Semiconductor structure with inhomogeneous regions
A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.
1. A semiconductor heterostructure, comprising:
an active region;
a metallic contact;
a group III nitride semiconductor layer located between the active region and the metallic contact, the semiconductor layer including a plurality of inhomogeneous regions arranged within multiple levels of the semiconductor layer along a height direction of the semiconductor layer, wherein some of the inhomogeneous regions in a first level of the semiconductor layer are vertically offset from inhomogeneous regions in a second level of the semiconductor layer, and wherein the plurality of inhomogeneous regions include one or more of a set of transparent regions, a set of reflective regions and/or a set of conductive regions, each of the inhomogeneous regions having a set of attributes differing from a group III nitride material forming the semiconductor layer.
2. The semiconductor heterostructure of claim 1 , wherein each of the inhomogeneous regions in the first level and the second level of the semiconductor layer includes a set of reflective regions.
3. The semiconductor heterostructure of claim 1 , wherein each of the plurality of inhomogeneous regions in the first level of the semiconductor layer extend into the metallic contact and each of the plurality of inhomogeneous regions in the second level of the semiconductor layer are located at an interface of the semiconductor layer.
4. The semiconductor heterostructure of claim 1 , wherein all of the inhomogeneous regions in the first level of the semiconductor layer are staggered with the inhomogeneous regions in the second level of the semiconductor layer to form a checkerboard arrangement of the inhomogeneous regions within the semiconductor layer.
5. The semiconductor heterostructure of claim 1 , wherein the inhomogeneous regions in the first level of the semiconductor layer each has a surface contacting the metallic contact, wherein at least one metal protrusion from the metallic contact extends into each inhomogeneous region.
6. The semiconductor heterostructure of claim 5 , wherein each of the inhomogeneous regions in the first level of the semiconductor layer comprises a set of conductive regions and each of the inhomogeneous regions in the second level of the semiconductor layer comprises a set of reflective regions.
7. The semiconductor heterostructure of claim 6 , wherein each of the inhomogeneous regions in the second level of the semiconductor layer has at least one metal protrusion extending from the metallic contact into the semiconductor layer that is directed to a surface of the inhomogeneous region without contact thereof.
8. A method, comprising:
fabricating a semiconductor heterostructure, wherein the semiconductor heterostructure comprises:
an active region;
a metallic contact;
a single group III nitride semiconductor layer located between the active region and the metallic contact, the semiconductor layer including a plurality of inhomogeneous regions arranged within multiple levels of the semiconductor layer along a height direction of the semiconductor layer, wherein some of the inhomogeneous regions in a first level of the semiconductor layer are vertically offset from inhomogeneous regions in a second level of the semiconductor layer, and wherein the plurality of inhomogeneous regions include one or more of a set of transparent regions, a set of reflective regions and/or a set of conductive regions, each of the inhomogeneous regions having a set of attributes differing from a group III nitride material forming the semiconductor layer.
9. The method of claim 8 , wherein the fabricating includes:
epitaxially growing a portion of the group III nitride semiconductor layer;
forming at least one of the sets of inhomogeneous regions on a surface of the portion of the group III nitride semiconductor layer; and
epitaxially over-growing the group III nitride semiconductor layer after the forming.
10. The method of claim 9 , wherein the forming includes:
depositing the at least one of the sets of inhomogeneous regions using one of: thermal evaporation, magnetron sputtering, ion-beam deposition, or laser beam evaporation; and
patterning the at least one of the sets of inhomogeneous regions using photolithography.
11. An optoelectronic device, comprising:
a semiconductor heterostructure having a first side and a second side, the semiconductor heterostructure including:
a group III nitride semiconductor layer including a plurality of inhomogeneous regions, each inhomogeneous region having a set of attributes differing from a group III nitride material forming the semiconductor layer, wherein the plurality of inhomogeneous regions include:
a set of first inhomogeneous regions configured based on radiation having a target wavelength, wherein the set of first inhomogeneous regions are at least one of: transparent to the radiation or reflective of the radiation; and
a set of second inhomogeneous regions having a conductivity at least ten percent higher than a conductivity of the set of first inhomogeneous regions, wherein each of the sets of inhomogeneous regions occupy at least five percent of at least one of: a lateral planar area of the semiconductor layer or a volume of the semiconductor layer, and wherein at least some of the sets of inhomogeneous regions do not fully overlap.
12. The optoelectronic device of claim 11 , further comprising a first metallic contact having a plurality of connected metallic domains formed on the first side of the semiconductor heterostructure.
13. The optoelectronic device of claim 11 , further comprising a plurality of roughness elements formed on the first side of the semiconductor heterostructure.
14. The optoelectronic device of claim 11 , further comprising a plurality of metallic contact domains formed on the second side of the semiconductor heterostructure.
15. The optoelectronic device of claim 11 , further comprising a plurality of reflective elements incorporated within the semiconductor heterostructure proximate a surface of the second side of the semiconductor heterostructure.
16. The optoelectronic device of claim 15 , wherein the plurality of reflective elements comprise one of dielectrics, metallic reflective islands, Bragg mirrors and combinations thereof.
17. The optoelectronic device of claim 15 , wherein the plurality of reflective elements comprise alternating layers of one of Hf 2 O 3 and Al 2 O 3 , H 2 O 3 and SiO 2 , and Al 2 O 3 and SiO 2 .
18. The optoelectronic device of claim 11 , further comprising a plurality of Bragg domains formed on the second side of the semiconductor heterostructure.
19. The optoelectronic device of claim 11 , further comprising a second metallic contact having metallic domains formed on the second side of the semiconductor heterostructure, each of the metallic domains separated from an adjacent metallic domain by a predetermined spacing.
20. The optoelectronic device of claim 11 , further comprising a passivation layer formed on the second side of the semiconductor heterostructure and a plurality of disjoint domains interspersed within the passivation layer.