IP Library Granted Patent US 9,859,098
Granted Patent B2
US 9,859,098 · App. 14/977,720 · Granted Jan 2, 2018

Temperature controlled ion source

Inventors: Scott C. Holden (Melrose, MA); Bon-Woong Koo (Andover, MA); Brant S. Binns (Beverly, MA); Richard M. White (Newmarket, NH); Kenneth L. Starks (Gloucester, MA); Eric R. Cobb (Danvers, MA)
Assignee: Varian Semiconductor Equipment Associates, Inc.
H01J37/3002H01J37/08H01J37/3171H01J2237/002
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Quick Facts
Patent No.
US 9,859,098
App. No.
14/977,720
Granted
Jan 2, 2018
Kind
B2
Abstract

An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.

Claims (27)

1. An apparatus for generating an ion beam, comprising:

an ion source comprising a plurality of chamber walls, wherein an outward protrusion extends outward from one of the plurality of chamber walls, and

a heat sink, having a recessed cavity, wherein the outward protrusion is disposed in the recessed cavity;

wherein, at room temperature, there is an initial gap between the outward protrusion and the recessed cavity, such that the ion source and heat sink are not in contact, and wherein at a higher temperature of the ion source, there is high pressure thermal contact between the outward protrusion and the recessed cavity.

2. The apparatus of claim 1 , wherein a final temperature of the ion source is determined based on a temperature of the heat sink and a width of the initial gap.

3. The apparatus of claim 2 , wherein the heat sink comprises channels, and the temperature of the heat sink is determined based on a temperature of coolant fluid flowing through the channels.

4. The apparatus of claim 2 , wherein the heat sink comprises channels, and the temperature of the heat sink is determined based on a flow rate of coolant fluid flowing through the channels.

5. The apparatus of claim 1 , wherein the outward protrusion and the recessed cavity are complementary shapes.

6. The apparatus of claim 5 , wherein the outward protrusion comprises a cylinder.

7. The apparatus of claim 5 , wherein the outward protrusion comprises a tapered cylinder.

8. The apparatus of claim 1 , wherein the ion source comprises an extraction aperture on a first chamber wall, and the outward protrusion is disposed on a second chamber wall opposite the first chamber wall.

9. An apparatus for generating an ion beam, comprising:

an ion source comprising a plurality of chamber walls and an extraction aperture, and

a heat sink;

wherein thermal expansion of the ion source causes high pressure thermal contact of the ion source with the heat sink, so as to regulate a temperature of the ion source and wherein a portion of the ion source extends into a recessed cavity in the heat sink, and thermal expansion causes the portion to contact sides of the recessed cavity.

10. The apparatus of claim 9 , further comprising a second heat sink having a second recessed cavity, having a different dimension than the recessed cavity of the heat sink, wherein the ion source attains a different final temperature when used in conjunction with the second heat sink, for a given temperature of the heat sinks.

11. An apparatus for generating an ion beam, comprising:

an ion source comprising a plurality of chamber walls, wherein a tapered outward protrusion extends outward from one of the plurality of chamber walls, and

a heat sink, having a recessed cavity, wherein the tapered outward protrusion is disposed in the recessed cavity;

wherein, at room temperature, there is an initial gap between the tapered outward protrusion and the recessed cavity and

wherein a final temperature of the ion source is determined based on a temperature of the heat sink and a width of the initial gap.

12. The apparatus of claim 11 , wherein the tapered outward protrusion and the recessed cavity are complementary shapes.

13. The apparatus of claim 11 , wherein the heat sink comprises channels, and the temperature of the heat sink is determined based on a temperature of coolant fluid flowing through the channels.

14. The apparatus of claim 11 , wherein the heat sink comprises channels, and the temperature of the heat sink is determined based on a flow rate of coolant fluid flowing through the channels.

15. The apparatus of claim 11 , further comprising a set of shims disposed between the one of the plurality of chamber walls and the heat sink so as to set the initial gap between the tapered outward protrusion and the recessed cavity.

16. The apparatus of claim 15 , wherein the final temperature of the heat sink is determined based on a thickness of the set of shims.

17. The apparatus of claim 11 , wherein at the final temperature, there is high pressure thermal contact between the tapered outward protrusion and the heat sink.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2016
From: HOLDEN, SCOTT C.; KOO, BON-WOONG; BINNS, BRANT S.; WHITE, RICHARD M.; STARKS, KENNETH L.; COBB, ERIC R.
To: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
Reel/Frame 037521/0932 →
Continuity (1)
Related Publication 20170178857A1 · Jun 22, 2017