contact, removing at least a portion of an interlayer dielectric layer to expose a top surface of a gate cap located on the substrate and on a top surface of the gate;
partially recessing the gate cap to form a partially recessed gate cap in a recessed area, the partially recessed gate gap comprising a thickness of about one to about ten nanometers;
depositing a low dielectric constant oxide on a surface of the partially recessed gate cap in the recessed area; and
polishing a surface of the low dielectric constant oxide to expose a surface of the conductive contact.
9. The method of claim 8 , wherein the low dielectric constant oxide has a dielectric constant of 2.8 to 3.5.