Handler bonding and debonding for semiconductor dies
Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.
1. A method for processing semiconductor devices, the method comprising:
applying a release layer to a transparent handler;
bonding at least one singulated semiconductor device to the transparent handler without applying a separate adhesive layer between the singulated semiconductor device and the transparent handler;
packaging the at least one singulated semiconductor device while it is bonded to the transparent handler;
ablating the release layer by irradiating the release layer through the transparent handler with a laser; and
removing the at least one singulated semiconductor device from the transparent handler after the release layer has been ablated.
2. The method of claim 1 , wherein the transparent handler is one of:
a handle wafer;
a panel; and
a roll of handler material.
3. The method of claim 1 , further comprising:
forming a dielectric layer on the release layer prior to bonding the at least one singulated semiconductor device, wherein the dielectric layer is situated between the release layer and the at least one singulated semiconductor device.
4. The method of claim 1 , wherein the release layer absorbs a frequency of light radiated from the laser.
5. The method of claim 1 , wherein light radiated from the laser has a wavelength of approximately 250 nm to 5000 nm.
6. The method of claim 1 , wherein the laser used for ablating the release layer is one of a YAG laser, a XeF excimer laser, and a diode-pumped solid-state (DPSS) laser.
7. The method of claim 1 , wherein light radiated from the laser is ultraviolet light.
8. The method of claim 1 , wherein light radiated from the laser is infrared light.
9. The method of claim 1 , wherein the release layer is a single layer of material.
10. The method of claim 1 , wherein the release layer comprises one or more additive materials, wherein the additive materials adjust a frequency of light absorption property of the release layer.
11. The method of claim 1 , wherein the release layer is substantially transparent to visible light.
12. A computer program product for controlling processing of semiconductor devices, the computer program product comprising:
A non-transitory storage medium readable by at least one processing circuit and storing instructions for execution by the at least one processing circuit for performing a method comprising:
applying a release layer to a transparent handler;
applying a distinct insulating layer to the release layer if a distinct adhesive layer has not been applied to the release layer at least one singulated semiconductor device, otherwise applying the insulating layer to the distinct adhesive layer;
bonding the at least one singulated semiconductor device to the transparent handler, wherein the singulated semiconductor device is disposed directly on the insulating layer;
packaging the at least one singulated semiconductor device while it is bonded to the transparent handler;
ablating the release layer by irradiating the release layer through the transparent handler with a laser; and
removing the at least one singulated semiconductor device from the transparent handler after the release layer has been ablated.
13. The computer program product of claim 12 , wherein the method further comprises:
applying an adhesive layer, that is distinct from the release layer, between the at least one singulated semiconductor device and the release layer.
14. The computer program product of claim 12 , wherein the release layer comprises one or more additive materials, wherein the additive materials adjust a frequency of light absorption property of the release layer.