Conductive bridge memory system and method of manufacture thereof
View Patent ↗A conductive bridge memory system and method of manufacture thereof including: providing a dielectric layer having a hole on a bottom electrode, the hole over the bottom electrode; forming an ionic source layer in the hole and over the bottom electrode including: depositing a reactivation layer over the bottom electrode, depositing a first ion source layer on the reactivation layer, depositing another of the reactivation layer on the first ion source layer, depositing a second ion source layer on the another of the reactivation layer; and forming an upper electrode on the ionic source layer.
1. A memory system, comprising:
a dielectric layer having a hole;
a bottom electrode, wherein the bottom electrode is formed at least one of in and on the dielectric layer, and wherein the hole of the dielectric layer is over the bottom electrode;
an ionic source layer in the hole and over the bottom electrode, the ionic source layer including:
a reactivation layer over the bottom electrode,
a first ion source layer on the reactivation layer,
another of the reactivation layer on the first ion source layer,
a second ion source layer on the another of the reactivation layer; and
an upper electrode on the ionic source layer.
2. The system as claimed in claim 1 , further comprising:
a resistance change layer in the hole and on the bottom electrode.
3. The system as claimed in claim 1 , wherein the first ion source layer includes:
an early transition metal; and
a chalcogen.
4. The system as claimed in claim 1 , wherein the second ion source layer includes:
a late transition metal; and
a chalcogen.
5. The system as claimed in claim 1 , wherein the reactivation layer includes:
an early main group metal; and
a chalcogen.
6. The system as claimed in claim 1 , further comprising:
a resistance change layer in the hole and on the bottom electrode, wherein:
the reactivation layer includes an early main group metal and a chalcogen;
the first ion source layer includes an early transition metal and a chalcogen; and
the second ion source layer includes a late transition metal and a chalcogen.
7. The system as claimed in claim 6 , further comprising:
a transistor connected to the bottom electrode.
8. The system as claimed in claim 6 , wherein the first ion source layer includes:
zirconium; and
tellurium.
9. The system as claimed in claim 6 , wherein the second ion source layer includes:
copper; and
tellurium.
10. The system as claimed in claim 6 , wherein the reactivation layer includes:
aluminum; and
tellurium.
11. A memory system, comprising:
a dielectric layer having a hole;
a bottom electrode, wherein the hole of the dielectric layer is over the bottom electrode;
a resistance change layer in the hole and on the bottom electrode;
an ionic source layer in the hole and on the resistance change layer, the ionic source layer including:
a reactivation layer, having aluminum telluride, on the resistance change layer,
a first ion source layer, having zirconium telluride, on the reactivation layer,
another of the reactivation layer on the first ion source layer,
a second ion source layer, having copper telluride, on the another of the reactivation layer; and
an upper electrode on the ionic source layer.
12. The system as claimed in claim 11 , wherein the ionic source layer includes materials deposited by chemical vapor deposition or atomic layer deposition.
13. The system as claimed in claim 11 , wherein the first ion source layer having zirconium telluride includes a zirconium precursor having the general chemical formula of Zr(NR 2 ) 4 .
14. The system as claimed in claim 11 , wherein the second ion source layer having copper telluride includes a reactivated surface of the first ion source layer having zirconium telluride.
15. The system as claimed in claim 11 , wherein the surface of the first ion source layer is activated with a reactivation layer having aluminum telluride.
16. A conductive bridge memory system, comprising:
a bottom electrode;
a dielectric layer having a hole over the bottom electrode;
an ionic source layer in the hole and over the bottom electrode, the ionic source layer including:
a reactivation layer over the bottom electrode,
a first ion source layer on the reactivation layer,
another reactivation layer on the first ion source layer,
a second ion source layer on the another reactivation layer; and
an upper electrode on the ionic source layer.
17. The system as claimed in claim 16 , further comprising:
a resistance change layer in the hole and on the bottom electrode.
18. The system as claimed in claim 16 , wherein the first ion source layer includes zirconium telluride.
19. The system as claimed in claim 16 , wherein the second ion source layer includes copper telluride.
20. The system as claimed in claim 16 , wherein the reactivation layer includes aluminum telluride.