IP Library › Granted Patent US 9,716,048
Granted Patent B2
US 9,716,048 · App. 14/985,379 · Granted Jul 25, 2017

Semiconductor device having a peripheral-region defect detection structure

Inventors: Sundae Kim (Hwaseong-si, KR); Yun-Rae Cho (Suwon-si, KR); Namgyu Baek (Suwon-si, KR); Seokhyun Lee (Hwaseong-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L22/34
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Quick Facts
Patent No.
US 9,716,048
App. No.
14/985,379
Granted
Jul 25, 2017
Kind
B2
Abstract

Provided is a semiconductor device including an interconnection structure provided on a cell region of a substrate to include a first line and a second line sequentially stacked on the substrate, and a defect detection structure provided on a peripheral region of the substrate to include first and second defect detection lines provided at the same levels as those of the first and second lines, respectively.

Claims (23)

1. A semiconductor device, comprising:

a substrate including a cell region and a peripheral region;

an interconnection structure on the cell region to include a first line and a second line sequentially stacked on the substrate; and

a defect detection structure on the peripheral region to include a first defect detection line and a second defect detection line provided at the same levels as those of the first and second lines, respectively,

wherein the defect detection structure substantially encloses the interconnection structure in plan view.

2. The device of claim 1 , wherein the interconnection structure further comprises a first contact plug on the cell region to electrically connect the first and second lines to each other.

3. The device of claim 2 , wherein the defect detection structure further comprises a second contact plug provided at the same level as that of the first contact plug, on the peripheral region, to electrically connect the first and second defect detection lines to each other.

4. The device of claim 1 , wherein the interconnection structure further comprises a third line on the cell region and between the first and second lines.

5. The device of claim 4 , wherein the interconnection structure further comprises a first contact plug electrically connecting the first and third lines to each other and a second contact plug electrically connecting the second and third lines to each other, and

the defect detection structure further comprises a third contact plug electrically connecting the first and second defect detection lines to each other.

6. The device of claim 4 , wherein the defect detection structure further comprises a third defect detection line provided on the peripheral region and positioned at substantially the same level as that of the third line.

7. The device of claim 6 , wherein the interconnection structure further comprises a first contact plug electrically connecting the first and third lines to each other and a second contact plug electrically connecting the second and third lines to each other, and

the defect detection structure further comprises a third contact plug electrically connecting the first and third defect detection lines to each other and a fourth contact plug electrically connecting the second and third defect detection lines to each other.

8. The device of claim 1 , wherein, when viewed in plan view, the second defect detection line is shaped like an open rectangular ring having end portions separated from each other, and the defect detection structure further comprises detection pads electrically connected to the end portions of the second defect detection line.

9. The device of claim 8 , wherein the first defect detection line has a shape corresponding to that of the second defect detection line.

10. The device of claim 8 , wherein the first defect detection line comprises first patterns horizontally separated from each other.

11. The device of claim 10 , wherein the defect detection structure further comprises a third defect detection line between the first and second defect detection lines, and

the third defect detection line comprises second patterns which are horizontally separated from each other and are disposed to cross the first patterns.

12. The device of claim 11 , wherein the defect detection structure further comprises two first contact plugs, which are connected in common to a corresponding one of the first patterns but are respectively connected to different ones of the second patterns.

13. The device of claim 11 , wherein the defect detection structure further comprises a plurality of second contact plugs, each electrically connecting a corresponding one of the second patterns to the second defect detection line.

14. The device of claim 1 , wherein, when viewed in plan view, the second defect detection line comprises patterns horizontally separated from each other to enclose the interconnection structure, and

the defect detection structure further comprises detection pads electrically connected to end portions of each of the patterns.

15. The device of claim 1 , wherein the first and second lines, the first and second defect detection lines, and the first and second contact plugs comprises at least one of polysilicon, tungsten, and copper.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 27, 2016
From: KIM, SUNDAE; CHO, YUN-RAE; BAEK, NAMGYU; LEE, SEOKHYUN
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 040152/0520 →
Priority Claims (1)
KR 10-2015-0018745 · Feb 6, 2015 · national
Continuity (1)
Related Publication 20160233171A1 · Aug 11, 2016