IP Library Granted Patent US 9,921,916
Granted Patent B2
US 9,921,916 · App. 14/975,272 · Granted Mar 20, 2018

Management of power loss in a memory device

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Quick Facts
Patent No.
US 9,921,916
App. No.
14/975,272
Granted
Mar 20, 2018
Kind
B2
Abstract

Provided is a memory device, comprising a non-volatile memory, an energy store coupled to an input power module of the non-volatile memory, and a power management module configurable to determine whether or not to supply backup power to the non-volatile memory via the energy store to initiate a shutdown process, based on differentiating a voltage glitch from an actual loss of power in a power line. Provided also is a computational device that includes the memory device. Provided also is a method in which a power management module of the memory device determines whether or not to supply backup power to the non-volatile memory via the energy store to initiate a shutdown process, based on differentiating a voltage glitch from an actual loss of power in a power line.

Claims (64)

1. A memory device, comprising:

a non-volatile memory;

an energy store coupled to an input power module of the non-volatile memory;

a switch coupled to a power line to control transmission of power to the non-volatile memory; and

a power management module configurable to:

determine whether a voltage drop has occurred, wherein the voltage drop occurs either via a voltage glitch or via an actual loss of power;

turn off the switch, in response to determining that the voltage drop has occurred;

determine that the actual loss of power has occurred, in response to turning off the switch; and

control the energy store to supply power to the non-volatile memory, in response to determining that the actual loss of power has occurred.

2. The memory device of claim 1 , wherein the power management module is further configurable to:

maintain the switch in a state in which the power line is able to supply power to the non-volatile memory, in response to determining that no voltage drop has occurred; and

preserve energy in a source power rail of the switch for a time interval between the determining of the voltage drop and the determining of the actual loss of power.

3. The memory device of claim 1 , wherein the power management module is further configurable to:

maintain or restore the switch in a state in which the power line is able to supply power to the non-volatile memory, in response to determining that no actual loss of power has occurred.

4. The memory device of claim 1 , wherein the memory device is a memory board or a storage drive, wherein the non-volatile memory comprises a plurality of non-volatile memory chips, and wherein the energy store is a capacitor that is configurable to store charge.

5. The memory device of claim 1 , wherein the switch comprises two MOSFETs with a single gate that is controlled by the power management module, wherein

in response to a reverse voltage condition caused by a voltage drop detected by the switch, the power management module is configurable to disable the two MOSFETs via the single gate to preserve energy in a source power rail that couples the switch to the non-volatile memory.

6. The memory device of claim 1 , wherein:

the switch comprises a first MOSFET controlled by a first gate, and a second MOSFET controlled by a second gate; and

in response to a reverse voltage condition caused by a voltage drop detected by the switch, the power management module is configurable to disable the second MOSFET via the second gate.

7. A method, comprising:

maintaining a memory device comprising a non-volatile memory and an energy store;

controlling, via a switch coupled to a power line, transmission of power to the non-volatile memory; and

peforming operations by a power management module of the memory device, the operations comprising:

determining whether a voltage drop has occurred, wherein the voltage drop occurs either via a voltage glitch or via an actual loss of power;

turning off the switch, in response to determining that the voltage drop has occurred;

determining that the actual loss of power has occurred, in response to turning off the switch; and

controlling the energy store to supply power to the non-volatile memory, in response to determining that the actual loss of power has occurred.

8. The method of claim 7 , wherein the power management module further performs operations comprising:

maintaining the switch in a state in which the power line is able to supply power to the non-volatile memory, in response to determining that no voltage drop has occurred; and

preserving energy in a source power rail of the switch for a time interval between the determining of the voltage drop and the determining of the actual loss of power.

9. The method of claim 7 , wherein the power management module further performs operations comprising:

maintaining or restoring the switch in a state in which the power line is able to supply power to the non-volatile memory, in response to determining that no actual loss of power has occurred.

10. The method of claim 7 , wherein the memory device is a memory board or a storage drive, wherein the non-volatile memory comprises a plurality of non-volatile memory chips, and wherein the energy store is a capacitor that is configurable to store charge.

11. The method of claim 7 , wherein the switch comprises two MOSFETs that share a single gate that is controlled by the power management module, and wherein in response to a reverse voltage condition caused by a voltage drop detected by the switch, the power management module disables the two MOSFETs via the single gate to preserve energy in a source power rail that couples the switch to the non-volatile memory.

12. The method of claim 7 , wherein:

the switch comprises a first MOSFET controlled by a first gate, and a second MOSFET controlled by a second gate; and

in response to a reverse voltage condition caused by a voltage drop detected by the switch, the power management module disables the second MOSFET via the second gate, wherein the first MOSFET continues to facilitate charge retention in a source power rail even when the second MOSFET is disabled.

13. A computational device, comprising:

a processor; and

a memory device coupled to the processor, the memory device comprising:

a non-volatile memory;

an energy store coupled to an input power module of the non-volatile memory;

a switch coupled to a power line to control transmission of power to the non-volatile memory; and

a power management module configurable to:

determine whether a voltage drop has occurred, wherein the voltage drop occurs either via a voltage glitch or via an actual loss of power;

turn off the switch, in response to determining that the voltage drop has occurred;

determine that the actual loss of power has occurred, in response to turning off the switch; and

control the energy store to supply power to the non-volatile memory, in response to determining that the actual loss of power has occurred.

14. The computational device of claim 13 , wherein the power management module is further configurable to:

maintain the switch in a state in which the power line is able to supply power to the non-volatile memory, in response to determining that no voltage drop has occurred; and

preserve energy in a source power rail of the switch for a time interval between the determining of the voltage drop and the determining of the actual loss of power.

15. The computational device of claim 13 , wherein the power management module is further configurable to:

maintain or restore the switch in a state in which the power line is able to supply power to the non-volatile memory, in response to determining that no actual loss of power has occurred.

16. The computational device of claim 13 , wherein the memory device is a memory board or a storage drive, wherein the non-volatile memory comprises a plurality of non-volatile memory chips, and wherein the energy store is a capacitor that is configurable to store charge.

17. The computational device of claim 13 , wherein the switch comprises two MOSFETs with a single gate that is controlled by the power management module, wherein

in response to a reverse voltage condition caused by a voltage drop detected by the switch, the power management module is configurable to disable the two MOSFETs via the single gate to preserve energy in a source power rail that couples the switch to the non-volatile memory.

18. The computational device of claim 13 , wherein:

the switch comprises a first MOSFET controlled by a first gate, and a second MOSFET controlled by a second gate; and

in response to a reverse voltage condition caused by a voltage drop detected by the switch, the power management module is configurable to disable the second MOSFET via the second gate, wherein the first MOSFET is configurable to continue to facilitate charge retention in a source power rail even when the second MOSFET is disabled.

19. The computational device of claim 13 , comprising one or more of:

a display coupled to the memory device;

a network interface communicatively coupled to the processor; or

a battery communicatively coupled to the processor.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2023
From: INTEL CORPORATION
To: SK HYNIX NAND PRODUCT SOLUTIONS CORP.
Reel/Frame 062702/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 7, 2016
From: MORNING-SMITH, ANDREW; MOCANU, ADRIAN; ZUPANC, ZELJKO; NGO, MIKE M.
To: INTEL CORPORATION
Reel/Frame 038223/0828 →