Method for fabricating semiconductor device with fin-shaped structure
View Patent ↗A method for fabricating semiconductor device with fin-shaped structure is disclosed. The method includes the steps of: forming a fin-shaped structure on a substrate; forming a first dielectric layer on the substrate and the fin-shaped structure; depositing a second dielectric layer on the first dielectric layer; etching back a portion of the second dielectric layer; removing part of the first dielectric layer to expose a top surface and part of the sidewall of the fin-shaped structure; forming an epitaxial layer to cover the exposed top surface and part of the sidewall of the fin-shaped structure; and removing a portion of the second dielectric layer.
1. A method for fabricating semiconductor device with fin-shaped structure, comprising:
forming a fin-shaped structure on a substrate;
forming a first dielectric layer on the substrate and the fin-shaped structure;
depositing a second dielectric layer on the first dielectric layer;
etching back a portion of the second dielectric layer;
removing part of the first dielectric layer to expose a top surface and part of the sidewall of the fin-shaped structure;
forming an epitaxial layer to cover the exposed top surface and part of the sidewall of the fin-shaped structure;
planarizing the epitaxial layer before removing a portion of the second dielectric layer; and
removing a portion of the second dielectric layer.
2. The method of claim 1 , further comprising performing an atomic layer deposition (ALD) process for forming the first dielectric layer.
3. The method of claim 1 , further comprising etching back a portion of the second dielectric layer so that a top surface of the second dielectric layer is even with a top surface of first dielectric layer.
4. The method of claim 1 , wherein the first dielectric layer comprises an oxide layer.
5. The method of claim 1 , wherein the second dielectric layer comprises an Advanced Patterning Film (APF).
6. The method of claim 1 , wherein the epitaxial layer comprises a silicon germanium layer.
7. The method of claim 1 , wherein the fin-shaped structure comprises silicon germanium.
8. The method of claim 1 , wherein the fin-shaped structure and the epitaxial layer comprises a linear gradient of germanium concentration therebetween.
9. The method of claim 1 , wherein a concentration of germanium increases linearly from the fin-shaped structure toward the epitaxial layer.
10. The method of claim 1 , wherein a concentration of germanium increases linearly from the epitaxial layer toward the fin-shaped structure.