Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory can include a memory stack. Such a memory stack can include memory cells and a dielectric between adjacent memory cells, each memory cell including a control gate and a charge storage structure. The memory cell can further include a barrier material between the charge storage structure and the control gate, the charge storage structure and the barrier material having a substantially equal dimension.
1. A vertical memory comprising:
a stack of memory cells, each cell of the stack extending between two respective vertically spaced dielectric tiers, each cell comprising:
a control gate having a vertical surface;
a charge storage structure having a vertical surface facing the vertical surface of the control gate;
a barrier film between the charge storage structure and the control gate, the barrier film having a first vertical surface facing the vertical surface of the control gate and a second vertical surface opposite the first vertical surface and facing the vertical surface of the charge storage structure, wherein the barrier film is situated entirely within a horizontal dimension between the vertical surface of the control gate and the vertical surface of the charge storage structure;
a first dielectric extending between the first vertical surface of the barrier film and the charge storage structure; and
a second dielectric extending between the first vertical surface of the barrier film and the control gate, wherein at least one of the first dielectric and the second dielectric further extends between the charge storage structure and the two respective vertically spaced dielectric tiers, and wherein at least one of the first dielectric and the second dielectric further extends between the barrier film and the two respective vertically spaced dielectric tiers.
2. The memory of claim 1 , wherein each part of the second vertical surface of the barrier film is separated from the vertical surface of the charge storage structure by a substantially equal distance.
3. The memory of claim 1 , wherein a vertical dimension of the charge storage structure is substantially greater than or equal to a vertical dimension of the second vertical surface.
4. The memory of claim 3 , wherein the dimension of the charge storage structure substantially equal to or greater than the second vertical surface comprises the dimension of the charge storage structure being substantially equal to the dimension of the barrier film.
5. The memory of claim 1 , further comprising a pillar adjacent to the charge storage structure and wherein a third dielectric is between the pillar and the charge storage structure.
6. The memory of claim 5 , wherein the pillar comprises polysilicon, the charge storage structure comprises polysilicon, the first dielectric comprises oxide, and the barrier film comprises nitride.
7. The memory of claim 1 , wherein the stack of memory cells comprises a NAND string of memory cells.
8. The memory of claim 1 , wherein the charge storage structure and the barrier film are formed in a control gate recess.
9. A vertical stack of memory cells comprising a vertical pillar, wherein each cell of the stack extending between two respective vertically spaced dielectric tiers and each cell comprises:
a charge storage structure adjacent to the pillar along a dimension, the charge storage structure having a vertical surface;
a first dielectric between the charge storage structure and the pillar;
a barrier film adjacent to the charge storage structure along the dimension, the barrier film including a first vertical surface facing the vertical surface of the charge storage structure, the barrier film including a second vertical surface opposite the first vertical surface;
a control gate adjacent to the dielectric and barrier film along the dimension, the control gate including a vertical surface facing the second vertical surface, wherein the barrier film is situated entirely within a horizontal dimension between the vertical surface of the control gate and the vertical surface of the charge storage structure;
a second dielectric extending between the barrier film and the charge storage structure at the first vertical surface of the barrier film; and
a third dielectric extending between the barrier film and the control gate at the second vertical surface, wherein at least one of the second dielectric and the third dielectric further extends between the charge storage structure and the two respective vertically spaced dielectric tiers, and wherein at least one of the second dielectric and the third dielectric further extends between the barrier film the two respective vertically spaced dielectric tiers.
10. The stack of claim 9 , wherein the charge storage structure is substantially rectangular in a vertical cross-section.
11. The stack of claim 9 , wherein the control gate comprises doped polysilicon.
12. The stack of claim 9 , wherein the pillar comprises polysilicon, the charge storage structure comprises polysilicon, the second dielectric comprises oxide, and the barrier film comprises nitride.
13. The stack of claim 9 , wherein the stack comprises a NAND string of memory cells.
14. The stack of claim 9 , wherein the first and the second dielectric are contiguous and jointly surround the charge storage structure and the barrier film.
15. The stack of claim 9 , wherein the charge storage structure and the barrier film are formed in a control gate recess.
16. A method of forming a memory structure, comprising:
forming a control gate tier including material of a control gate, the control gate tier extending between adjacent dielectric tiers;
forming a vertical opening extending through the control gate tier;
forming a control gate recess in the control gate tier, the control gate recess extending to define a vertical surface of the control gate;
forming a first dielectric adjacent the vertical surface of the control gate;
forming a barrier material in the control gate recess adjacent the first dielectric;
forming a second dielectric adjacent an opposite side of the barrier material from the first dielectric;
forming a charge storage structure adjacent the second dielectric, the charge storage structure having a first vertical surface facing the vertical surface of the control gate, wherein the barrier material is located entirely within the horizontal distance between the first vertical surface of the charge storage structure and the vertical surface of the control gate, wherein the second dielectric extends above and below the charge storage structure, and wherein at least one of the first dielectric and the second dielectric further extends between the barrier material and each of the adjacent dielectric tiers.
17. The method of claim 16 , further comprising forming a third dielectric adjacent the charge storage structure.
18. The method of claim 16 , wherein the height of the charge storage structure is greater than or equal to the height of the barrier material.
19. A method of forming a memory stack, the method comprising:
forming multiple alternating control gate tiers and dielectric tiers;
forming a respective control gate recess in each control gate tier;
forming a respective control gate in each control gate recess forming a respective first dielectric on each control gate in the control gate recesses;
forming respective barrier material adjacent each first dielectric in the control gate recesses;
removing portions of the barrier material to form barrier films adjacent each first dielectric in each control gate recess;
forming a respective second dielectric adjacent the barrier films, wherein the first and second dielectrics in each control gate recess jointly surround the respective barrier film in such recesses;
forming charge storage structure material adjacent the second dielectric; and
removing portions of the charge storage structure material to form charge storage structures extending in each control gate recess, wherein the height of each charge storage structure is equal to or greater than the height of the barrier film in such control gate recess.
20. The method of claim 19 , further comprising:
before removing the portions of the barrier material, forming sacrificial material on the barrier material and removing portions of the sacrificial material; and
before forming the second dielectric, removing the remaining sacrificial material.
21. The method of claim 19 , wherein removing portions of the barrier material to form the barrier films includes removing the portions of the barrier material to form each of the barrier films to have a dimension that is substantially equal to a corresponding dimension of a respective one of the control gates.