Electronic component of integrated circuitry and a method of forming a conductive via to a region of semiconductor material
An electronic component of integrated circuitry comprises a substrate comprising at least two terminals. Material of one of the terminals has an upper surface. A conductive via extends elevationally into the material of the one terminal. The conductive via extends laterally into the material of the one terminal under the upper surface of the one terminal. Material of the one terminal is above at least some of the laterally extending conductive via. Other embodiments, including method embodiments, are disclosed.
1. A method of forming a conductive via to a region of semiconductor material, comprising:
forming insulator material over a region of semiconductor material;
forming an opening through the insulator material to the region of semiconductor material;
etching semiconductor material of the region through the opening in the insulator material selectively relative to the insulator material and forming an opening in the region of semiconductor material that extends elevationally into the region and laterally under the insulator material; and
filling the opening in the region and the opening in the insulator material with conductive material to form a conductive via having one lateral portion having one elevationally outermost surface and another lateral portion having another elevationally outermost surface, the another lateral portion being laterally outward further from a lateral center of the conductive via than is the one lateral portion, the one elevationally outermost surface being directly against an underside surface of the insulator material, the another elevationally outermost surface not being directly against any underside surface of the insulator material.
2. The method of claim 1 wherein the etching comprises dry anisotropic etching elevationally into semiconductor material of the region followed by isotropic etching into semiconductor material of the region.
3. The method of claim 1 wherein the region of semiconductor material has a maximum horizontal width in a vertical cross-section adjacent a bottom of the opening in the region of semiconductor material, the opening in the vertical cross-section being etched to provide a maximum lateral extent of the opening in the region of semiconductor material in the vertical cross-section to be at least 30% of said maximum horizontal width.
4. The method of claim 3 wherein said maximum lateral extent is at least 50% of said maximum horizontal width.
5. The method of claim 4 wherein said maximum lateral extent is less than 100% of said maximum horizontal width, the opening in the vertical cross-section being etched to form a laterally innermost surface in the semiconductor material that is concavely curved.
6. The method of claim 1 wherein the insulator material is formed directly against the semiconductor material of the region of semiconductor material.
7. The method of claim 1 wherein the region of semiconductor material is conductively doped.
8. The method of claim 1 wherein the region of semiconductor material is a source/drain region of a field effect transistor.
9. A method of forming a conductive via to a source/drain region of a field effect transistor, comprising:
forming insulator material over a source/drain region of a field effect transistor;
forming an opening through the insulator material to the source/drain region;
etching material of the source/drain region through the opening in the insulator material selectively relative to the insulator material and forming an opening in the source/drain region that extends elevationally into the source/drain region and laterally under the insulator material; and
filling the opening in the source/drain region and the opening in the insulator material with conductive material.
10. The method of claim 9 wherein the field effect transistor is a recessed access device.
11. A method of forming a conductive via to a region of semiconductor material, comprising:
forming insulator material over a region of semiconductor material;
forming an opening through the insulator material to the region of semiconductor material;
etching semiconductor material of the region through the opening in the insulator material selectively relative to the insulator material and forming an opening in the region of semiconductor material that extends elevationally into the region and laterally under the insulator material; and
filling the opening in the region and the opening in the insulator material with conductive material to form a conductive via, the region of semiconductor material having a laterally outermost edge in a vertical cross-section, the conductive via extending laterally outward beyond the laterally outermost edge of the region of semiconductor material in the vertical cross-section.
12. A method of forming a recessed access device, comprising:
forming a trench in semiconductor material;
forming a gate insulator along sidewalls and a base of the trench;
forming a conductive gate in the trench, the gate insulator being between the conductive gate and the semiconductor material;
forming a pair of source/drain regions in elevationally outer portions of the semiconductor material on opposing sides of the trench, insulator material being above and directly against an upper surface of one of the pair of source/drain regions; and
forming a conductive via that extends elevationally through the insulator material elevationally into the one source/drain region, the one source/drain region having a maximum horizontal width in a vertical cross-section adjacent a bottom of the conductive via, the one source/drain region having a laterally outermost edge in the vertical cross-section, the conductive via extending laterally outward beyond the laterally outermost edge of the one source/drain region in the vertical cross-section, the conductive via extending laterally into the one source/drain region under the insulator material, material of the one source/drain region being above the laterally extending conductive via, the conductive via in the vertical cross-section having a maximum lateral extent in the one source/drain region that is at least 30% of said maximum horizontal width.