Wafer level photonic devices dies structure and method of making the same

1. A light-emitting device, comprising:

a first epi-structure having a top surface and a bottom surface opposite to the top surface and comprising:

a first doped semiconductor layer;

a second doped semiconductor layer closer to the bottom surface than the first doped semiconductor layer; and

a light-emitting layer disposed between the first and second doped semiconductor layers;

a first metal element disposed on the bottom surface, and electrically connected to the second doped semiconductor layer;

a second metal element disposed on the bottom surface;

a first through-via extending through the first doped semiconductor layer and the second doped semiconductor layer and electrically connected to the first doped semiconductor layer and the second metal element;

a conductive element disposed on the top surface in a configuration to expose a portion of the top surface, and electrically connected to the first through-via; and

a phosphor layer disposed on the top surface and covering the conductive element.

2. The light-emitting device of claim 1 , wherein the conductive element comprises a plurality of conductive lines.

3. The light-emitting device of claim 1 , wherein the conductive element comprises a transparent conductive material.

4. The light-emitting device of claim 1 , wherein the first doped conductive layer comprises a roughened surface.

5. The light-emitting device of claim 1 , wherein the second metal element is directly arranged under the first through-via.

6. The light-emitting device of claim 1 , wherein the first epi-structure and the phosphor layer are directly connected with each other.

7. The light-emitting device of claim 1 , wherein first epi-structure further comprises a side surface between the top surface and the bottom surface and devoid of the phosphor layer.

8. The light-emitting device of claim 1 , further comprising a reflector disposed between the second doped semiconductor layer and the first metal element.

9. The light-emitting device of claim 1 , further comprising a substrate, the substrate having an upper surface facing to the bottom surface, a first conductive pad, and a second conductive pad, wherein the first conductive pad and the second conductive pad are disposed on the upper surface.

10. The light-emitting device of claim 9 , wherein the first conductive pad is electrically connected to the first metal element.

11. The light-emitting device of claim 9 , wherein the first epi-structure and the substrate are directly connected with each other.

12. The light-emitting device of claim 9 , wherein the substrate comprises a material of silicon.

13. The light-emitting device of claim 1 , further comprising a second epi-structure electrically connected to the first epi-structure.

14. The light-emitting device of claim 13 , further comprising a trench separating the first epi-structure and the second epi-structure.

15. The light-emitting device of claim 13 , wherein the second epi-structure comprises a third doped semiconductor layer, and a fourth doped semiconductor layer having a different type of conductivity from the third doped semiconductor layer.

16. The light-emitting device of claim 15 , wherein the second epi-structure further comprises a third metal element electrically connected to the third doped semiconductor layer.

17. The light-emitting device of claim 15 , wherein the first doped semiconductor layer and the third doped semiconductor layer have the same type of conductivity.

18. The light-emitting device of claim 15 , further comprising a second through-via extending through the third doped semiconductor layer and the fourth doped semiconductor layer.

19. The light-emitting device of claim 18 , wherein the second through-via is electrically connected to the third doped semiconductor layer and the third metal element.