Package structure and method for forming the same
A package structure and method for forming the same are provided. The package structure includes a substrate and a semiconductor die formed over the substrate. The package structure also includes a package layer covering the semiconductor die and a conductive structure formed in the package layer. The package structure includes a first insulating layer formed on the conductive structure, and the first insulating layer includes monovalent metal oxide. A second insulating layer is formed between the first insulating layer and the package layer. The second insulating layer includes monovalent metal oxide, and a weight ratio of the monovalent metal oxide in the second insulating layer is greater than a weight ratio of the monovalent metal oxide in first insulating layer.
1. A package structure, comprising:
a substrate;
a semiconductor die formed over the substrate;
a package layer adjacent to the semiconductor die;
a conductive structure formed in the package layer;
a first insulating layer formed on the conductive structure, wherein the first insulating layer comprises monovalent metal oxide; and
a second insulating layer formed between the first insulating layer and the package layer, wherein the second insulating layer comprises the monovalent metal oxide, and wherein a weight ratio of the monovalent metal oxide in the second insulating layer is greater than a weight ratio of the monovalent metal oxide in the first insulating layer.
2. The package structure as claimed in claim 1 , wherein the conductive structure comprises a metal material, and the monovalent metal oxide comprises a metal element that is the same as that of the metal material.
3. The package structure as claimed in claim 1 , wherein the first insulating layer further comprises divalent metal oxide, the second insulating layer further comprises divalent metal oxide, and a weight ratio of the divalent metal oxide in the second insulating layer is smaller than a weight ratio of the divalent metal oxide in the first insulating layer.
4. The package structure as claimed in claim 3 , wherein the monovalent metal oxide is cuprous oxide (Cu 2 O), and the divalent metal oxide is cupric oxide (CuO).
5. The package structure as claimed in claim 1 , wherein the weight ratio of the monovalent metal oxide in the second insulating layer is in a range from about 30 wt % to about 60 wt %.
6. The package structure as claimed in claim 1 , wherein a surface roughness of the second insulating layer is greater than a surface roughness of the first insulating layer.
7. The package structure as claimed in claim 1 , wherein the second insulating layer is in contact with the package layer.
8. The package structure as claimed in claim 1 , further comprising:
a redistribution layer formed over the package layer, wherein the redistribution layer is electrically connected to the semiconductor die.
9. The package structure as claimed in claim 1 , wherein the first insulating layer is a native oxide layer.
10. A package structure, comprising:
a substrate;
a semiconductor die formed over the substrate;
a package layer adjacent to the semiconductor die;
a conductive structure formed in the package layer; and
an insulating layer formed on the conductive structure, wherein the insulating layer comprises more monovalent metal oxide at a first location near an outside surface of the insulating layer than at a second location near an inner surface which is in contact with the conductive structure.
11. The package structure as claimed in claim 10 , wherein the conductive structure comprises a metal material, and the monovalent metal oxide comprises a metal element that is the same as that of the metal material.
12. The package structure as claimed in claim 10 , wherein a weight ratio of the monovalent metal oxide near the outside surface of the insulating layer is about 1.5 to about 3 times greater than a weight ratio of the monovalent metal oxide near the inner surface of the insulating layer.
13. The package structure as claimed in claim 10 , further comprising:
a redistribution layer formed over the package layer, wherein the redistribution layer is electrically connected to the semiconductor die.
14. A package structure comprising:
a bottom package comprising:
a semiconductor die in a package layer;
a conductive structure in the package layer, the conductive structure laterally spaced from the semiconductor die;
a first insulating layer on sidewalls of the conductive structure, the first insulating layer comprising monovalent metal oxide; and
a second insulating layer lining the first insulating layer, the second insulating layer comprising the monovalent metal oxide;
wherein a weight ratio of the monovalent metal oxide in the first insulating layer is less than a weight ratio of the monovalent metal oxide in the second insulating layer.
15. The package structure as claimed in claim 14 , further comprising a redistribution structure underlying the package layer.
16. The package structure as claimed in claim 15 , further comprising a base layer overlying the package layer.
17. The package structure as claimed in claim 16 , further comprising a top package connected to the bottom package by electrical connectors formed in the base layer.
18. The package structure as claimed in claim 14 , wherein the conductive structure is an InFO via (TIV).
19. The package structure as claimed in claim 14 , wherein the conductive structure comprises a metal material, and wherein the first insulating layer and the second insulating layer comprise the metal material.
20. The package structure as claimed in claim 14 , wherein a surface roughness of the second insulating layer is greater than a surface roughness of the first insulating layer.